ES2006119A6 - Procedimiento de obtencion de nitruro de silicio. - Google Patents

Procedimiento de obtencion de nitruro de silicio.

Info

Publication number
ES2006119A6
ES2006119A6 ES8800898A ES8800898A ES2006119A6 ES 2006119 A6 ES2006119 A6 ES 2006119A6 ES 8800898 A ES8800898 A ES 8800898A ES 8800898 A ES8800898 A ES 8800898A ES 2006119 A6 ES2006119 A6 ES 2006119A6
Authority
ES
Spain
Prior art keywords
preparation
silicon nitride
silicon
procedure
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES8800898A
Other languages
English (en)
Inventor
Fernandez Cri Gomez-Aleixandre
Garrido Domingo Diaz
Martinez Federico Serrano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ercros SA
Original Assignee
Union Explosivos Rio Tinto SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Explosivos Rio Tinto SA filed Critical Union Explosivos Rio Tinto SA
Priority to ES8800898A priority Critical patent/ES2006119A6/es
Priority to EP89500039A priority patent/EP0334791A1/en
Publication of ES2006119A6 publication Critical patent/ES2006119A6/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C04B41/5062—Borides, Nitrides or Silicides
    • C04B41/5066—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PROCEDIMIENTO DE OBTENCION DE NITRURO EN FORMA DE SILICIO. PROCEDIMIENTO DE OBTENCION DE NITRURO DE SOLICIO EN FORMA DE POLVO O RECUBRIMIENTO DE PIEZAS MEDIANTE LA TECNICA DE DEPOSICION QUIMICA EN FASE DE VAPOR AYUDADA POR PLASMA (PECVD) A UNOS 900-1.100GC, PARTIENDO DE GASES QUE CONTIENEN NITROGENO Y SILICIO TALES COMO N2, NH3, SIH4, SIF4, SIH2CL2, ETC., Y, EN ALGUNOS CASOS,
ES8800898A 1988-03-24 1988-03-24 Procedimiento de obtencion de nitruro de silicio. Expired ES2006119A6 (es)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ES8800898A ES2006119A6 (es) 1988-03-24 1988-03-24 Procedimiento de obtencion de nitruro de silicio.
EP89500039A EP0334791A1 (en) 1988-03-24 1989-03-22 Process for the preparation of silicon nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES8800898A ES2006119A6 (es) 1988-03-24 1988-03-24 Procedimiento de obtencion de nitruro de silicio.

Publications (1)

Publication Number Publication Date
ES2006119A6 true ES2006119A6 (es) 1989-04-01

Family

ID=8255513

Family Applications (1)

Application Number Title Priority Date Filing Date
ES8800898A Expired ES2006119A6 (es) 1988-03-24 1988-03-24 Procedimiento de obtencion de nitruro de silicio.

Country Status (2)

Country Link
EP (1) EP0334791A1 (es)
ES (1) ES2006119A6 (es)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2069462A1 (es) * 1993-03-11 1995-05-01 Consejo Superior Investigacion Mejoras en el procedimiento para la obtencion y recogida de nitruro de silicio en forma de polvo.
ES2358831A1 (es) * 2009-11-03 2011-05-16 Cosentino S.A.U. Sustrato de piedra natural recubierto y procedimiento de obtención.

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0630425A1 (de) * 1992-03-09 1994-12-28 Mtu Motoren- Und Turbinen-Union MàœNchen Gmbh Verfahren zum beschichten von kohlenstoffaserverstärktem kohlenstoff und danach hergestelltes produkt
US5298287A (en) * 1993-02-05 1994-03-29 United Technologies Corporation Method of making CVD Si3 N4
JP2641385B2 (ja) * 1993-09-24 1997-08-13 アプライド マテリアルズ インコーポレイテッド 膜形成方法
US6528430B2 (en) * 2001-05-01 2003-03-04 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3
US6929831B2 (en) 2001-09-15 2005-08-16 Trikon Holdings Limited Methods of forming nitride films
CN102659086B (zh) * 2012-05-04 2014-08-20 中国人民解放军国防科学技术大学 一种氮化硅纳米纤维毡的制备方法
CN105712305A (zh) * 2014-12-02 2016-06-29 沈阳鑫劲粉体工程有限责任公司 一种新型氮化硅粉体的合成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4089992A (en) * 1965-10-11 1978-05-16 International Business Machines Corporation Method for depositing continuous pinhole free silicon nitride films and products produced thereby
GB1106510A (en) * 1966-10-17 1968-03-20 Standard Telephones Cables Ltd A method of depositing silicon nitride
GB1199811A (en) * 1968-03-09 1970-07-22 British Titan Products Production of Nitrogen-Containing Compounds
JPS5845177B2 (ja) * 1979-03-09 1983-10-07 富士通株式会社 半導体表面絶縁膜の形成法
US4704300A (en) * 1984-03-12 1987-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for producing silicon nitride layer
JPS61174128A (ja) * 1985-01-28 1986-08-05 Sumitomo Electric Ind Ltd レンズ成形用型
FR2591412A1 (fr) * 1985-12-10 1987-06-12 Air Liquide Procede de fabrication de poudres et reacteur etanche a plasma micro-onde

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2069462A1 (es) * 1993-03-11 1995-05-01 Consejo Superior Investigacion Mejoras en el procedimiento para la obtencion y recogida de nitruro de silicio en forma de polvo.
ES2358831A1 (es) * 2009-11-03 2011-05-16 Cosentino S.A.U. Sustrato de piedra natural recubierto y procedimiento de obtención.

Also Published As

Publication number Publication date
EP0334791A1 (en) 1989-09-27

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FD1A Patent lapsed

Effective date: 19990405