EP4362071A3 - Boîtier de semi-conducteur de niveau panneau et son procédé de fabrication - Google Patents

Boîtier de semi-conducteur de niveau panneau et son procédé de fabrication Download PDF

Info

Publication number
EP4362071A3
EP4362071A3 EP23206096.2A EP23206096A EP4362071A3 EP 4362071 A3 EP4362071 A3 EP 4362071A3 EP 23206096 A EP23206096 A EP 23206096A EP 4362071 A3 EP4362071 A3 EP 4362071A3
Authority
EP
European Patent Office
Prior art keywords
sidewall
semiconductor package
manufacturing
insulating layer
adhesive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP23206096.2A
Other languages
German (de)
English (en)
Other versions
EP4362071A2 (fr
Inventor
David Gani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Asia Pacific Pte Ltd
STMicroelectronics Pte Ltd
Original Assignee
STMicroelectronics Asia Pacific Pte Ltd
STMicroelectronics Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Asia Pacific Pte Ltd, STMicroelectronics Pte Ltd filed Critical STMicroelectronics Asia Pacific Pte Ltd
Publication of EP4362071A2 publication Critical patent/EP4362071A2/fr
Publication of EP4362071A3 publication Critical patent/EP4362071A3/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/014Manufacture or treatment using batch processing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/019Manufacture or treatment using temporary auxiliary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7424Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9413Dispositions of bond pads on encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
EP23206096.2A 2022-10-27 2023-10-26 Boîtier de semi-conducteur de niveau panneau et son procédé de fabrication Withdrawn EP4362071A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202263419799P 2022-10-27 2022-10-27
US18/489,746 US20240145258A1 (en) 2022-10-27 2023-10-18 Panel level semiconductor package and method of manufacturing the same

Publications (2)

Publication Number Publication Date
EP4362071A2 EP4362071A2 (fr) 2024-05-01
EP4362071A3 true EP4362071A3 (fr) 2024-09-25

Family

ID=88558366

Family Applications (1)

Application Number Title Priority Date Filing Date
EP23206096.2A Withdrawn EP4362071A3 (fr) 2022-10-27 2023-10-26 Boîtier de semi-conducteur de niveau panneau et son procédé de fabrication

Country Status (2)

Country Link
US (1) US20240145258A1 (fr)
EP (1) EP4362071A3 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1111662A2 (fr) * 1999-12-22 2001-06-27 General Electric Company Dispositif et méthode pour l'alignement d'une puce semi-conductrice avec le métal d'interconnexion sur un substrat flexible, et produit ainsi obtenu
US20090236736A1 (en) * 2006-08-04 2009-09-24 Micron Technology, Inc. Microelectronic devices and methods for manufacturing microelectronic devices
US20190139925A1 (en) * 2017-11-03 2019-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure and manufacturing method thereof

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950012658B1 (ko) * 1992-07-24 1995-10-19 삼성전자주식회사 반도체 칩 실장방법 및 기판 구조체
US5936847A (en) * 1996-05-02 1999-08-10 Hei, Inc. Low profile electronic circuit modules
US6548764B1 (en) * 2000-06-07 2003-04-15 Micron Technology, Inc. Semiconductor packages and methods for making the same
US6964881B2 (en) * 2002-08-27 2005-11-15 Micron Technology, Inc. Multi-chip wafer level system packages and methods of forming same
JP3534405B1 (ja) * 2002-11-28 2004-06-07 鐘淵化学工業株式会社 耐熱性フレキシブル積層板の製造方法およびこれにより製造される耐熱性フレキシブル積層板
US6841883B1 (en) * 2003-03-31 2005-01-11 Micron Technology, Inc. Multi-dice chip scale semiconductor components and wafer level methods of fabrication
WO2004094499A1 (fr) * 2003-04-18 2004-11-04 Kaneka Corporation Composition de resine thermodurcissable, corps multicouche a base de ladite resine et carte de circuits imprimes
US20050126706A1 (en) * 2003-12-10 2005-06-16 Bunch Richard D. Non-corrosive low temperature liquid resist adhesive
JP4298559B2 (ja) * 2004-03-29 2009-07-22 新光電気工業株式会社 電子部品実装構造及びその製造方法
FI117369B (fi) * 2004-11-26 2006-09-15 Imbera Electronics Oy Menetelmä elektroniikkamoduulin valmistamiseksi
FI122128B (fi) * 2005-06-16 2011-08-31 Imbera Electronics Oy Menetelmä piirilevyrakenteen valmistamiseksi
FI119714B (fi) * 2005-06-16 2009-02-13 Imbera Electronics Oy Piirilevyrakenne ja menetelmä piirilevyrakenteen valmistamiseksi
KR100660893B1 (ko) * 2005-11-22 2006-12-26 삼성전자주식회사 정렬 마크막을 구비하는 반도체 소자 및 그 제조 방법
US9093322B2 (en) * 2007-07-13 2015-07-28 Intel Mobile Communications GmbH Semiconductor device
US7893545B2 (en) * 2007-07-18 2011-02-22 Infineon Technologies Ag Semiconductor device
US7767496B2 (en) * 2007-12-14 2010-08-03 Stats Chippac, Ltd. Semiconductor device and method of forming interconnect structure for encapsulated die having pre-applied protective layer
US9318441B2 (en) * 2007-12-14 2016-04-19 Stats Chippac, Ltd. Semiconductor device and method of forming sacrificial adhesive over contact pads of semiconductor die
AT12316U1 (de) * 2008-10-30 2012-03-15 Austria Tech & System Tech Verfahren zur integration eines elektronischen bauteils in eine leiterplatte
US8535978B2 (en) * 2011-12-30 2013-09-17 Deca Technologies Inc. Die up fully molded fan-out wafer level packaging
US9754835B2 (en) * 2010-02-16 2017-09-05 Deca Technologies Inc. Semiconductor device and method comprising redistribution layers
US8884431B2 (en) * 2011-09-09 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging methods and structures for semiconductor devices
US8941222B2 (en) * 2010-11-11 2015-01-27 Advanced Semiconductor Engineering Inc. Wafer level semiconductor package and manufacturing methods thereof
US8492203B2 (en) * 2011-01-21 2013-07-23 Stats Chippac, Ltd. Semiconductor device and method for forming semiconductor package having build-up interconnect structure over semiconductor die with different CTE insulating layers
US9000584B2 (en) * 2011-12-28 2015-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Packaged semiconductor device with a molding compound and a method of forming the same
US9111949B2 (en) * 2012-04-09 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus of wafer level package for heterogeneous integration technology
US9620413B2 (en) * 2012-10-02 2017-04-11 STATS ChipPAC Pte. Ltd. Semiconductor device and method of using a standardized carrier in semiconductor packaging
US9275925B2 (en) * 2013-03-12 2016-03-01 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for an improved interconnect structure
US8987876B2 (en) * 2013-03-14 2015-03-24 General Electric Company Power overlay structure and method of making same
US9978700B2 (en) * 2014-06-16 2018-05-22 STATS ChipPAC Pte. Ltd. Method for building up a fan-out RDL structure with fine pitch line-width and line-spacing
US10269752B2 (en) * 2014-09-15 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Package with UBM and methods of forming
US10147692B2 (en) * 2014-09-15 2018-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Package with UBM and methods of forming
US9999136B2 (en) * 2014-12-15 2018-06-12 Ge Embedded Electronics Oy Method for fabrication of an electronic module and electronic module
US9439292B1 (en) * 2015-03-06 2016-09-06 Kinsus Interconnect Technology Corp. Method for manufacturing a circuit board with buried element having high density pin count and the circuit board structure
DE102015122282A1 (de) * 2015-12-18 2017-06-22 Infineon Technologies Ag Elektronisches Bauteil und Verfahren zu dessen Herstellung
US9806048B2 (en) * 2016-03-16 2017-10-31 Qualcomm Incorporated Planar fan-out wafer level packaging
US10373931B2 (en) * 2016-11-29 2019-08-06 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package structure and method of manufacturing the same
US11232957B2 (en) * 2017-11-29 2022-01-25 Pep Inovation Pte. Ltd. Chip packaging method and package structure
US12506055B2 (en) * 2017-11-29 2025-12-23 Pep Innovation Pte. Ltd. Chip packaging method and chip structure
US11114315B2 (en) * 2017-11-29 2021-09-07 Pep Innovation Pte. Ltd. Chip packaging method and package structure
US10515936B1 (en) * 2018-06-25 2019-12-24 Powertech Technology Inc. Package structure and manufacturing method thereof
US10867925B2 (en) * 2018-07-19 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming chip package structure
US11031289B2 (en) * 2018-10-31 2021-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and methods of forming the same
KR102617086B1 (ko) * 2018-11-15 2023-12-26 삼성전자주식회사 Ubm을 포함하는 웨이퍼-레벨 반도체 패키지
US11694967B2 (en) * 2019-03-14 2023-07-04 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method of fabricating the same
US11233039B2 (en) * 2019-08-29 2022-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packages
US11609391B2 (en) * 2020-05-19 2023-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and manufacturing method thereof
CN114512457B (zh) * 2020-11-17 2025-10-03 Pep创新私人有限公司 半导体结构及其制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1111662A2 (fr) * 1999-12-22 2001-06-27 General Electric Company Dispositif et méthode pour l'alignement d'une puce semi-conductrice avec le métal d'interconnexion sur un substrat flexible, et produit ainsi obtenu
US20090236736A1 (en) * 2006-08-04 2009-09-24 Micron Technology, Inc. Microelectronic devices and methods for manufacturing microelectronic devices
US20190139925A1 (en) * 2017-11-03 2019-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure and manufacturing method thereof

Also Published As

Publication number Publication date
US20240145258A1 (en) 2024-05-02
EP4362071A2 (fr) 2024-05-01

Similar Documents

Publication Publication Date Title
DE112014001665B4 (de) Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
US8927303B2 (en) Method for manufacturing light-emitting diode
EP1589624A3 (fr) Laser à semi-conducteur et son procédé de fabrication
TWI256719B (en) Semiconductor device package module and manufacturing method thereof
EP1432032A3 (fr) Pile de puces semi-conductrices et procédé pour sa fabrication
TW200629606A (en) III-V group compound semiconductor light emitting device and manufacturing method thereof
EP2015359A3 (fr) Procédé de production d'un boîtier pour semi-conducteur et système de carte de circuits
DE102016102152A1 (de) Form-Halbleitergehäuse mit verbesserten lokalen Hafteigenschaften
US7629204B2 (en) Surface roughening method for embedded semiconductor chip structure
US4056681A (en) Self-aligning package for integrated circuits
US20080003718A1 (en) Singulation Process for Block-Molded Packages
EP4362071A3 (fr) Boîtier de semi-conducteur de niveau panneau et son procédé de fabrication
EP0129915A1 (fr) Procédé de fabrication d'un dispositif à circuit intégré
ITMI20022767A1 (it) Processo per realizzare un dispositivo a semiconduttore
EP4235767A3 (fr) Dispositif semi-conducteur à cavité ouverte et procédé associé
CA2127297A1 (fr) Circuit integre opto-electronique et sa methode de fabrication
US12288830B2 (en) Method for singulating components from a component composite, and component
EP2267800A3 (fr) Puce semi-conductrice pour l'optoélectronique et son procédé de fabrication
JPH0794777A (ja) 発光素子の製造方法
EP3703200A3 (fr) Wafer à laser semi-conducteur et laser semi-conducteur
JPH10209505A (ja) 発光ダイオードおよびその製造方法
KR20050093876A (ko) 발광 소자 및 그의 제조 방법
US10079162B1 (en) Method for making lead frames for integrated circuit packages
US7399996B2 (en) LED package and method for producing the same
WO2023219786A8 (fr) Boîtier comprenant un substrat et une puce d'interconnexion conçue pour une interconnexion à haute densité

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN PUBLISHED

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 23/31 20060101ALN20240618BHEP

Ipc: H01L 21/56 20060101ALN20240618BHEP

Ipc: H01L 23/538 20060101ALI20240618BHEP

Ipc: H01L 21/60 20060101AFI20240618BHEP

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 23/31 20060101ALN20240817BHEP

Ipc: H01L 21/56 20060101ALN20240817BHEP

Ipc: H01L 21/683 20060101ALI20240817BHEP

Ipc: H01L 23/538 20060101ALI20240817BHEP

Ipc: H01L 21/60 20060101AFI20240817BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20250326