EP4581192A2 - Cellule photoélectrique à électrode en carbure de silicium et procédé de fabrication correspondant - Google Patents

Cellule photoélectrique à électrode en carbure de silicium et procédé de fabrication correspondant

Info

Publication number
EP4581192A2
EP4581192A2 EP23762183.4A EP23762183A EP4581192A2 EP 4581192 A2 EP4581192 A2 EP 4581192A2 EP 23762183 A EP23762183 A EP 23762183A EP 4581192 A2 EP4581192 A2 EP 4581192A2
Authority
EP
European Patent Office
Prior art keywords
electrode
substrate
photoelectric cell
silicon carbide
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP23762183.4A
Other languages
German (de)
English (en)
Inventor
Siegmund Greulich-Weber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yellow Sic Holding GmbH
Original Assignee
Yellow Sic Holding GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yellow Sic Holding GmbH filed Critical Yellow Sic Holding GmbH
Publication of EP4581192A2 publication Critical patent/EP4581192A2/fr
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/01—Products
    • C25B1/02—Hydrogen or oxygen
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/01—Products
    • C25B1/02—Hydrogen or oxygen
    • C25B1/04—Hydrogen or oxygen by electrolysis of water
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/50—Processes
    • C25B1/55—Photoelectrolysis
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/02—Electrodes; Manufacture thereof not otherwise provided for characterised by shape or form
    • C25B11/03—Electrodes; Manufacture thereof not otherwise provided for characterised by shape or form perforated or foraminous
    • C25B11/031—Porous electrodes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/052—Electrodes comprising one or more electrocatalytic coatings on a substrate
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/055—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material
    • C25B11/057—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of a single element or compound
    • C25B11/061—Metal or alloy
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/055—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material
    • C25B11/057—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of a single element or compound
    • C25B11/065—Carbon
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/055—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material
    • C25B11/057—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of a single element or compound
    • C25B11/067—Inorganic compound e.g. ITO, silica or titania
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
    • C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
    • C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
    • C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
    • C25B11/075—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of a single catalytic element or catalytic compound
    • C25B11/087—Photocatalytic compound
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
    • C25B9/17—Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof
    • C25B9/19—Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof with diaphragms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
    • C25B9/50—Cells or assemblies of cells comprising photoelectrodes; Assemblies of constructional parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Definitions

  • the invention relates to a photoelectric cell with a silicon carbide electrode for the photocatalytic production of hydrogen and a manufacturing process therefor.
  • EP 3268512 Bl discloses a photoelectric cell for producing hydrogen by electrolytically splitting water upon irradiation with sunlight (photocatalysis).
  • the cell contains a SiC electrode in which sunlight generates charge carriers and an electrical current flow that causes the electrolytic splitting of the water.
  • the SiC electrode has a porous fiber structure. This structure is intended to provide a large surface area and is produced by transforming carbon fibers into silicon carbide in a process, for example according to EP 2094622 Bl.
  • the carbon fibers of the electrodes are only superficially transformed into SiC.
  • Carbon fibers with a thickness of, for example, 10 pm only have an approximately 2-3 pm thin layer of SiC on their surface, in which only part of the incident light is absorbed photocatalytically effectively.
  • the core of the fibers is untransformed carbon and opaque. The part of the light absorbed there only leads to heating of the electrode and is lost to photocatalysis.
  • the desired increase in surface area through porosity of the fiber structure hardly provides any remedy here.
  • the porosity is typically only around 50%.
  • the invention is therefore based on the object of providing a technology that allows the photocatalytic production of hydrogen with better efficiency.
  • the invention uses a photoelectrode in the form of a layer of 3C-S1C or amorphous SiC.
  • 3C-S1C cubic silicon carbide
  • a band gap of 2.36 eV is suitable for efficiently generating charge carriers of sufficient energy to electrolytically split water without additional application of an electrical voltage, just by irradiation with sunlight.
  • the spectrum of sunlight is used efficiently.
  • amorphous SiC which has a band gap of around 2.2 eV.
  • the layer can be an independent plate or a coating of a substrate with SiC, for example a substrate made of metal, graphite, plastic, glass, or similar with nano- or microcrystalline 3C-S1C or amorphous SiC.
  • the SiC layer can be undoped, p-doped, for example with Al or B and/or co-doped, for example with transition metal elements such as Fe, Cr, V.
  • the photoelectrode is an electrode with a surface facing the light. This surface can be coated with a co-catalyst, such as Pt or Pd.
  • Embodiments of the invention achieve an improvement in the optical transmission or a reduction in reflection on the optical path to the electrode, an increase in the optically or electrochemically active electrode surface, an improvement in the electrical conductivity and contacting of the electrode and easy scalability of the cell size ("Up -scaling" to square meter modules and larger). Exemplary embodiments of the invention are shown in the drawing. It shows:
  • Fig. 1 is a schematic representation of a photoelectric cell according to a first exemplary embodiment
  • Fig. 2 a more detailed representation of a photoelectric cell according to a second exemplary embodiment derived from the first
  • Fig. 3 a schematic representation of a photoelectric cell according to a third exemplary embodiment.
  • the photoelectric cell shown in FIG. 1 has a housing 1 with a translucent window 2.
  • the window 2 has a transparent plate 3, in particular a glass plate 3.
  • a transparent plastic plate can also be used.
  • the 3C-S1C is preferably nano- or microcrystalline. Alternatively, amorphous SiC can also be used.
  • This SiC electrode 4 has the shape of a non-porous or barely porous thin SiC layer 4 with a thickness in the range from 40 to 80 ⁇ m. Within this Thickness, sunlight 5 entering through the window 2 is absorbed in the best possible way.
  • the SiC layer 4 can be applied to the transparent plate 3, which serves as a transparent substrate 3.
  • a counter electrode 6 is arranged, which is an electrically highly conductive metal foam 6, in the present preferred exemplary embodiment it is nickel foam 6 .
  • the metal or Nickel foam 6 has a thickness in the range of approximately 3 to 40 mm.
  • the surface of the metal foam 6 can be provided with a catalyst that facilitates the splitting of water. Polyoxometalates on the nickel foam 6 are particularly suitable as catalysts, particularly those made from nickel, cobalt and tungsten.
  • the nickel foam 6 is soaked with an aqueous electrolyte 10, which also comes into contact with the SiC electrode 4 and in which the water contained therein is to be split into hydrogen and oxygen.
  • the housing 1 has an inlet and an outlet (not shown in FIG. 1) for circulating the electrolyte or Water through the nickel foam 6 in the housing 1.
  • An electrical conductor in the present case the electrically conductive or conductively coated housing 1, closes the circuit between the nickel foam 6 and the SiC electrode 4.
  • a transparent conductive layer can be provided between the window 2 and the SiC electrode 4, which is electrically connected to this conductor and contacts the SiC electrode 4 over a large area and with a low resistance.
  • the housing 1 has an outlet 8 for gaseous hydrogen f and an outlet 9 for gaseous oxygen f.
  • a proton-permeable membrane 7 (shown schematically) is provided between the SiC electrode 4 and the nickel foam 6.
  • the membrane 7 separates the electrolyte-soaked nickel foam 6 from the outlet 8 for hydrogen f and allows hydrogen f to pass to the outlet 8, but not the aqueous electrolyte 10 itself and the oxygen f.
  • the outlet 9 for gaseous oxygen f is connected directly to the soaked nickel foam 6.
  • FIG. 4 can be with a metal layer, for example made of solid metal and/or metal or Be provided with nickel foam. Such a modification of the exemplary embodiment of FIG. 1 is described below in connection with FIG. 3.
  • the sunlight 5 passes through the window 2, here through the glass plate 3, illuminates the SiC electrode 4 and photoelectrically generates charge carriers in it, which, depending on the doping of the SiC electrode 4, are electrons or holes. Because the light
  • the SiC electrode 4 can illuminate the electrolyte-free side of the SiC electrode 4 directly without passing through the electrolyte, it is weakened slightly on the way to the electrode 4. With the aforementioned thickness of the SiC electrode 4 in the range of 40 to 80 pm, the penetration depth of the sunlight 5 is used to the maximum. Since the thin layer of the SiC electrode 4 is hardly or not at all porous, there is effective absorption of the sunlight 5 and good conductivity for the charge carriers generated therein causes.
  • the membrane 7 is proton-permeable, acts as a proton separator and separates the hydrogen f from the oxygen f by allowing the hydrogen f to diffuse to the outlet 8.
  • the oxygen bubbles up from the aqueous electrolyte 10 and exits the housing 1 through the outlet 9.
  • This heat energy can be generated by circulating the aqueous electrolyte or Water can be removed from the cell through the inlet and outlet (not shown in Figure 1) and used for other purposes.
  • Figure 2 shows in more detail a modification of the exemplary embodiment of Figure 1.
  • the photoelectric cell is shown inclined here, so that the window 2 faces the obliquely incident solar radiation.
  • the nickel foam As in the exemplary embodiment of Figure 1, the nickel foam
  • FIG. 2 shows the water inlet 11 at the bottom of the housing 1 and the water outlet 12 at the top of the housing 1 at approximately the level of the water level, both of which are not shown in the more schematic FIG. 1.
  • the structure and operation of the cell are the same as the exemplary embodiment of Figure 1.
  • the exemplary embodiment of Figure 2 differs from that of Figure 1, however, in the features of the membrane 7 and the outlet 9 for the oxygen f described below.
  • the membrane 7 is arranged in a gas space 13, 14 above the water level in the housing 1, where it divides the gas space into a part 13 of higher pressure on the side of the water 10 and a part 14 of lower pressure on the side of the outlet 8 for hydrogen gas.
  • the respective pressure is maintained during operation by the production of hydrogen gas and oxygen gas in the aqueous electrolyte 10 and by the work of a compressor (not shown), which withdraws the hydrogen from the outlet 8 and supplies it to a gas network or storage facility.
  • the pressure difference promotes the passage of hydrogen through the membrane 7 and thus the separation of hydrogen and oxygen.
  • the outlet 9 for the oxygen gas is connected to an oxygen separator 15, which is arranged in the water outlet 12.
  • the circulation of the aqueous electrolyte or Water 10 through the drain 12 not only serves to use the heat of the aqueous electrolyte 10 but also the Extraction of oxygen from the aqueous electrolyte 10.
  • Figure 3 shows a further modification of the exemplary embodiment of Figure 1, whereby the same modification can also be made compared to the exemplary embodiment of Figure 2.
  • the exemplary embodiment of Figure 3 differs from those of Figures 1 and 2 in the following features.
  • the SiC electrode 4 (SiC layer 4) of the composition and thickness specified above is applied here to a conductive substrate 36 made of graphite or metal, which is arranged between the SiC electrode 4 on the one hand and the aqueous electrolyte 10 and the nickel foam 6 on the other hand .
  • the window 2 here does not have a thick, transparent glass or plastic plate but rather a thin, transparent layer 33 made of a highly transparent plastic, e.g. B. a resin, plexiglass or similar, which seals the SiC electrode 4 against dust, contamination, etc.
  • a highly transparent plastic e.g. B. a resin, plexiglass or similar, which seals the SiC electrode 4 against dust, contamination, etc.
  • Such highly transparent plastics have a significantly higher transmission than glass in the spectral range in which the SiC electrode 4 is photosensitive, especially in the UV range.
  • the SiC electrode 4 can be an independent thin plate (wafer) which is laminated with the described components to form the photoelectric cell.
  • the SiC electrode 4 is advantageously produced as a coating of a substrate, which is the transparent plate 3 serving as the transparent substrate 3, for example made of glass or plastic, or the conductive substrate 36, for example made of graphite or metal.
  • the method used to coat the substrate 3, 36 should be controllable so that the coating produces an electrode 4 made of essentially amorphous SiC or 3C-SiC (preferably nano- or microcrystalline), but not hexagonal SiC. This can be achieved by controlling (limiting) the temperature of the substrate 3, 36 during coating.
  • a suitable coating method is the vapor phase deposition of a 3C-SiC layer 4 or an amorphous SiC layer 4 on the substrate 3, 36 by exposing the substrate 3, 36 to a gas containing Si and C.
  • the gas can be generated by heating a precursor containing Si and C, for example by heating a solid precursor, for example.
  • a mixture of fumed silica and soot is made from a mixture of fumed silica and soot, to temperatures from about 1400 ° C, preferably about 1600 to 1900 ° C, or by heating a gaseous precursor, for example. a mixture of tetrachlorosilane and a hydrocarbon gas, at temperatures of about 900 to 1300 ° C or more.
  • a gaseous precursor for example. a mixture of tetrachlorosilane and a hydrocarbon gas, at temperatures of about 900 to 1300 ° C or more.
  • the above-mentioned dopants can be added to the precursor and/or the gas.
  • a temperature gradient should be maintained in which the substrate 3, 36 has a lower temperature than the gas.
  • the substrate temperatures are in the range from 1100 to 1300 ° C.
  • the substrate temperatures are in the range from 1400 to 1900 ° C.
  • the substrate 3, 36 has a temperature of about 1500° C. and the gas containing Si and C has a temperature of about 1800° C. in order to deposit 3C-S1C.
  • a deposition process at these temperatures is particularly suitable for coating metal and in particular graphite and therefore for coating the conductive substrate 36.
  • the SiC electrode 4 can be applied as a thin layer 4 on the substrate 3, 36 at lower temperatures, in particular at room temperature and therefore particularly gently, without to change it significantly or even damage it. These methods are therefore suitable not only for coating the conductive substrate 36 but also for coating the transparent substrate 3 made of glass or plastic:
  • Coating the substrate 3, 36 by means of cold plasma spraying by adding said powdery precursor or a liquid suspension of the precursor to a cold plasma jet directed onto the substrate 3, 36; or
  • Flash lamp annealing of a precursor previously applied to the substrate 3, 36 which contains a silicon source and a carbon source in liquid or powder form, for example the aforementioned powdered precursor.
  • a precursor previously applied to the substrate 3, 36, which contains a silicon source and a carbon source in liquid or powder form, for example the aforementioned powdered precursor.
  • no opaque layer for example made of excess carbon, that hinders the sunlight 5
  • no insulating layer for example made of silicon dioxide, that hinders the charge carrier transport to the nickel foam 6 should arise.
  • These requirements can also be met with the specified temperature gradient and a control of the composition of the precursor or of the Si- and C-containing gas, so that stoichiometric SiC forms on the substrate 3, 36.
  • the exemplary embodiments mentioned can be supplemented and modified.
  • concentrators such as mirrors can be provided in order to concentrate the sunlight before it enters the window 2 and to reduce the area required by the photoelectric cell.
  • the window 2 can also simply be an opening in the housing 1, where the SiC electrode 4 is exposed - without a transparent plate 3 being present.
  • the thin transparent layer 33 only needs to be present if the SiC electrode 4 is exposed to adverse environmental influences.
  • the photoelectric cell is suitable for operation not only with sunlight but also with light from other sources.
  • the individual features of a respective exemplary embodiment can be combined with the features of another exemplary embodiment.

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Photovoltaic Devices (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Catalysts (AREA)

Abstract

L'invention concerne une cellule photoélectrique, dotée d'une électrode en carbure de silicium (4), destinée à la production photocatalytique d'hydrogène et un procédé de fabrication correspondant. La cellule présente, sur une face de l'électrode en carbure de silicium (4), une fenêtre (2) permettant de laisser entrer de la lumière (5) et, sur l'autre face de l'électrode en carbure de silicium (4), un électrolyte aqueux (10) et une contre-électrode (6). Sur la face de l'électrode en carbure de silicium (4) tournée vers la fenêtre, la cellule est exempte d'électrolyte. L'électrode en carbure de silicium (4) est obtenue de préférence par revêtement d'un substrat (3) avec du carbure de silicium (4).
EP23762183.4A 2022-08-30 2023-08-24 Cellule photoélectrique à électrode en carbure de silicium et procédé de fabrication correspondant Pending EP4581192A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102022121924.0A DE102022121924A1 (de) 2022-08-30 2022-08-30 Photoelektrische Zelle mit Siliziumkarbidelektrode und Herstellungsverfahren dafür
PCT/EP2023/073220 WO2024046860A2 (fr) 2022-08-30 2023-08-24 Cellule photoélectrique à électrode en carbure de silicium et procédé de fabrication correspondant

Publications (1)

Publication Number Publication Date
EP4581192A2 true EP4581192A2 (fr) 2025-07-09

Family

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Family Applications (1)

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EP23762183.4A Pending EP4581192A2 (fr) 2022-08-30 2023-08-24 Cellule photoélectrique à électrode en carbure de silicium et procédé de fabrication correspondant

Country Status (8)

Country Link
US (1) US20260049404A1 (fr)
EP (1) EP4581192A2 (fr)
JP (1) JP2025529023A (fr)
KR (1) KR20250060196A (fr)
AU (1) AU2023331556A1 (fr)
DE (1) DE102022121924A1 (fr)
IL (1) IL317880A (fr)
WO (1) WO2024046860A2 (fr)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4011149A (en) * 1975-11-17 1977-03-08 Allied Chemical Corporation Photoelectrolysis of water by solar radiation
DE102006055469A1 (de) 2006-11-23 2008-05-29 Universität Paderborn Verfahren zur Herstellung eines Gegenstandes zumindest teilweise mit Siliziumkarbidgefüge aus einem Rohling aus einem kohlenstoffhaltigen Material
NL2011796C2 (en) * 2013-11-13 2015-05-19 Univ Delft Tech High efficiency photoelectrochemical device for splitting water.
DE102015103739A1 (de) 2015-03-13 2016-09-15 Universität Paderborn Verfahren zum Herstellen einer Elektrode, Elektrode und Elektrolysevorrichtung
CN114207187B (zh) * 2019-08-08 2024-08-02 奈诺普特科公司 辐射辅助电解槽单元和组
WO2021224722A1 (fr) * 2020-05-05 2021-11-11 Sabic Global Technologies B.V. Réacteur photo-électro-chimique unifié pour la production d'hydrogène solaire

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US20260049404A1 (en) 2026-02-19
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