ES2054270T3 - Revestimientos ceramicos, procedimientos de revestir sustratos y los sustratos asi obtenidos. - Google Patents
Revestimientos ceramicos, procedimientos de revestir sustratos y los sustratos asi obtenidos.Info
- Publication number
- ES2054270T3 ES2054270T3 ES90312555T ES90312555T ES2054270T3 ES 2054270 T3 ES2054270 T3 ES 2054270T3 ES 90312555 T ES90312555 T ES 90312555T ES 90312555 T ES90312555 T ES 90312555T ES 2054270 T3 ES2054270 T3 ES 2054270T3
- Authority
- ES
- Spain
- Prior art keywords
- ceramic
- layers
- aluminum nitride
- substrates
- substrate coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title 2
- 238000005524 ceramic coating Methods 0.000 title 1
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 239000000919 ceramic Substances 0.000 abstract 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000011241 protective layer Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- JFIOVJDNOJYLKP-UHFFFAOYSA-N bithionol Chemical compound OC1=C(Cl)C=C(Cl)C=C1SC1=CC(Cl)=CC(Cl)=C1O JFIOVJDNOJYLKP-UHFFFAOYSA-N 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Thermal Sciences (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Laminated Bodies (AREA)
- Chemically Coating (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
REVESTIMIENTOS DE CERAMICA O DE UN MATERIAL SIMILAR, SENCILLOS, DE DOS O MAS CAPAS CON NITRURO DE ALUMINIO COMO UNA DE SUS CAPAS, INCLUYENDO METODOS PARA LA PREPARACION DE LOS MISMOS QUE PRODUCEN CAPAS PROTECTORAS DE BARRERA APLANADORAS, PASIVANTES Y HERMETICAS, EN SUSTRATOS SENSIBLES A LA TEMPERATURA TALES COMO SEMICONDUCTORES Y MECANISMOS ELECTRONICOS. LA CERAMICA O MATERIAL SIMILAR DE NITRURO DE ALUMINIO SE REALIZA APLICANDO UN AMIDO DE ALKILALUMINIO LIQUIDO CON LA FORMULA: (R$_{2} INH$_{2}$)$_{3}$ , DONDE R ES UN GRUPO ALQUILO QUE CONTIENE ENTRE 1 Y 4 ATOMOS DE CARBONO, SENCILLO O DISUELTO EN UN DISOLVENTE ORGANICO. DESPUES SE SECA LA CAPA LIQUIDA, Y SE CALIENTA A UNA TEMPERATURA DE ENTRE 400 Y 1000 GRADOS CENTIGRADOS EN PRESENCIA DE AMONIACO PARA PRODUCIR UNA CAPA PROTECTORA CERAMICA QUE CONTENGA NITRURO DE ALUMINIO.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/438,859 US5183684A (en) | 1989-11-20 | 1989-11-20 | Single and multilayer coatings containing aluminum nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2054270T3 true ES2054270T3 (es) | 1994-08-01 |
Family
ID=23742321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES90312555T Expired - Lifetime ES2054270T3 (es) | 1989-11-20 | 1990-11-19 | Revestimientos ceramicos, procedimientos de revestir sustratos y los sustratos asi obtenidos. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5183684A (es) |
| EP (1) | EP0429272B1 (es) |
| JP (1) | JPH0627354B2 (es) |
| CA (1) | CA2029074A1 (es) |
| DE (1) | DE69007938T2 (es) |
| ES (1) | ES2054270T3 (es) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3724592B2 (ja) * | 1993-07-26 | 2005-12-07 | ハイニックス セミコンダクター アメリカ インコーポレイテッド | 半導体基板の平坦化方法 |
| US5417823A (en) * | 1993-12-17 | 1995-05-23 | Ford Motor Company | Metal-nitrides prepared by photolytic/pyrolytic decomposition of metal-amides |
| SE9500013D0 (sv) * | 1995-01-03 | 1995-01-03 | Abb Research Ltd | Semiconductor device having a passivation layer |
| US5858544A (en) * | 1995-12-15 | 1999-01-12 | Univ Michigan | Spherosiloxane coatings |
| US6313035B1 (en) * | 1996-05-31 | 2001-11-06 | Micron Technology, Inc. | Chemical vapor deposition using organometallic precursors |
| JP3254574B2 (ja) | 1996-08-30 | 2002-02-12 | 東京エレクトロン株式会社 | 塗布膜形成方法及びその装置 |
| US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
| US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
| US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
| US6143855A (en) * | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
| US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
| US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
| DE19904378B4 (de) | 1999-02-03 | 2006-10-05 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Nitrid-Einkristallen |
| US6352944B1 (en) * | 1999-02-10 | 2002-03-05 | Micron Technology, Inc. | Method of depositing an aluminum nitride comprising layer over a semiconductor substrate |
| US6440550B1 (en) * | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
| US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
| US7622322B2 (en) * | 2001-03-23 | 2009-11-24 | Cornell Research Foundation, Inc. | Method of forming an AlN coated heterojunction field effect transistor |
| US7722929B2 (en) * | 2005-08-18 | 2010-05-25 | Corning Incorporated | Sealing technique for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device |
| US20070040501A1 (en) | 2005-08-18 | 2007-02-22 | Aitken Bruce G | Method for inhibiting oxygen and moisture degradation of a device and the resulting device |
| US7829147B2 (en) * | 2005-08-18 | 2010-11-09 | Corning Incorporated | Hermetically sealing a device without a heat treating step and the resulting hermetically sealed device |
| US7644512B1 (en) * | 2006-01-18 | 2010-01-12 | Akrion, Inc. | Systems and methods for drying a rotating substrate |
| US7656010B2 (en) * | 2006-09-20 | 2010-02-02 | Panasonic Corporation | Semiconductor device |
| US8115326B2 (en) * | 2006-11-30 | 2012-02-14 | Corning Incorporated | Flexible substrates having a thin-film barrier |
| US20090324825A1 (en) * | 2008-05-30 | 2009-12-31 | Evenson Carl R | Method for Depositing an Aluminum Nitride Coating onto Solid Substrates |
| US7799679B2 (en) * | 2008-06-24 | 2010-09-21 | Intel Corporation | Liquid phase molecular self-assembly for barrier deposition and structures formed thereby |
| FR2997708B1 (fr) * | 2012-11-06 | 2015-04-17 | Seb Sa | Semelle de fer a repasser comprenant un revetement de protection en ceramique non oxyde ou au moins partiellement non oxyde |
| CN115261660B (zh) * | 2022-09-30 | 2022-12-20 | 昆明理工大学 | 一种高强高导热铝合金材料的制备方法 |
| CN120989594B (zh) * | 2025-08-18 | 2026-03-24 | 巨力精密设备制造(东莞)有限公司 | 一种半导体设备真空铝腔体表面处理方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3926702A (en) * | 1972-03-29 | 1975-12-16 | Asamura Patent Office | Ceramic structures and process for producing the same |
| US4777060A (en) * | 1986-09-17 | 1988-10-11 | Schwarzkopf Development Corporation | Method for making a composite substrate for electronic semiconductor parts |
| US4756977A (en) * | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
| US4753855A (en) * | 1986-12-04 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from metal oxides for protection of electronic devices |
| US4833103A (en) * | 1987-06-16 | 1989-05-23 | Eastman Kodak Company | Process for depositing a III-V compound layer on a substrate |
-
1989
- 1989-11-20 US US07/438,859 patent/US5183684A/en not_active Expired - Fee Related
-
1990
- 1990-10-31 CA CA002029074A patent/CA2029074A1/en not_active Abandoned
- 1990-11-19 DE DE69007938T patent/DE69007938T2/de not_active Expired - Fee Related
- 1990-11-19 ES ES90312555T patent/ES2054270T3/es not_active Expired - Lifetime
- 1990-11-19 EP EP90312555A patent/EP0429272B1/en not_active Expired - Lifetime
- 1990-11-20 JP JP2312974A patent/JPH0627354B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA2029074A1 (en) | 1991-05-21 |
| DE69007938T2 (de) | 1994-10-20 |
| EP0429272B1 (en) | 1994-04-06 |
| EP0429272A3 (en) | 1991-07-17 |
| JPH03180335A (ja) | 1991-08-06 |
| DE69007938D1 (de) | 1994-05-11 |
| JPH0627354B2 (ja) | 1994-04-13 |
| US5183684A (en) | 1993-02-02 |
| EP0429272A2 (en) | 1991-05-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG2A | Definitive protection |
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