Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
  • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
  • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
  • H01S5/021—Silicon based substrates
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/02—Structural details or components not essential to laser action
  • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
  • H01S5/0218—Substrates comprising semiconducting materials from other groups of the Periodic Table than the materials of the active layer
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
  • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
  • H01S5/3416—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers tunneling through barriers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
  • H01S5/3422—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising type-II quantum wells or superlattices
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S5/00—Semiconductor lasers
  • H01S5/30—Structure or shape of the active region; Materials used for the active region
  • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
  • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
  • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
  • H01S2302/00—Amplification / lasing wavelength

Definitions

• the present invention generally relates to light-emitting optoelectronic components based on compound semiconductors on non-native substrates.
• the invention shows a particularly advantageous application for the integration of light-emitting opto-electronic components in or on photonic integrated circuits.
• the integration of semiconductor components on a non-native substrate can be carried out mainly by two methods: either in a so-called heterogeneous manner, that is to say by the bonding of layers or semiconductor components on the non-native substrate, or by so-called monolithic manner, that is to say by epitaxial growth of semiconductor layers directly on the non-native substrate.
• Dislocations are linear defects (that is to say non-punctual), corresponding to a discontinuity in the organization of the crystalline structure. They have an influence in particular on the electronic properties of semiconductor materials.
• quantum well lasers exhibit sensitivity to dislocations and that epitaxial quantum well lasers on substrates non-native therefore experience a degradation of their performance due to the dislocations generated by epitaxial growth.
• Quantum dot lasers described for example in the articles “Photonic Integration With Epitaxial III-V on Silicon” by A. Liu and J. Bowers, or even “Low-Threshold Epitaxially Grown 1.3-pm InAs Quantum Dot Lasers on Patterned (001) Sf' by Shang et al., were fabricated by epitaxial growth on a non-native substrate. These show better performance compared to quantum well lasers made using the same process.
• the performance of quantum dot lasers fabricated on a non-native substrate remains limited by the density of the dislocations. This must remain low, of the order of 10 6 - 10 7 cm -2 , to ensure the proper functioning of these lasers, as described in the articles "Origin ofdefect tolerance in InAs/GaAs quantum dot lasers grown on Si' , by Liu et al., or “Impact of threading dislocation on the lifetime of InAs quantum dot lasers on Si”, by Jung et al.
• the present invention proposes an optoelectronic component insensitive to dislocations, comprising a semiconductor heterostructure with quantum wells capable of emitting laser radiation and formed by epitaxial growth on a non-native substrate.
• the performances of this optoelectronic component are not affected by the dislocations due to manufacturing by epitaxial growth and are similar to those obtained by epitaxial growth on a native substrate.
• the invention goes against the previously mentioned prejudice that light sources, such as lasers, based on semiconductor materials manufactured by epitaxial growth on non-native substrates, have degraded performance. compared to sources made by epitaxial growth on native substrates.
• the invention thus proposes an opto-electronic component comprising:
• a support structure comprising a non-native substrate different from the first semiconductor materials, said semiconductor heterostructure being formed by epitaxial growth on the support structure, characterized in that the active zones have a dislocation density greater than 10 7 .cnr 2 , greater than 3.10 7 .cnr 2 , greater than 5.10 7 .cnr 2 greater than 10 8 .cnr 2 , greater than 10 9 .cnr 2 or greater than 10 1 °.cnr 2 .
• the support structure further comprises on the non-native substrate at least one buffer layer which has a dislocation density greater than 10 7 .cnr 2 , 10 7 .cnr 2 greater than 3.10 7 .cnr 2 , greater than 5.10 7 . cnr 2 , greater than 10 8 .cnr 2 , greater than 10 9 .cnr 2 or greater than 10 10 .cnr 2 .
• the support structure further comprises on the non-native substrate at least one buffer layer which has a thickness less than or equal to 3 micrometers, less than or equal to 2 micrometers or even less than or equal to 1 micrometer.
• the support structure further comprises a first additional transition layer, a first confinement zone and a second additional transition layer,
• the non-native substrate is formed from a group IV material
• the non-native substrate is formed in silicon
• the first semiconductor materials include an antimonide
• the active zones each consist of a hole quantum well inserted between two electron quantum wells, said hole quantum well and the two electron quantum wells forming an assembly located between two barrier layers,
• the active zones each include:
• ternary material based on gallium, indium and antimony whose indium content varies between 0% and 50%, and with a thickness between 1.5 nm and 4.5 nm,
• each electron blocking zone comprises:
• each hole blocking area includes:
• the semiconductor heterostructure has a dislocation density of between 10 6 and 10 9 cnr 2 .
• FIG. 1 is a schematic view of an embodiment of an opto-component electronics according to the invention.
• FIG. 2 is a schematic view of an embodiment of an active zone according to the invention.
• FIG. 3 is a schematic view of a type II quantum well
• FIG. 4 is a schematic view of a type II quantum well with dislocations
• FIG. 5 illustrates the operating principle of a cascade of active zones
• FIG. 6 is a schematic view of an embodiment of a hole blocking zone and of an electron blocking zone according to the invention
• FIG. 7 represents the band diagram of the embodiment of the assembly formed by an active zone, a hole blocking zone and an electron blocking zone of figure 6.
• FIG. 8 represents the evolution as a function of the power supply current per facet of the laser radiation emitted by an opto-electronic component manufactured according to the combination of the embodiments of FIGS. 1, 2 and 6.
• FIG. 9 represents the evolution as a function of the supply current of the spectrum of the laser radiation emitted by an opto-electronic component according to the combination of the embodiments of FIGS. 1, 2 and 6.
• FIG. 10 represents the evolution as a function of the temperature of the spectrum of the laser radiation emitted by an opto-electronic component according to the combination of the embodiments of FIGS. 1, 2 and 6.
• FIG. 11 represents the lifetime measurement of the opto-electronic component according to the combination of the embodiments of FIGS. 1, 2 and 6.
• FIG. 12 represents the evolution of the power per facet of the laser radiation emitted by an opto-electronic component of structure similar to the combination of the embodiments of figures 1, 2 and 6, but manufactured by epitaxial growth on a native substrate.
• FIG. 13 represents the evolution as a function of the temperature of the spectrum of the laser radiation emitted by an opto-electronic component of structure similar to the combination of the embodiments of FIGS. 1, 2 and 6, but manufactured by epitaxial growth on a native substrate .
• FIG. 14 represents the evolution as a function of the supply current of the power per facet of the laser radiation emitted by an opto-electronic component similar to the embodiment of FIG. 1, but manufactured by epitaxial growth on a native substrate.
• FIG. 15 represents the evolution, as a function of the supply current, of the power per facet of the laser radiation emitted by an opto-electronic component similar to the embodiment of FIG. 1.
• FIG. 16 represents the evolution, as a function of the supply current, of the power per facet of the laser radiation emitted by an opto-electronic component similar to the embodiment of FIG. 1, but manufactured by epitaxial growth on a native substrate.
• FIG. 17 represents the evolution, as a function of the supply current, of the power per facet of the laser radiation emitted by an opto-electronic component similar to the embodiment of FIG.
• FIG. 18 is a schematic view of another embodiment of an opto-electronic component according to the invention.
• Figure 1 schematically shows an embodiment of an optoelectronic component according to the invention designated as a whole by the reference 1.
• the optoelectronic component 1 comprises a support structure 30 on which will be formed by epitaxial growth a semiconductor heterostructure 2 capable of emitting laser radiation.
• the support structure 30 comprises at least one substrate, in English “wafer”, non-native 3.
• non-native substrate is meant a substrate formed from a material different from the materials forming the semiconductor heterostructure 2.
• the non-native substrate 3 is an Si(001) silicon substrate, it being understood that the substrate could also be made of germanium, gallium arsenide, gallium phosphide, or indium phosphide.
• the support structure 30 further comprises a stack of several semiconductor layers successively deposited on each other by epitaxial growth on the non-native substrate 3.
• the type of epitaxy can be chosen from molecular beam epitaxy, chemical beam epitaxy, or organometallic vapor phase epitaxy.
• the support structure 30 comprises successively and from the substrate 3; a buffer layer 4, a first additional transition layer 53a, a first confinement zone 51 (in English, “cladding” layer), then a second additional transition layer 53b.
• the role of the buffer layer and the transition layers is to accommodate changes in the minimum energy of the conduction band from one layer to another.
• a layer could be added in the buffer layer 4 to achieve a specific lower contact layer as will be described later.
• the buffer layer 4 is made of gallium antimonide GaSb:Te and has a thickness of between 100 nm and 3 ⁇ m. According to the example illustrated, the buffer layer has a thickness of 1500 nm.
• the first confinement zone 51 is formed by a number number of repetitions of the superposition of a layer of aluminum antimonide AlSb with a thickness between 1 nm and 4 nm and a layer of indium arsenide lnAs:Si with a thickness between 1 nm and 4 nm.
• the aluminum antimonide layer AlSb has a thickness of 2.3 while the indium arsenide layer InAs:Si has a thickness of 2.4 nm and 685 repetitions are produced.
• the first additional transition layer 53a and the second additional transition layer 53b are made of an alloy of aluminum antimonide and indium arsenide AISb/lnAs each having a thickness of between 1.5 nm and 3.5 nm .
• the support structure 30 is manufactured by an epitaxial growth technique chosen from the techniques mentioned above.
• the semiconductor heterostructure 2 capable of emitting laser radiation, is then deposited in successive layers by epitaxial growth on the support structure 30.
• the semiconductor heterostructure 2 is formed from a stack of regions and layers of semiconductor materials .
• the semiconductor heterostructure comprises, from the last layer of the support structure 30 (i.e. the layer farthest from the substrate 3) a region 22 forming a first confinement heterostructure.
• region 22 is made of gallium antimonide GaSb:Te and has a thickness between 100 nm and 1.2 ⁇ m, and for example 400 nm.
• the semiconductor heterostructure 2 successively comprises, from region 22: a first transition layer 21a, a light-emitting region 20 which will be described in more detail later, a second transition layer 21b, a region 23 forming a second confinement heterostructure.
• the first transition layer 21a and the second transition layer 21b are made of an alloy of aluminum antimonide and indium arsenide AISb/lnAs, with respective thicknesses between 0.3nm and 3.5nm.
• Region 23 is, like region 22, in gallium antimonide GaSb:Te, having a thickness of 400 nm.
• Additional layers that complete the optoelectronic component 1 according to the invention are also deposited in successive layers and by epitaxial growth on the semiconductor heterostructure 2.
• this additional third transition layer 53c is made of an alloy of aluminum antimonide and indium arsenide AISb/lnAs.
• the second confinement zone 52 is formed, like the first confinement zone 51, of a large number of repetitions of the superposition of a layer of Aluminum Antimonide AlSb of thickness comprised between 1 nm and 4 nm and a layer of indium arsenide lnAs:Si with a thickness between 1 nm and 4 nm.
• the AlSb layer has a thickness of 2.3 nm while the lnAs:Si layer has a thickness of 2.4 nm.
• the upper contact layer 54 is an indium arsenide layer InAs:Si with a thickness of between 5 nm and 50 nm, for example 20 nm.
• the light-emitting region 20 of the semiconductor heterostructure 2 is formed by a cascade of active areas 24.
• the active area is the spatial area where the emission of laser radiation takes place.
• the active zone is a zone of confinement of charge carriers of the electron and hole type.
• a hole is defined as the absence of an electron in a valence band of a semiconductor material.
• the active area may consist of one or more layers of semiconductor materials.
• the emission of photons is produced following a recombination of an electron type charge carrier with a hole type charge carrier.
• each active area 24 has a structure as shown in Figure 2.
• This structure is composed of a stack of layers 243, 242a, 241 and 242b.
• these layers have the following characteristics: layer 241 is made of ternary material based on gallium, indium and antimony Gao . 65lno .
• layers 242a and 242b are made of indium arsenide InAs and have respective thicknesses each between 1 nm and 4 nm, for example 1.6 nm and 1.4 nm;
• layer 243 is made of aluminum antimonide AlSb and has a thickness of between 1 nm and 3.5 nm, in the present case 2.5 nm.
• the composition of the ternary material based on gallium, indium and antimony of layer 241 can vary from 0% indium to 50% indium.
• the structure composed of the stack of layers 243, 242a, 241 and 242b is said to have a “W” band structure.
• Layer 211 constitutes a quantum well of holes and is surrounded by layers 212a and 212b each forming a quantum well of electrons.
• each active zone 24 is an active zone with interband transition based on a type-II quantum well, that is to say, where the extrema of the band conduction and valence band of the materials constituting the quantum well are spatially separated.
• Figure 3 schematically illustrates a type-II quantum well.
• the limit of the conduction band is materialized there by the curve BC and the limit of the valence band is materialized there by the BV curve.
• the dotted lines schematically represent a possible energy level for an electron (black circle) and for a hole (circle with a “plus” sign).
• the recombinations between electrons and holes are materialized by the thick vertical arrows and the emissions of photons are materialized by the wavy arrows. It can be observed that the minimum of the conduction band and that of the valence band are located in a first material, and that the maximum of the conduction band and that of the valence band are located in another material. If charge carriers (electrons and holes) are injected into the type II quantum well, they are spatially separated, but can nevertheless recombine with a reduced probability.
• the epitaxial growth on a substrate which does not have the same lattice parameter as the epitaxial material generates a very high density of dislocations within the component formed, that is to say a density of dislocations greater than 10 7 .cnr 2 .
• the optoelectronic component, and in particular its active zones 24, have a dislocation density of 5.10 8 ⁇ cnr 2 .
• the dislocations can be modeled by energy levels located in the forbidden energy band (“gap”), that is to say, the energy band between the conduction and the valence band.
• FIG. 4 schematically illustrates a type II quantum well comprising dislocations.
• the line BC denotes the boundary of the conduction band BC
• the line BV denotes the boundary of the valence band BV and between these two lines is the forbidden energy band Bl.
• the energy levels associated with the dislocations are represented in dotted lines.
• the inventors have had the merit of demonstrating that the use of type-II radiative transition active zones makes it possible to eliminate non-radiative recombinations at the level of dislocations. These non-radiative recombinations, which affect the emission efficiency in the active zones, therefore do not take place in the optoelectronic component 1 according to the invention.
• FIG. 5 schematically illustrates a first active zone ZA1 juxtaposed with a second active zone ZA2.
• the first active area ZA1 and the second active area ZA2 have the same physical structure. For example, they each consist of the same stack of semiconductor layers.
• the first active area ZA1 and the second active area ZA2 thus have the same band structure.
• an electron can for example recombine with a hole in the first active zone ZA1 of radiatively, thereby emitting a photon.
• the application of the electric field has the effect of vertically translating the band structure of the second active zone ZA2 with respect to the band structure of the first active zone.
• the electric field configured to lower the band structure of the second active area ZA2, that is to say to decrease all the energy levels of the second active area ZA2. Consequently, the electron continuing its journey from left to right in the cascade is able to reach the conduction band of the second active zone ZA2. The electron can then recombine with a hole in the second active zone ZA2 and emit another photon there.
• the cascading of active zones makes it possible to obtain a higher gain and therefore to supply more optical power.
• each active zone 24 is surrounded on one side by a hole blocking zone 22, and on the other side by an electron blocking zone 23.
• the hole-type charge carriers during their movement in the light-emitting region 20, encounter an electron blocking zone 23 , then an active zone 21, then a hole blocking zone 22.
• Each electron blocking zone 23 has the function of preventing the movement of electrons in one direction, more precisely, from the active zone 24 towards the electron blocking zone 23. In other words, the electrons reaching an active area 21 do not move beyond it.
• Each hole blocking zone 22 has the function of preventing the holes from moving in one direction, more precisely, from the active zone 24 towards the hole blocking zone 22. In other words, the holes do not move beyond the active area 24.
• the electrons and the holes cannot give rise to non-radiative recombinations at the level of dislocations located around the active zones 24, that is to say in an electron blocking zone 23 or in a hole blocking zone 22, due to the blocking of electrons and holes in the active zones 24 once they have reached the active zones 24.
• the hole blocking area is located under the layer 243 and the electron blocking area is located on the layer 242b.
• Figure 6 illustrates an example of assembly of an active zone 24 surrounded by a hole blocking zone 22 and a hole blocking zone 23.
• the hole blocking zone 22 is composed of a stack of eleven layers. More generally, hole blocking zone 22 can be made with a stack of eight to eighteen layers. In the present case, the hole blocking zone 22 is composed as follows:
• indium arsenide InAs with a thickness of between 3 nm and 6 nm, for example here 4.2 nm;
• a 222c layer of aluminum antimonide AlSb with a thickness of between 0.6 nm and 3 nm, here 1.2 nm;
• a 222d layer of aluminum antimonide AlSb with a thickness of between 0.6 nm and 3 nm, here 1.2 nm;
• indium arsenide InAs with a thickness of between 1 nm and 4 nm, for example 1.5 nm.
• the electron blocking zone 23 is composed of a stack of five layers.
• the electron blocking zone 23 is composed as follows:
• a layer 231 of aluminum antimonide AlSb with a thickness of between 0.3 nm and 3 nm, for example, 1 nm;
• a layer 232 of gallium antimonide GaSb with a thickness of between 1.5 nm and 5 nm, here, 3.5 nm;
• a layer 234 of gallium antimonide material with a thickness of between 2 nm and 5.5 nm, here 4.5 nm;
• a layer 235 of aluminum antimonide AlSb with a thickness of between 1 nm and 3.5 nm, for example 2.5 nm.
• FIG. 7 illustrates the band diagram of the assembly, illustrated in FIG. 6, of the active zone 24, the hole blocking zone 22 and the electron blocking zone 23.
• the arrow D shows the direction of displacement of the electron type charge carriers under the effect of the application of an electric field to the optoelectronic component 1 .
• the direction of displacement of the hole-like charge carriers under the effect of the application of the electric field is the direction opposite to the arrow D.
• the electron type charge carriers After passing through a hole blocking zone 22, the electron type charge carriers reach the active zone 24 and are blocked there due to the presence of the electron blocking zone 23 adjacent to the active zone 24 The electron type charge carriers are however recycled following radiative recombinations with the hole type charge carriers. In fact, after radiative recombination, the electrons take the place of the holes in the valence band, and can pass directly from the valence band to the conduction band and move towards the next active zone 21.
• the optoelectronic component comprising the combination of structures illustrated in FIGS. 1, 2 and 6 as described above operates as follows.
• a voltage is applied between the upper contact layer 54 and a layer bottom contact.
• the lower contact layer can be the substrate 3.
• the lower contact layer can be one of the layers located under the active area 2, that is to say, for example, the buffer layer 4, the first additional transition layer 53a, the first confinement zone 51 or the second additional transition layer 53b.
• the lower contact layer is one of layer 4 or layer 51 .
• This voltage is configured to create an electric field structuring the band diagram of the light-emitting region 20 into a succession of band diagrams similar to that illustrated in FIG. 9. The electric field triggers the circulation of charge carriers through the layers comprised between the upper contact layer 4 and the lower contact layer.
• Figures 8, 9, 10 and 11 show the performance of the optoelectronic component 1 described above.
• the optoelectronic component 1 thus formed has a width of 8 microns and a cavity length of 2 mm and operates up to a temperature of 45° C. under continuous electrical power supply.
• the optoelectronic component 1 according to the example described above has a dislocation density of 5.10 8 cm 2 .
• FIG. 8 shows the evolution of the output power of the laser radiation emitted by the semiconductor heterostructure 2 as well as of the voltage between the first confinement zone 51 and the upper contact layer 54 as a function of the current of supply of opto-electronic component 1 .
• the different curves represent these changes for temperatures ranging between 15°C and 47.5°C. It can be observed that the emission threshold current at a temperature of 20°C is 48 mA and that a maximum power of the order of 18 mW per facet is obtained at this temperature.
• Figure 9 shows the evolution of the wavelength spectrum of the laser radiation emitted by the opto-electronic component 1 obtained at a temperature of 20°C. It can be observed that the emission wavelength is between 3.4 microns and 3.5 microns.
• Figure 10 shows the evolution of the wavelength spectrum of the laser radiation emitted by the opto-electronic component 1 powered by a direct current of 120 mA for different temperatures. A weak translation of this spectrum towards long wavelengths can be observed with a maintenance of the value of the maximum normalized intensity up to 45°C.
• FIG. 11 shows the lifetime measurement of the opto-electronic component 1 subjected to a direct current of 120 mA at a temperature of 40° C. It can be observed that the output power per facet (about 4.3 mW per facet) and the threshold current (about 77 mA) do not degrade over time.
• the result illustrated in FIG. 11 can be compared to the lifetime of a quantum dot laser with a dislocation density of 5 10 8 cm -2 , that is to say the period of time after which the threshold current l t h doubles, which is about 1000 hours. It is in fact noted that the threshold current l t h of the optoelectronic component according to the invention remains stable for a period of at least 1800 hours. Furthermore, the lifetime of a quantum well laser of the prior art is impossible to measure.
• Figures 12 and 13 illustrate the performance of an optoelectronic component with a structure almost identical to that of the optoelectronic component 1 previously characterized, but obtained by epitaxial growth on a native gallium antimonide GaSb substrate.
• This device also has a width of 8 microns and a cavity length of 2 mm, and operates in the DC supply regime up to 40°C.
• Figure 12 shows the evolution of the output power of the laser radiation emitted by this component as a function of the supply current.
• the different curves represent these changes for temperatures ranging between 15°C and 45°C. It can be observed that the emission threshold current at a temperature of 20°C is 52 mA and that a maximum power of the order of 18 mW per facet is obtained at this temperature.
• Figures 14 to 17 illustrate the evolution of the laser radiation emitted by optoelectronic components according to the invention ( Figures 15 and 17) and by optoelectronic components produced on a native substrate ( Figures 14 and 16).
• the buffer layer 4 is made of GaSb and has a thickness of 500 nanometers
• the first and the second confinement zones 51 and 52 are layers of AlGaAsSb which have a thickness of 2.8 micrometers,
• the first and second heterostructures 22 and 23 are layers of GaSb doped with tellurium (GaSb:Te),
• the upper contact layer 54 is a layer of indium arsenide 20 nanometers thick
• the photoemitting zone 20 comprises seven interband cascades.
• FIGS. 14 and 15 correspond to optoelectronic components which have a cavity length of 2 millimeters.
• the different curves represent these changes for temperatures ranging between 15°C and 47.5°C.
• FIGS. 16 and 17 correspond to optoelectronic components which have a cavity length of 3 millimeters.
• the different curves represent these changes for temperatures ranging between 15°C and 47.5°C.
• the high density of dislocations in the opto-electronic component 1 according to the invention does not degrade its performance in terms of output power. , maximum operating temperature, threshold current and lifetime, in comparison with an opto-electronic component having an almost identical structure but obtained by epitaxial growth on a native gallium antimonide GaSb substrate.
• the first confinement zone and the second confinement zone can be formed from a material other than that described above and in particular from a quaternary material based on aluminium, gallium, arsenic and antimony AlGaAsSb.
• the hole blocking zone can be a stack of layers in the number between 6 and 16, formed of pairs of layers of alloy of pentanary/quinary materials based respectively on aluminium, gallium, indium, arsenic and antimony, and indium, aluminium, gallium, antimony and arsenic AI(GalnAs)Sb / ln(AIGaSb)As, with ln(AIGaSb) layer doping )As present on all or part of these layers.
• quantum well structures for the active zones 21 can be envisaged by being formed by alternations of hole wells and electron wells, on the condition that the active zones have transition gain type-ll radiation.
• the optoelectronic component according to the invention is insensitive to dislocations. It is therefore possible to dispense with the production of a layer intermediate between the substrate 3 and the heterostructure 22.
• the heterostructure 2 is produced directly on the substrate 3. It therefore does not comprise, as was the case in the previously described embodiments, the buffer layer 4 nor the confinement zone 21. In such embodiments, it is the substrate 3 which acts as the confinement zone and it is the confinement heterostructure 22 which acts as a buffer layer.

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• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Electromagnetism (AREA)
• Optics & Photonics (AREA)
• Semiconductor Lasers (AREA)
• Led Devices (AREA)

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• 2021
  • 2021-07-01 FR FR2107138A patent/FR3124890B1/fr active Active
• 2022
  • 2022-06-30 US US18/575,153 patent/US20240313509A1/en active Pending
  • 2022-06-30 CA CA3224067A patent/CA3224067A1/fr active Pending
  • 2022-06-30 EP EP22744669.7A patent/EP4364254A1/de active Pending
  • 2022-06-30 JP JP2023580955A patent/JP2024525507A/ja active Pending
  • 2022-06-30 WO PCT/EP2022/068188 patent/WO2023275320A1/fr not_active Ceased

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