ES2067381A1 - Celula de efusion de fosforo para epitaxia de haces moleculares. - Google Patents

Celula de efusion de fosforo para epitaxia de haces moleculares.

Info

Publication number
ES2067381A1
ES2067381A1 ES09300063A ES9300063A ES2067381A1 ES 2067381 A1 ES2067381 A1 ES 2067381A1 ES 09300063 A ES09300063 A ES 09300063A ES 9300063 A ES9300063 A ES 9300063A ES 2067381 A1 ES2067381 A1 ES 2067381A1
Authority
ES
Spain
Prior art keywords
phosphorus
vessel
molecular beam
beam epitaxy
effusion cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES09300063A
Other languages
English (en)
Other versions
ES2067381B1 (es
Inventor
Fernandez-Pola Fernand Briones
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consejo Superior de Investigaciones Cientificas CSIC
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Priority to ES09300063A priority Critical patent/ES2067381B1/es
Priority to GB9400573A priority patent/GB9400573D0/en
Priority to US08/181,802 priority patent/US5431735A/en
Priority to GB9400672A priority patent/GB2274468B/en
Priority to US08/403,975 priority patent/US5482892A/en
Publication of ES2067381A1 publication Critical patent/ES2067381A1/es
Application granted granted Critical
Publication of ES2067381B1 publication Critical patent/ES2067381B1/es
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

CELULA DE EFUSION DE FOSFORO PARA EPITAXIA DE HACES MOLECULARES. CONSISTE EN UN RECIPIENTE, DONDE SE PRODUCEN POR SUBLIMACION DE FOSFORO ROJO LOS VAPORES DE ESTE ELEMENTO. CERRADO MEDIANTE UNA VALVULA ESTANCA AL VACIO QUE REGULA SU FLUJO. EN EL RECIPIENTE EXISTEN DOS ZONAS CON TEMPERATURAS DIFERENTES, UNA DE SUBLIMACION DE FOSFORO ROJO Y OTRA DE CONDENSACION Y REEVAPORACION DE FOSFORO BLANCO, ESTANDO AMBAS ZONAS AISLADAS TERMICAMENTE MEDIANTE PANTALLAS REFLECTORAS QUE EVITAN QUE LA TEMPERATURA DE LA RESISTENCIA DE CALEFACCION TENGA QUE ALCANZAR TEMPERATURAS SUPERIORES A LOS 350GC. LA VALVULA, CUYO CIERRE INTERMITENTE REGULA LA EFUSION DE VAPORES DE FOSFORO, SE ENCUENTRA A UNA TEMPERATURA LIGERAMENTE SUPERIOR A LA DE LA ZONA TERMOSTATIZADA DE CONDENSACION-REEVAPORACION DE FOSFORO BLANCO ES DE APLICACION EN LA FABRICACION DE ESTRUCTURAS SEMICONDUCTORAS.
ES09300063A 1993-01-14 1993-01-14 Celula de efusion de fosforo para epitaxia de haces moleculares. Expired - Fee Related ES2067381B1 (es)

Priority Applications (5)

Application Number Priority Date Filing Date Title
ES09300063A ES2067381B1 (es) 1993-01-14 1993-01-14 Celula de efusion de fosforo para epitaxia de haces moleculares.
GB9400573A GB9400573D0 (en) 1993-01-14 1994-01-13 Phosphorus effusion cell for molecular beam epitaxy
US08/181,802 US5431735A (en) 1993-01-14 1994-01-14 Phosphorus effusion cell for molecular beam epitaxy
GB9400672A GB2274468B (en) 1993-01-14 1994-01-14 Phosphorous effusion apparatus and method for molecular beam epitaxy
US08/403,975 US5482892A (en) 1993-01-14 1995-03-15 Method of producing white phosphorus for molecular beam epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES09300063A ES2067381B1 (es) 1993-01-14 1993-01-14 Celula de efusion de fosforo para epitaxia de haces moleculares.

Publications (2)

Publication Number Publication Date
ES2067381A1 true ES2067381A1 (es) 1995-03-16
ES2067381B1 ES2067381B1 (es) 1995-10-16

Family

ID=8280463

Family Applications (1)

Application Number Title Priority Date Filing Date
ES09300063A Expired - Fee Related ES2067381B1 (es) 1993-01-14 1993-01-14 Celula de efusion de fosforo para epitaxia de haces moleculares.

Country Status (3)

Country Link
US (2) US5431735A (es)
ES (1) ES2067381B1 (es)
GB (1) GB9400573D0 (es)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014170503A1 (en) 2013-04-19 2014-10-23 Nano4Energy Slne Pulsed valve cracker effusion cell
WO2014170697A1 (en) 2013-04-19 2014-10-23 Gencoa Ltd Cracker valve control

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6030458A (en) * 1997-02-14 2000-02-29 Chorus Corporation Phosphorus effusion source
US6551405B1 (en) 2000-09-22 2003-04-22 The Board Of Trustees Of The University Of Arkansas Tool and method for in situ vapor phase deposition source material reloading and maintenance
FR2823228B1 (fr) * 2001-04-04 2003-06-13 Addon Reservoir pour installation d'epitaxie et installation comprenant un tel reservoir
US20030141176A1 (en) * 2002-01-25 2003-07-31 Esa Supponen Cracker apparatus
EP1491653A3 (en) * 2003-06-13 2005-06-15 Pioneer Corporation Evaporative deposition methods and apparatus
EP2369035B9 (en) * 2003-08-04 2014-05-21 LG Display Co., Ltd. Evaporation source
CN100476044C (zh) * 2004-06-30 2009-04-08 Dca器械有限公司 磷喷射室装置和生产分子磷的方法
JP4442558B2 (ja) * 2005-01-06 2010-03-31 三星モバイルディスプレイ株式會社 蒸発源の加熱制御方法，蒸発源の冷却制御方法および蒸発源の制御方法
FI118803B (fi) * 2005-04-22 2008-03-31 Beneq Oy Lähde, järjestely lähteen asentamiseksi sekä menetelmä lähteen asentamiseksi ja poistamiseksi
KR101263005B1 (ko) * 2006-12-19 2013-05-08 비코 인스트루먼츠 인코포레이티드 증착 장치 및 방법
FR2956412B1 (fr) * 2010-02-16 2012-04-06 Astron Fiamm Safety Vanne d'obturation a volume constant d'une source de depot en phase vapeur
WO2012012376A1 (en) * 2010-07-22 2012-01-26 First Solar, Inc Deposition system
TWI737718B (zh) * 2016-04-25 2021-09-01 美商創新先進材料股份有限公司 含有瀉流源的沉積系統及相關方法
FR3080947B1 (fr) 2018-05-02 2021-02-19 Centre Nat Rech Scient Microscope electronique en transmission equipe d'au moins une source de jet de matiere balistique
CN222961541U (zh) * 2024-08-07 2025-06-10 费勉仪器科技（上海）有限公司 用于磷裂解源的控温装置、磷裂解源以及真空处理系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0132322A2 (en) * 1983-06-29 1985-01-30 Stauffer Chemical Company Thermal crackers for forming pnictide films in high vacuum processes
US5041719A (en) * 1990-06-01 1991-08-20 General Electric Company Two-zone electrical furnace for molecular beam epitaxial apparatus
US5156815A (en) * 1988-09-08 1992-10-20 Board Of Regents, The University Of Texas System Sublimating and cracking apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4618345A (en) * 1984-02-17 1986-10-21 Stauffer Chemical Company Method of preparing high purity white phosphorus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0132322A2 (en) * 1983-06-29 1985-01-30 Stauffer Chemical Company Thermal crackers for forming pnictide films in high vacuum processes
US5156815A (en) * 1988-09-08 1992-10-20 Board Of Regents, The University Of Texas System Sublimating and cracking apparatus
US5041719A (en) * 1990-06-01 1991-08-20 General Electric Company Two-zone electrical furnace for molecular beam epitaxial apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014170503A1 (en) 2013-04-19 2014-10-23 Nano4Energy Slne Pulsed valve cracker effusion cell
WO2014170697A1 (en) 2013-04-19 2014-10-23 Gencoa Ltd Cracker valve control

Also Published As

Publication number Publication date
US5482892A (en) 1996-01-09
GB9400573D0 (en) 1994-03-09
ES2067381B1 (es) 1995-10-16
US5431735A (en) 1995-07-11

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Effective date: 20180806