ES191965U - Placa rectificadora de selenio. - Google Patents

Placa rectificadora de selenio.

Info

Publication number
ES191965U
ES191965U ES0191965U ES191965U ES191965U ES 191965 U ES191965 U ES 191965U ES 0191965 U ES0191965 U ES 0191965U ES 191965 U ES191965 U ES 191965U ES 191965 U ES191965 U ES 191965U
Authority
ES
Spain
Prior art keywords
selenium
layer
addition
partial
rectifier plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES0191965U
Other languages
English (en)
Other versions
ES191965Y (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of ES191965U publication Critical patent/ES191965U/es
Application granted granted Critical
Publication of ES191965Y publication Critical patent/ES191965Y/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Physical Vapour Deposition (AREA)
  • Hybrid Cells (AREA)

Abstract

Placa rectificadora de selenio, caracterizada porque la capa de selenio está formada por tres capas parciales, porque la primera capa parcial de selenio que se encuentra encima de la placa soporte metálica, así como la tercera capa parcial de selenio contigua al electrodo de tapa es de selenio con una adición de halógeno, y porque la capa central de selenio es de selenio con una adición de halógeno y con una adición de indio y está dispuesta después del primer tercio de la capa de selenio.
ES1973191965U 1969-12-19 1973-05-29 Placa rectificadora de selenio. Expired ES191965Y (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691963738 DE1963738A1 (de) 1969-12-19 1969-12-19 Verfahren zur Herstellung von Selengleichrichterplatten

Publications (2)

Publication Number Publication Date
ES191965U true ES191965U (es) 1974-09-01
ES191965Y ES191965Y (es) 1975-01-01

Family

ID=5754393

Family Applications (2)

Application Number Title Priority Date Filing Date
ES387300A Expired ES387300A1 (es) 1969-12-19 1970-12-17 Procedimiento para la fabricacion de placas rectificadoras de selenio.
ES1973191965U Expired ES191965Y (es) 1969-12-19 1973-05-29 Placa rectificadora de selenio.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES387300A Expired ES387300A1 (es) 1969-12-19 1970-12-17 Procedimiento para la fabricacion de placas rectificadoras de selenio.

Country Status (5)

Country Link
DE (1) DE1963738A1 (es)
ES (2) ES387300A1 (es)
FR (1) FR2073483B1 (es)
GB (1) GB1331074A (es)
SE (1) SE356166B (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1430961A (en) * 1972-01-22 1976-04-07 Yamanouchi Pharma Co Ltd 1-substituted-1,4-dihyddrypyridine derivatives
DE3942884A1 (de) * 1989-12-23 1991-06-27 Sitec Gmbh Sicherheitseinricht Trommelschleuse

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1060053B (de) * 1953-02-10 1959-06-25 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern mit einem mehrschichtigen Halbleiter mit verschiedenem Gehalt an Halogen und elektropositiven Zusaetzen in den einzelnen Schichten
BE561366A (es) * 1954-11-29

Also Published As

Publication number Publication date
ES191965Y (es) 1975-01-01
ES387300A1 (es) 1973-11-16
SE356166B (es) 1973-05-14
FR2073483B1 (es) 1976-05-28
FR2073483A1 (es) 1971-10-01
DE1963738A1 (de) 1971-06-24
GB1331074A (en) 1973-09-19

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