ES2048144T3 - Catodo de pulverizacion magnetron. - Google Patents

Catodo de pulverizacion magnetron.

Info

Publication number
ES2048144T3
ES2048144T3 ES87105743T ES87105743T ES2048144T3 ES 2048144 T3 ES2048144 T3 ES 2048144T3 ES 87105743 T ES87105743 T ES 87105743T ES 87105743 T ES87105743 T ES 87105743T ES 2048144 T3 ES2048144 T3 ES 2048144T3
Authority
ES
Spain
Prior art keywords
poles
pole tabs
anode
interior
spray cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES87105743T
Other languages
English (en)
Inventor
Santos Pereira Ribeiro Car Dos
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of ES2048144T3 publication Critical patent/ES2048144T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Solid Thermionic Cathode (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Finishing Walls (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Gas-Filled Discharge Tubes (AREA)
  • Glass Compositions (AREA)

Abstract

MAQUETON DE CATODO DE PULVERIZACION QUE EN SU PARTE DELANTERA CONTACTAN UNOS CUERPOS PORTADORES (13) EN FORMA DE PLACAS CON EL ANODO (10) Y EN LA PARTE TRASERA CONTACTAN CON CUERPOS PORTADORES (13) CON UN SISTEMA MAGNETICO PERMANENTE EN FORMA DE PLACA. EL SISTEMA MAGNETICO PERMANENTE INTERIORMENTE DISPONE DE UNOS POLOS MAGNETICOS (16) EN FORMA DE VIGA EXTENDIDOS A LO LARGO DE LA LINEA CENTRAL, DOTADOS CON UNAS LENGUETAS DE POLO (17) CON SALIENTES EXTERIORES SEPARADOS A UNA DISTANCIA UNIFORME, Y EXTERIORMENTE DE UNOS POLOS MAGNETICOS (15) RECTANGULARES O CUADRADOS CON UNAS LENGUETAS DE POLO (19) LATERALES SITUADAS FRONTALMENTE A LOS POLOS MAGNETICOS (14) INTERIORES Y EN FORMA DE VIGA QUE DESCANSAN ENTRE CADA DOS LENGUETAS DE POLO (17), PRESENTAN Y GENERAN UN CAMPO MAGNETICO MEANDRICO QUE SE EXTIENDE TOTAL Y HOMOGENEAMENTE SOBRE LA SUPERFICIE DEL ANODO (10).
ES87105743T 1986-04-17 1987-04-16 Catodo de pulverizacion magnetron. Expired - Lifetime ES2048144T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19863613018 DE3613018A1 (de) 1986-04-17 1986-04-17 Magnetron-zerstaeubungskathode

Publications (1)

Publication Number Publication Date
ES2048144T3 true ES2048144T3 (es) 1994-03-16

Family

ID=6298927

Family Applications (1)

Application Number Title Priority Date Filing Date
ES87105743T Expired - Lifetime ES2048144T3 (es) 1986-04-17 1987-04-16 Catodo de pulverizacion magnetron.

Country Status (5)

Country Link
US (1) US4826584A (es)
EP (1) EP0242826B1 (es)
AT (1) ATE96941T1 (es)
DE (2) DE3613018A1 (es)
ES (1) ES2048144T3 (es)

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US5009765A (en) * 1990-05-17 1991-04-23 Tosoh Smd, Inc. Sputter target design
US5171415A (en) * 1990-12-21 1992-12-15 Novellus Systems, Inc. Cooling method and apparatus for magnetron sputtering
US5230459A (en) * 1992-03-18 1993-07-27 Tosoh Smd, Inc. Method of bonding a sputter target-backing plate assembly assemblies produced thereby
US5269899A (en) * 1992-04-29 1993-12-14 Tosoh Smd, Inc. Cathode assembly for cathodic sputtering apparatus
US5374343A (en) * 1992-05-15 1994-12-20 Anelva Corporation Magnetron cathode assembly
DE4301516C2 (de) * 1993-01-21 2003-02-13 Applied Films Gmbh & Co Kg Targetkühlung mit Wanne
US5487822A (en) * 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
US5433835B1 (en) * 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US5628889A (en) * 1994-09-06 1997-05-13 International Business Machines Corporation High power capacity magnetron cathode
US5597459A (en) * 1995-02-08 1997-01-28 Nobler Technologies, Inc. Magnetron cathode sputtering method and apparatus
JPH09176849A (ja) 1995-12-22 1997-07-08 Applied Materials Inc スパッタリングターゲットのアッセンブリ
US5736019A (en) * 1996-03-07 1998-04-07 Bernick; Mark A. Sputtering cathode
US5863398A (en) * 1996-10-11 1999-01-26 Johnson Matthey Electonics, Inc. Hot pressed and sintered sputtering target assemblies and method for making same
US6274015B1 (en) 1996-12-13 2001-08-14 Honeywell International, Inc. Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same
US5803342A (en) * 1996-12-26 1998-09-08 Johnson Matthey Electronics, Inc. Method of making high purity copper sputtering targets
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
JP2000509765A (ja) 1997-03-19 2000-08-02 ジョンソン マッセイ エレクトロニクス，インク． バッキングプレートに拡散接合されたｎｉ−鍍金ターゲット
US6340415B1 (en) 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
US6451185B2 (en) 1998-08-12 2002-09-17 Honeywell International Inc. Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same
EP1322444A4 (en) * 2000-09-11 2008-01-23 Tosoh Smd Inc METHOD FOR MANUFACTURING CATHODIC SPUTTER TARGETS WITH INTERNAL COOLING CHANNELS
US7513982B2 (en) * 2004-01-07 2009-04-07 Applied Materials, Inc. Two dimensional magnetron scanning for flat panel sputtering
US20060049040A1 (en) * 2004-01-07 2006-03-09 Applied Materials, Inc. Apparatus and method for two dimensional magnetron scanning for sputtering onto flat panels
US8500975B2 (en) * 2004-01-07 2013-08-06 Applied Materials, Inc. Method and apparatus for sputtering onto large flat panels
EP1710829A1 (de) 2005-04-05 2006-10-11 Applied Films GmbH & Co. KG Magnetanordnung für ein Planar-Magnetron
JP4923450B2 (ja) * 2005-07-01 2012-04-25 富士ゼロックス株式会社 バッチ処理支援装置および方法、プログラム
US20070084720A1 (en) * 2005-07-13 2007-04-19 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012663A1 (en) * 2005-07-13 2007-01-18 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012559A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Method of improving magnetron sputtering of large-area substrates using a removable anode
US20070012558A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Magnetron sputtering system for large-area substrates
JP2009503255A (ja) * 2005-07-25 2009-01-29 アプライド マテリアルズ インコーポレイテッド ラージフラットパネルにスパッタリングする方法及び装置
US20070051616A1 (en) * 2005-09-07 2007-03-08 Le Hienminh H Multizone magnetron assembly
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US7588668B2 (en) * 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
US20070056850A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070080056A1 (en) * 2005-10-07 2007-04-12 German John R Method and apparatus for cylindrical magnetron sputtering using multiple electron drift paths
WO2007131506A1 (en) * 2006-05-13 2007-11-22 Polyteknik A/S Vacuum coating apparatus
DE102010049329A1 (de) * 2010-10-22 2012-04-26 Forschungszentrum Jülich GmbH Sputterquellen für Hochdrucksputtern mit großen Targets und Sputterverfahren
WO2012102092A1 (ja) * 2011-01-24 2012-08-02 日立金属株式会社 マグネトロンスパッタリング用磁場発生装置
DE202011005269U1 (de) 2011-04-14 2012-07-16 Quin Gmbh Dekorformteil
US10325763B2 (en) * 2017-01-20 2019-06-18 Applied Materials, Inc. Physical vapor deposition processing systems target cooling
US10950498B2 (en) 2017-05-31 2021-03-16 Applied Materials, Inc. Selective and self-limiting tungsten etch process
WO2018222443A1 (en) 2017-05-31 2018-12-06 Applied Materials, Inc. Methods for wordline separation in 3d-nand devices
US10685821B2 (en) 2017-08-18 2020-06-16 Applied Materials, Inc. Physical vapor deposition processing systems target cooling
GB2562128B (en) * 2017-09-29 2020-08-05 Camvac Ltd Apparatus and Method for Processing, Coating or Curing a Substrate
EP3721466B1 (en) * 2017-12-05 2023-06-07 Oerlikon Surface Solutions AG, Pfäffikon Magnetron sputtering source and coating system arrangement
JP7362327B2 (ja) * 2019-07-18 2023-10-17 東京エレクトロン株式会社 ターゲット構造体及び成膜装置
PL448416A1 (pl) 2024-04-25 2025-03-03 Uniwersytet Przyrodniczy W Lublinie Biostymulator roślinny
PL247049B1 (pl) 2024-04-25 2025-05-05 Univ Of South Bohemia In Ceske Budejovice Biostymulator roślinny i sposób jego wytwarzania
PL247048B1 (pl) 2024-04-25 2025-05-05 Univ Of South Bohemia In Ceske Budejovice Biostymulator roślinny i sposób jego wytwarzania

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DE2707144A1 (de) * 1976-02-19 1977-08-25 Sloan Technology Corp Kathodenzerstaeubungsvorrichtung
DE2735525A1 (de) * 1977-08-06 1979-02-22 Leybold Heraeus Gmbh & Co Kg Katodenanordnung mit target fuer zerstaeubungsanlagen zum aufstaeuben dielektrischer oder amagnetischer schichten auf substrate
US4461688A (en) * 1980-06-23 1984-07-24 Vac-Tec Systems, Inc. Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method
EP0046154B1 (en) * 1980-08-08 1984-11-28 Battelle Development Corporation Apparatus for coating substrates by high-rate cathodic sputtering, as well as sputtering cathode for such apparatus
DE3149910A1 (de) * 1981-12-16 1983-06-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur kathodenzerstaeubung von mindestens zwei verschiedenen materialien
CH646459A5 (de) * 1982-03-22 1984-11-30 Balzers Hochvakuum Rechteckige targetplatte fuer kathodenzerstaeubungsanlagen.
US4437966A (en) * 1982-09-30 1984-03-20 Gte Products Corporation Sputtering cathode apparatus
US4569745A (en) * 1982-10-05 1986-02-11 Fujitsu Limited Sputtering apparatus
CA1184880A (en) * 1982-11-18 1985-04-02 Kovilvila Ramachandran Sputtering apparatus and method
JPS59200761A (ja) * 1983-04-28 1984-11-14 Toshiba Corp スパツタリングタ−ゲツト支持装置
US4500409A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Magnetron sputter coating source for both magnetic and non magnetic target materials
JPS6086272A (ja) * 1983-10-18 1985-05-15 Anelva Corp スパツタ装置
US4600489A (en) * 1984-01-19 1986-07-15 Vac-Tec Systems, Inc. Method and apparatus for evaporation arc stabilization for non-permeable targets utilizing permeable stop ring
CH665057A5 (de) * 1984-07-20 1988-04-15 Balzers Hochvakuum Targetplatte fuer kathodenzerstaeubung.
US4631106A (en) * 1984-09-19 1986-12-23 Hitachi, Ltd. Plasma processor
FR2573441B1 (fr) * 1984-11-19 1987-08-07 Cit Alcatel Cathode-cible pour depot, par pulverisation, d'un materiau composite sur un substrat
CH664303A5 (de) * 1985-04-03 1988-02-29 Balzers Hochvakuum Haltevorrichtung fuer targets fuer kathodenzerstaeubung.

Also Published As

Publication number Publication date
EP0242826A2 (de) 1987-10-28
DE3613018A1 (de) 1987-10-22
EP0242826A3 (en) 1989-12-13
DE3787992D1 (de) 1993-12-09
US4826584A (en) 1989-05-02
EP0242826B1 (de) 1993-11-03
ATE96941T1 (de) 1993-11-15

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