ES2113464T3 - Procedimiento y aparato de plasma plano electromagneticamente acoplado, para el ataque de oxidos. - Google Patents

Procedimiento y aparato de plasma plano electromagneticamente acoplado, para el ataque de oxidos.

Info

Publication number
ES2113464T3
ES2113464T3 ES93119391T ES93119391T ES2113464T3 ES 2113464 T3 ES2113464 T3 ES 2113464T3 ES 93119391 T ES93119391 T ES 93119391T ES 93119391 T ES93119391 T ES 93119391T ES 2113464 T3 ES2113464 T3 ES 2113464T3
Authority
ES
Spain
Prior art keywords
attack
electromagnetically coupled
fluor
camera
oxides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93119391T
Other languages
English (en)
Inventor
Kenneth S Collins
Jeffrey Marks
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25530259&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES2113464(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ES2113464T3 publication Critical patent/ES2113464T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F29/00—Variable transformers or inductances not covered by group H01F21/00
    • H01F29/14—Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias
    • H01F2029/143—Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias with control winding for generating magnetic bias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3345—Problems associated with etching anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

SE DESCRIBE UN APARATO (10) PARA LA PRODUCCION DE UN PLASMA PLANO ACOPLADO ELECTROMAGNETICAMENTE QUE CONSTA DE UNA CAMARA (12) QUE TIENE UN BLINDAJE DIELECTRICO (18) EN UNA PARED DE LA MISMA Y UNA BOBINA PLANA (20) COLOCADA FUERA DE DICHA CAMARA (12) ACOPLADA A UNA FUENTE DE RADIOFRECUENCIA (30), CON LO QUE UN DEPURADOR (26) DE FLUOR SE MONTA O AÑADE A DICHA CAMARA (12). CUANDO SE ATACA CON UN PLASMA DE UN GAS DE FLUOHIDROCARBURO UN OXIDO DE SILICIO, EL DEPURADOR DE FLUOR (26) REDUCE LOS RADICALES LIBRES DE FLUOR, LO QUE MEJORA LA SELECTIVIDAD Y ANISOTROPIA DEL ATAQUE Y MEJORA LA VELOCIDAD DEL ATAQUE AL TIEMPO QUE REDUCE LA FORMACION DE PARTICULAS.
ES93119391T 1992-12-01 1993-12-01 Procedimiento y aparato de plasma plano electromagneticamente acoplado, para el ataque de oxidos. Expired - Lifetime ES2113464T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US98404592A 1992-12-01 1992-12-01

Publications (1)

Publication Number Publication Date
ES2113464T3 true ES2113464T3 (es) 1998-05-01

Family

ID=25530259

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93119391T Expired - Lifetime ES2113464T3 (es) 1992-12-01 1993-12-01 Procedimiento y aparato de plasma plano electromagneticamente acoplado, para el ataque de oxidos.

Country Status (6)

Country Link
US (1) US6217785B1 (es)
EP (2) EP0802560B1 (es)
JP (1) JP3422540B2 (es)
KR (1) KR100281345B1 (es)
DE (2) DE69317518T2 (es)
ES (1) ES2113464T3 (es)

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US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6036877A (en) * 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6488807B1 (en) 1991-06-27 2002-12-03 Applied Materials, Inc. Magnetic confinement in a plasma reactor having an RF bias electrode
US6090303A (en) * 1991-06-27 2000-07-18 Applied Materials, Inc. Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6514376B1 (en) 1991-06-27 2003-02-04 Applied Materials Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6835523B1 (en) 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US5722668A (en) * 1994-04-29 1998-03-03 Applied Materials, Inc. Protective collar for vacuum seal in a plasma etch reactor
US5580385A (en) * 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
US6156663A (en) * 1995-10-03 2000-12-05 Hitachi, Ltd. Method and apparatus for plasma processing
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US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6036878A (en) 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
DE19606375A1 (de) * 1996-02-21 1997-08-28 Balzers Prozes Systeme Gmbh Plasmaquelle mit eingekoppelten Whistler- oder Helikonwellen
DE19711267A1 (de) * 1996-03-18 1997-10-30 Hyundai Electronics Ind Vorrichtung zur chemischen Dampfabscheidung mit induktiv gekoppeltem Plasma
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
ATE396494T1 (de) * 1996-09-27 2008-06-15 Surface Technology Systems Plc Plasmabearbeitungsgerät
US6534922B2 (en) 1996-09-27 2003-03-18 Surface Technology Systems, Plc Plasma processing apparatus
US6308654B1 (en) 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
US6132551A (en) * 1997-09-20 2000-10-17 Applied Materials, Inc. Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil
US6028285A (en) * 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing
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DE19933842A1 (de) * 1999-07-20 2001-02-01 Bosch Gmbh Robert Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas
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JP5297048B2 (ja) * 2008-01-28 2013-09-25 三菱重工業株式会社 プラズマ処理方法及びプラズマ処理装置
JP5400434B2 (ja) * 2009-03-11 2014-01-29 株式会社イー・エム・ディー プラズマ処理装置
JP4621287B2 (ja) * 2009-03-11 2011-01-26 株式会社イー・エム・ディー プラズマ処理装置
CN112023844A (zh) * 2020-08-12 2020-12-04 陕西科技大学 一种用于材料制备的水热感应加热法及其制备系统
KR102787323B1 (ko) 2020-09-24 2025-03-27 삼성전자주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법

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Also Published As

Publication number Publication date
JPH06283473A (ja) 1994-10-07
US6217785B1 (en) 2001-04-17
EP0601468B1 (en) 1998-03-18
EP0601468A1 (en) 1994-06-15
KR100281345B1 (ko) 2001-03-02
JP3422540B2 (ja) 2003-06-30
DE69317518T2 (de) 1998-10-29
DE69317518D1 (de) 1998-04-23
DE69332176T2 (de) 2003-04-03
EP0802560B1 (en) 2002-07-31
KR940014908A (ko) 1994-07-19
EP0802560A1 (en) 1997-10-22
DE69332176D1 (de) 2002-09-05

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