ES2074892T3 - Circuito de regulacion de tension de programacion, para memorias programables. - Google Patents

Circuito de regulacion de tension de programacion, para memorias programables.

Info

Publication number
ES2074892T3
ES2074892T3 ES92919647T ES92919647T ES2074892T3 ES 2074892 T3 ES2074892 T3 ES 2074892T3 ES 92919647 T ES92919647 T ES 92919647T ES 92919647 T ES92919647 T ES 92919647T ES 2074892 T3 ES2074892 T3 ES 2074892T3
Authority
ES
Spain
Prior art keywords
voltage
vpp
regulator
circuit
programming voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92919647T
Other languages
English (en)
Inventor
Jacek Kowalski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gemplus SA
Original Assignee
Gemplus Card International SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gemplus Card International SA filed Critical Gemplus Card International SA
Application granted granted Critical
Publication of ES2074892T3 publication Critical patent/ES2074892T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)

Abstract

LA INVENCION CONCIERNE A LOS CIRCUITOS PARA PRODUCIR UNA TENSION VPP A PARTIR DE UNA ALIMENTACION MAS PEQUEÑA VCC. TALES CIRCUITOS SON UTILES POR EJEMPLO PARA PRODUCIR LA TENSION DE PROGRAMACION DE LAS CELDILLAS DE UNA MEMORIA ELECTRICAMENTE PROGRAMABLE. SEGUN LA INVENCION, EL CIRCUITO INCLUYE UNA BOMBA DE CARGA (PMP), UN REGULADOR (REG) PARA INTERRUMPIR EL FUNCIONAMIENTO DE LA BOMBA DE CARGA CUANDO LA TENSION VPP SOBREPASA A UNA TENSION PREDETERMINADA (VPPO), Y ADEMAS LOS ELEMENTOS SIGUIENTES: UN MEDIO (T1) PARA INTERRUMPIR EL CONSUMO DE CORRIENTE DEL REGULADOR CUANDO EL FUNCIONAMIENTO DE LA BOMBA DE CARGA ES INTERRUMPIDO; Y UN CIRCUITO DE CONTROL (CTRL) PARA VIGILAR EN TAL CASO LA TENSION VPP Y VERIFICAR QUE NO DESCIENDA MAS DE UN PEQUEÑO VALOR DV POR DEBAJO DE VPPO. ESTE CIRCUITO VUELVE A PONER EN MARCHA A LA VEZ LA BOMBA DE CARGA Y LA ALIMENTACION DE CORRIENTE DEL REGULADOR. SE PUEDE ASI REDUCIR CONSIDERABLEMENTE EL CONSUMO DE CORRIENTE DEL CIRCUITO DE PRODUCCION DE VPP.
ES92919647T 1991-09-05 1992-08-31 Circuito de regulacion de tension de programacion, para memorias programables. Expired - Lifetime ES2074892T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9111008A FR2681180B1 (fr) 1991-09-05 1991-09-05 Circuit de regulation de tension de programmation, pour memoires programmables.

Publications (1)

Publication Number Publication Date
ES2074892T3 true ES2074892T3 (es) 1995-09-16

Family

ID=9416676

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92919647T Expired - Lifetime ES2074892T3 (es) 1991-09-05 1992-08-31 Circuito de regulacion de tension de programacion, para memorias programables.

Country Status (7)

Country Link
US (1) US5444412A (es)
EP (1) EP0603285B1 (es)
JP (1) JP3256732B2 (es)
DE (1) DE69202340T2 (es)
ES (1) ES2074892T3 (es)
FR (1) FR2681180B1 (es)
WO (1) WO1993005513A1 (es)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2703501B1 (fr) * 1993-04-01 1995-05-19 Gemplus Card Int Circuit intégré pour carte à mémoire et procédé de décomptage d'unités dans une carte à mémoire.
FR2703526B1 (fr) * 1993-04-02 1995-05-19 Gemplus Card Int Circuit de déclenchement automatique.
FR2705810B1 (fr) * 1993-05-26 1995-06-30 Gemplus Card Int Puce de carte à puce munie d'un moyen de limitation du nombre d'authentifications.
FR2719135B1 (fr) * 1994-04-21 1996-06-28 Sgs Thomson Microelectronics Circuit de limitation de tension avec comparateur à hystérésis.
US5625305A (en) * 1994-10-20 1997-04-29 Acer Incorporated Load detection apparatus
DE69514791T2 (de) * 1995-07-24 2000-07-20 Stmicroelectronics S.R.L., Agrate Brianza Flash-EEPROM mit onchip-Löschung-Source-Spannungsgenerator
FR2739737B1 (fr) * 1995-10-09 1997-11-21 Inside Technologies Perfectionnements aux cartes a memoire
FR2739706B1 (fr) * 1995-10-09 1997-11-21 Inside Technologies Perfectionnements aux cartes a memoire
US5596532A (en) * 1995-10-18 1997-01-21 Sandisk Corporation Flash EEPROM self-adaptive voltage generation circuit operative within a continuous voltage source range
EP0782193A1 (en) * 1995-12-15 1997-07-02 Lucent Technologies Inc. Adaptive resistor trimming circuit
EP0782149B1 (en) * 1995-12-29 2003-05-28 STMicroelectronics S.r.l. Device for generating and regulating a gate voltage in a non-volatile memory
EP1260989A3 (en) 1995-12-29 2005-11-30 STMicroelectronics S.r.l. Method to prevent disturbances during the erasing phase in a non-volatile memory device
US5889721A (en) * 1997-08-21 1999-03-30 Integrated Silicon Solution, Inc. Method and apparatus for operating functions relating to memory and/or applications that employ memory in accordance with available power
DE69719188T2 (de) * 1997-11-05 2003-12-04 Stmicroelectronics S.R.L., Agrate Brianza Hochspannungsregelungsschaltung und entsprechendes Spannungsregelungsverfahren
JP3829054B2 (ja) * 1999-12-10 2006-10-04 株式会社東芝 半導体集積回路
KR100332114B1 (ko) * 1999-12-27 2002-04-10 박종섭 플래쉬 메모리 소자의 바이어스 레벨 생성회로
DE60028030T2 (de) 2000-08-22 2006-12-14 Stmicroelectronics S.R.L., Agrate Brianza Hocheffiziente elektronische Schaltung zur Erzeugung und Regelung einer Versorgungsspannung
US7057866B2 (en) * 2001-08-14 2006-06-06 International Business Machines Corp. System and method for disconnecting a portion of an integrated circuit
WO2006062645A2 (en) * 2004-12-08 2006-06-15 Atmel Corporation Power regulation scheme for a high voltage output in integrated circuit devices
FR2878986B1 (fr) * 2004-12-08 2007-04-27 Atmel Corp Principe de regulation de puissance d'une sortie a haute tension dans des dispositifs de circuits integres
CN100382418C (zh) * 2005-04-05 2008-04-16 矽创电子股份有限公司 一种可程控调整输出电压的倍增电路
US7199645B2 (en) * 2005-05-20 2007-04-03 Sitronix Technology Corp. Circuit of voltage multiplier with programmable output
US7200066B2 (en) * 2005-07-18 2007-04-03 Dialog Semiconductor Manufacturing Ltd. Accurate power supply system for flash-memory including on-chip supply voltage regulator, reference voltage generation, power-on reset, and supply voltage monitor
US8316158B1 (en) 2007-03-12 2012-11-20 Cypress Semiconductor Corporation Configuration of programmable device using a DMA controller
CN101632984B (zh) * 2008-07-24 2014-09-17 Ge医疗系统环球技术有限公司 电压产生电路及超声波诊断装置
US7964992B2 (en) 2008-09-15 2011-06-21 Silicon Laboratories Inc. Circuit device including multiple parameterized power regulators
JP6027330B2 (ja) * 2012-03-30 2016-11-16 ラピスセミコンダクタ株式会社 電圧発生回路、半導体メモリ、及び電圧制御方法
US9275691B2 (en) * 2014-03-21 2016-03-01 Elite Semiconductor Memory Technology Inc. Programmable voltage generator for nonvolatile memory device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4533846A (en) * 1979-01-24 1985-08-06 Xicor, Inc. Integrated circuit high voltage clamping systems
JPS60225917A (ja) * 1984-04-25 1985-11-11 Nec Corp 定電圧発生回路
JPS60225918A (ja) * 1984-04-25 1985-11-11 Nec Corp 直流安定化電源
JPH0618249B2 (ja) * 1984-10-17 1994-03-09 富士通株式会社 半導体集積回路
JPH0827662B2 (ja) * 1987-06-12 1996-03-21 沖電気工業株式会社 比較電圧発生回路及びそれを用いた電圧検出回路
JPH02215154A (ja) * 1989-02-16 1990-08-28 Toshiba Corp 電圧制御回路
US5175706A (en) * 1989-12-07 1992-12-29 Sgs-Thomson Microelectronics S.A. Programming voltage generator circuit for programmable memory
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control
US5291446A (en) * 1992-10-22 1994-03-01 Advanced Micro Devices, Inc. VPP power supply having a regulator circuit for controlling a regulated positive potential

Also Published As

Publication number Publication date
WO1993005513A1 (fr) 1993-03-18
EP0603285B1 (fr) 1995-05-03
FR2681180B1 (fr) 1996-10-25
DE69202340T2 (de) 1996-01-25
JP3256732B2 (ja) 2002-02-12
US5444412A (en) 1995-08-22
DE69202340D1 (de) 1995-06-08
JPH06510390A (ja) 1994-11-17
FR2681180A1 (fr) 1993-03-12
EP0603285A1 (fr) 1994-06-29

Similar Documents

Publication Publication Date Title
ES2074892T3 (es) Circuito de regulacion de tension de programacion, para memorias programables.
US20110316509A1 (en) Start-up circuit and method thereof
RU98119733A (ru) Схемное устройство для питания электронной цепи нагрузки
CN101071977A (zh) 低电压误动作防止电路、方法、电源电路和电子设备
KR20040003339A (ko) 반도체 메모리 장치의 기준전압 선택회로 및 그 방법
US7532061B2 (en) Charge-pump type, voltage-boosting device with reduced ripple, in particular for non-volatile flash memories
US20170310204A1 (en) Bandgap reference circuit and dcdc converter having the same
CN110703838B (zh) 具有可调输出电压的稳压器
DE69225894D1 (de) Schaltnetzteil mit geringem leistungsverbrauch und verfahren
JP4485637B2 (ja) 半導体装置及び半導体装置の内部電源生成方法
KR100660638B1 (ko) 고전압 발생 회로 및 이를 구비하는 반도체 장치
Holovatyy et al. Development of AC voltage stabilizer with microcontroller-based control system
US20130107642A1 (en) Voltage generator of nonvolatile memory device
US20200126598A1 (en) Dynamic power control system for memory device and memory device using the same
KR19990002891A (ko) 플래쉬 메모리 장치
CN210927459U (zh) 一种滞回电路
US20080042629A1 (en) Current source
KR101867509B1 (ko) 비휘발성 메모리 장치
CN113364276A (zh) 一种电荷泵放电方法、电路、系统、电子设备及存储介质
JP6311108B2 (ja) 制御装置の電源回路
ES2886210T3 (es) Dispositivo para eliminar la pendiente en la tensión de salida del convertidor de potencia del conmutador en el módulo de plc
CN223297376U (zh) 电池供电电路及灯具
CN118677253B (zh) 一种降低输入电源对输出电压影响的电路结构
CN211508906U (zh) 带开关带限流输出的稳压电路
CN114740934B (zh) 一种大驱动均衡式ldo电路

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 603285

Country of ref document: ES