ES2085849T3 - Estructuras semiconductoras y metodo para fabricar estructuras semiconductoras. - Google Patents

Estructuras semiconductoras y metodo para fabricar estructuras semiconductoras.

Info

Publication number
ES2085849T3
ES2085849T3 ES87308402T ES87308402T ES2085849T3 ES 2085849 T3 ES2085849 T3 ES 2085849T3 ES 87308402 T ES87308402 T ES 87308402T ES 87308402 T ES87308402 T ES 87308402T ES 2085849 T3 ES2085849 T3 ES 2085849T3
Authority
ES
Spain
Prior art keywords
semiconductor structures
plateau
pin
manufacturing
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES87308402T
Other languages
English (en)
Inventor
David Martin Cooper
Ian Francis Lealman
Andrew William Nelson
William John Devlin
Simon Cole
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Telecommunications PLC
Original Assignee
British Telecommunications PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Application granted granted Critical
Publication of ES2085849T3 publication Critical patent/ES2085849T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
  • Led Devices (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Semiconductor Memories (AREA)

Abstract

EN UN LASER DE HETEROESTRUCTURA DE SEMICONDUCTOR ENTERRADO, CON UNA MESETA (2,3,4) Y CAPAS DE CONFINAMIENTO (5,6,7) SOBRE UN SUBSTRATO (12), AL MENOS LA CAPA DE CONFINAMIENTO INFERIOR (5,6,7) ES PLANAR A LA MESETA. ESTO SE CONSIGUE MEDIANTE EL CRECIMIENTO MOVPE DE PIN CONTRA LAS SUPERFICIES LATERALES DE LA MESETA (2,3,4), DEFINIDAS POR DISTINTOS PLANOS CRISTALOGRAFICOS DEL MATERIAL DE LA MESETA. SE UTILIZAN EN PARTICULAR (111) PLANOS B DE PIN. EL LASER SE UTILIZA PRINCIPALMENTE EN EL CAMPO DE LAS COMUNICACIONES OPTICAS.
ES87308402T 1986-09-22 1987-09-22 Estructuras semiconductoras y metodo para fabricar estructuras semiconductoras. Expired - Lifetime ES2085849T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB868622767A GB8622767D0 (en) 1986-09-22 1986-09-22 Semiconductor structures

Publications (1)

Publication Number Publication Date
ES2085849T3 true ES2085849T3 (es) 1996-06-16

Family

ID=10604579

Family Applications (1)

Application Number Title Priority Date Filing Date
ES87308402T Expired - Lifetime ES2085849T3 (es) 1986-09-22 1987-09-22 Estructuras semiconductoras y metodo para fabricar estructuras semiconductoras.

Country Status (10)

Country Link
US (1) US5242857A (es)
EP (1) EP0261943B1 (es)
JP (1) JP2708165B2 (es)
AT (1) ATE137360T1 (es)
CA (1) CA1332341C (es)
DE (1) DE3751782T2 (es)
ES (1) ES2085849T3 (es)
GB (1) GB8622767D0 (es)
SG (1) SG47931A1 (es)
WO (1) WO1988002187A1 (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831658B2 (ja) * 1988-05-11 1996-03-27 三菱化学株式会社 半導体レーザ及びその製造方法
KR910008439B1 (ko) * 1989-04-06 1991-10-15 재단법인 한국전자통신연구소 매립형 레이저 다이오드의 제조방법
NL8902292A (nl) * 1989-09-14 1991-04-02 Philips Nv Werkwijze voor het vervaardigen van een een mesa bevattende halfgeleiderinrichting.
FR2673330B1 (fr) * 1991-02-26 1997-06-20 France Telecom Procede de realisation d'un laser a semiconducteur a ruban enterre, utilisant une gravure seche pour former ce ruban, et laser obtenu par ce procede.
JP3108183B2 (ja) * 1992-02-10 2000-11-13 古河電気工業株式会社 半導体レーザ素子とその製造方法
US5568501A (en) * 1993-11-01 1996-10-22 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and method for producing the same
FR2715506B1 (fr) * 1994-01-21 1996-03-29 Alcatel Nv Procédé de remplacement d'une partie d'une première structure semi-conductrice par une autre structure semi-conductrice comportant une couche épitaxiale de composition différente.
TW347597B (en) * 1994-01-31 1998-12-11 Mitsubishi Chem Corp Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode
US6036769A (en) * 1994-06-29 2000-03-14 British Telecommunications Public Limited Company Preparation of semiconductor substrates
DE4427840A1 (de) * 1994-07-28 1996-02-01 Osa Elektronik Gmbh Verfahren zur Effizienzerhöhung von A¶I¶¶I¶¶I¶B¶V¶ - Halbleiter-Chips
KR0146714B1 (ko) * 1994-08-08 1998-11-02 양승택 평면 매립형 레이저 다이오드의 제조방법
JP3765987B2 (ja) * 2001-02-15 2006-04-12 ユーディナデバイス株式会社 半導体装置の製造方法
DE10305079B4 (de) * 2002-11-27 2005-04-28 Vertilas Gmbh Verfahren zur Herstellung eines vergrabenen Tunnelkontakts in einem oberflächenemittierenden Halbleiterlaser sowie oberflächenemittierender Halbleiterlaser
JP5353113B2 (ja) 2008-01-29 2013-11-27 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
DE102018110187A1 (de) * 2018-04-27 2019-10-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper, Anordnung von einer Vielzahl von optoelektronischen Halbleiterkörpern und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
JP7330128B2 (ja) * 2020-04-02 2023-08-21 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置
JP7421989B2 (ja) * 2020-04-02 2024-01-25 浜松ホトニクス株式会社 量子カスケードレーザ素子及び量子カスケードレーザ装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
JPS56157082A (en) * 1980-05-09 1981-12-04 Hitachi Ltd Semiconductor laser device and manufacture
US4371966A (en) * 1980-11-06 1983-02-01 Xerox Corporation Heterostructure lasers with combination active strip and passive waveguide strip
GB2114808B (en) * 1981-12-01 1985-10-09 Standard Telephones Cables Ltd Semiconductor laser manufacture
JPS58127392A (ja) * 1982-01-25 1983-07-29 Hitachi Ltd 半導体レ−ザ−素子の製造方法
GB2115608B (en) * 1982-02-24 1985-10-30 Plessey Co Plc Semi-conductor lasers
US4509996A (en) * 1982-11-05 1985-04-09 International Standard Electric Corporation Injection laser manufacture
JPS59181589A (ja) * 1983-03-31 1984-10-16 Fujitsu Ltd 半導体レ−ザの製造方法
JPS60154689A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 発光素子およびこれを用いた光通信装置
EP0157555B1 (en) * 1984-03-27 1990-10-03 Matsushita Electric Industrial Co., Ltd. A semiconductor laser and a method of producing the same
US4595454A (en) * 1984-06-15 1986-06-17 At&T Bell Laboratories Fabrication of grooved semiconductor devices
US4660208A (en) * 1984-06-15 1987-04-21 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement
US4888624A (en) * 1984-06-15 1989-12-19 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement
FR2574601B1 (fr) * 1984-12-11 1987-07-17 Menigaux Louis Procede de fabrication d'un laser a semi-conducteur a ruban enterre
JP2716693B2 (ja) * 1985-02-08 1998-02-18 ソニー株式会社 半導体レーザー
GB8516853D0 (en) * 1985-07-03 1985-08-07 British Telecomm Manufacture of semiconductor structures
JPS62245691A (ja) * 1986-04-17 1987-10-26 Nec Corp 半導体レ−ザの製造方法
US4788159A (en) * 1986-09-18 1988-11-29 Eastman Kodak Company Process for forming a positive index waveguide
US4701995A (en) * 1986-10-29 1987-10-27 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making a nonplanar buried-heterostructure distributed-feedback laser
US4774554A (en) * 1986-12-16 1988-09-27 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Ti-doped Group III-V epitaxial layer
JPH0646669B2 (ja) * 1987-07-28 1994-06-15 日本電気株式会社 半導体レ−ザ及びその製造方法

Also Published As

Publication number Publication date
US5242857A (en) 1993-09-07
EP0261943A1 (en) 1988-03-30
EP0261943B1 (en) 1996-04-24
CA1332341C (en) 1994-10-11
JP2708165B2 (ja) 1998-02-04
ATE137360T1 (de) 1996-05-15
DE3751782T2 (de) 1996-09-05
SG47931A1 (en) 1998-04-17
WO1988002187A1 (en) 1988-03-24
JPH01501586A (ja) 1989-06-01
DE3751782D1 (de) 1996-05-30
GB8622767D0 (en) 1986-10-29

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