EP4698706A1 - Dispositif de fabrication de monocristaux et son procédé d'utilisation - Google Patents

Dispositif de fabrication de monocristaux et son procédé d'utilisation

Info

Publication number
EP4698706A1
EP4698706A1 EP23938676.6A EP23938676A EP4698706A1 EP 4698706 A1 EP4698706 A1 EP 4698706A1 EP 23938676 A EP23938676 A EP 23938676A EP 4698706 A1 EP4698706 A1 EP 4698706A1
Authority
EP
European Patent Office
Prior art keywords
growth chamber
furnace
inert gas
conduit
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP23938676.6A
Other languages
German (de)
English (en)
Inventor
Mark Andreaco
Troy Marlar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Medical Solutions USA Inc
Original Assignee
Siemens Medical Solutions USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Medical Solutions USA Inc filed Critical Siemens Medical Solutions USA Inc
Publication of EP4698706A1 publication Critical patent/EP4698706A1/fr
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/34—Silicates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Est divulgué ici un dispositif de production d'un monocristal comprenant un four, le four comprenant une paroi de four, une plaque de base de four et un couvercle de four ; la paroi de four étant disposée entre la plaque de base de four et le couvercle de four ; une chambre de croissance comprenant un tube externe, une plaque inférieure de chambre de croissance et une plaque supérieure de chambre de croissance ; le couvercle de four ayant une ouverture à travers laquelle la chambre de croissance fait saillie et la chambre de croissance étant opérationnelle pour contenir un creuset qui contient une masse fondue pour fabriquer le monocristal ; une tige de traction qui entre en contact avec la masse fondue pour produire une boule de cristal ; et un conduit disposé entre la paroi de four et le tube externe de la chambre de croissance ; le conduit étant opérationnel pour transporter un gaz inerte à travers le four pour chauffer le gaz inerte et pour déposer le gaz inerte chauffé dans la chambre de croissance.
EP23938676.6A 2023-05-22 2023-05-22 Dispositif de fabrication de monocristaux et son procédé d'utilisation Pending EP4698706A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2023/067277 WO2024242705A1 (fr) 2023-05-22 2023-05-22 Dispositif de fabrication de monocristaux et son procédé d'utilisation

Publications (1)

Publication Number Publication Date
EP4698706A1 true EP4698706A1 (fr) 2026-02-25

Family

ID=93589522

Family Applications (1)

Application Number Title Priority Date Filing Date
EP23938676.6A Pending EP4698706A1 (fr) 2023-05-22 2023-05-22 Dispositif de fabrication de monocristaux et son procédé d'utilisation

Country Status (3)

Country Link
EP (1) EP4698706A1 (fr)
CN (1) CN121002234A (fr)
WO (1) WO2024242705A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1366532A (en) * 1971-04-21 1974-09-11 Nat Res Dev Apparatus for the preparation and growth of crystalline material
JP3001181B2 (ja) * 1994-07-11 2000-01-24 株式会社クボタ エチレン製造用反応管
US6624420B1 (en) * 1999-02-18 2003-09-23 University Of Central Florida Lutetium yttrium orthosilicate single crystal scintillator detector
US6444038B1 (en) * 1999-12-27 2002-09-03 Morton International, Inc. Dual fritted bubbler
DE10260399B3 (de) * 2002-12-21 2004-07-01 Wieland-Werke Ag Verfahren und Fertigungslinie zum Herstellen von U-förmig gebogenen Rohren sowie die Verwendung der nach diesem Verfahren hergestellten Rohre

Also Published As

Publication number Publication date
WO2024242705A1 (fr) 2024-11-28
CN121002234A (zh) 2025-11-21

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