ES2113902T3 - Sistema de tratamiento exento de aire ambiente. - Google Patents

Sistema de tratamiento exento de aire ambiente.

Info

Publication number
ES2113902T3
ES2113902T3 ES92114087T ES92114087T ES2113902T3 ES 2113902 T3 ES2113902 T3 ES 2113902T3 ES 92114087 T ES92114087 T ES 92114087T ES 92114087 T ES92114087 T ES 92114087T ES 2113902 T3 ES2113902 T3 ES 2113902T3
Authority
ES
Spain
Prior art keywords
container
workpiece
selected gas
diffuser
room
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92114087T
Other languages
English (en)
Inventor
Dennis Francis Brestovansky
Mark Stephen Nowotarski
Walter Plante
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Praxair Technology Inc
Original Assignee
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair Technology Inc filed Critical Praxair Technology Inc
Application granted granted Critical
Publication of ES2113902T3 publication Critical patent/ES2113902T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3411—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H10P72/3412—Batch transfer of wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)
  • Jigs For Machine Tools (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

UN APARATO Y UN METODO PARA PROCESAR UNA PIEZA DE TRABAJO EN UN AMBIENTE SIN AIRE DEL GAS SELECCIONADO. UN RECIPIENTE DE PREPARACION TIENE UNA ABERTURA PARA LA ENTRADA DE LA PIEZA DE TRABAJO Y UN DIFUSOR ORIENTADO PARA EMITIR A TRAVES DE LA ABERTURA DEL RECIPIENTE UN FLUJO LAMINAR EN FORMA DE CORTINA DEL GAS SELECCIONADO QUE ENTRA, PURGA EL RECIPIENTE Y EVITA LA INFILTRACION DE AIRE. SE TRANSPORTA LA PIEZA DE TRABAJO SOBRE SU TRANSPORTADOR AL RECIPIENTE DE PREPARACION EN DONDE SE PURGA EL AIRE Y SE SUBSTITUYE POR EL GAS SELECCIONADO. UN RECIPIENTE DE PROCESO TIENE UN DIFUSOR Y UNA ABERTURA DE ENTRADA PARA PIEZAS DE TRABAJO SIMILARES. SE HACE QUE COINCIDAN LAS ABERTURAS DEL RECIPIENTE DE PREPARACION Y DE PROCESO Y SE INTRODUCE EL TRANSPORTADOR EN EL RECIPIENTE DE PROCESO PARA EL PROCESO DE LA PIEZA DE TRABAJO EN EL AMBIENTE DEL GAS SELECCIONADO SUMINISTRADO POR EL DIFUSOR DEL RECIPIENTE DE PROCESO.
ES92114087T 1991-08-19 1992-08-18 Sistema de tratamiento exento de aire ambiente. Expired - Lifetime ES2113902T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/746,755 US5210959A (en) 1991-08-19 1991-08-19 Ambient-free processing system

Publications (1)

Publication Number Publication Date
ES2113902T3 true ES2113902T3 (es) 1998-05-16

Family

ID=25002201

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92114087T Expired - Lifetime ES2113902T3 (es) 1991-08-19 1992-08-18 Sistema de tratamiento exento de aire ambiente.

Country Status (9)

Country Link
US (1) US5210959A (es)
EP (1) EP0528405B1 (es)
JP (1) JP2681576B2 (es)
KR (1) KR0139620B1 (es)
BR (1) BR9203193A (es)
CA (1) CA2076334C (es)
DE (1) DE69224942T2 (es)
ES (1) ES2113902T3 (es)
MX (1) MX9204763A (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5366409A (en) * 1993-11-22 1994-11-22 Praxair Technology, Inc. Controlling pouring stream and receiver environment
JPH07225079A (ja) * 1994-02-10 1995-08-22 Sony Corp 加熱方法及び半導体装置の製造方法
US5644855A (en) * 1995-04-06 1997-07-08 Air Products And Chemicals, Inc. Cryogenically purged mini environment
US6041515A (en) 1998-01-12 2000-03-28 Life Technologies, Inc. Apparatus for drying solutions containing macromolecules
EP1114799A1 (en) * 2000-01-05 2001-07-11 Lucent Technologies Inc. Process for heat treatment of a shaped article with gaseous reactants
KR20070093153A (ko) * 2003-10-23 2007-09-17 테렌스 콜 마틴 하우징을 덕트 위에 마운팅하기 위한 방법
JP4568108B2 (ja) * 2004-12-24 2010-10-27 パナソニック株式会社 真空薄膜装置
US7184657B1 (en) * 2005-09-17 2007-02-27 Mattson Technology, Inc. Enhanced rapid thermal processing apparatus and method
JP4527670B2 (ja) * 2006-01-25 2010-08-18 東京エレクトロン株式会社 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体
US7877895B2 (en) * 2006-06-26 2011-02-01 Tokyo Electron Limited Substrate processing apparatus
JP4153540B2 (ja) * 2006-09-12 2008-09-24 シャープ株式会社 基板製造装置
ES2345121T3 (es) * 2007-02-02 2010-09-15 Applied Materials, Inc. Camara de proceso, instalacion de recubrimiento en linea y procedimiento para tratar un sustrato.
US7966743B2 (en) * 2007-07-31 2011-06-28 Eastman Kodak Company Micro-structured drying for inkjet printers
JP2017520112A (ja) * 2014-05-15 2017-07-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 粒子除去デバイス、及び粒子除去デバイスを操作する方法
KR102666133B1 (ko) * 2019-01-14 2024-05-17 삼성전자주식회사 초임계 건조 장치 및 그를 이용한 기판 건조방법
KR102673983B1 (ko) * 2019-03-15 2024-06-12 주식회사 케이씨텍 기판 처리 장치
CN112885768B (zh) * 2020-12-30 2023-10-13 华灿光电（浙江）有限公司 刻蚀烘烤设备的外延片载具

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4376225A (en) * 1981-08-05 1983-03-08 Uop Inc. Dehydrogenation process utilizing indirect heat exchange and direct combustion heating
US4436509A (en) * 1982-05-10 1984-03-13 Rca Corporation Controlled environment for diffusion furnace
US4526534A (en) * 1983-06-01 1985-07-02 Quartz Engineering & Materials, Inc. Cantilever diffusion tube apparatus and method
US4696226A (en) * 1986-08-28 1987-09-29 Witmer Warner H Fluid barrier curtain system
IT1205512B (it) * 1986-12-30 1989-03-23 Mauro Poppi Forno per la cottura di materiali ceramici quali piastrelle e simili
DE3707672A1 (de) * 1987-03-10 1988-09-22 Sitesa Sa Epitaxieanlage
US4943235A (en) * 1987-11-27 1990-07-24 Tel Sagami Limited Heat-treating apparatus
US4823680A (en) * 1987-12-07 1989-04-25 Union Carbide Corporation Wide laminar fluid doors
KR970011642B1 (ko) * 1988-03-09 1997-07-12 테루 사가미 가부시끼가이샤 반도체 웨이퍼의 열처리 방법, 열처리 장치 및 열처리용 보우트
US4911638A (en) * 1989-05-18 1990-03-27 Direction Incorporated Controlled diffusion environment capsule and system
US4950156A (en) * 1989-06-28 1990-08-21 Digital Equipment Corporation Inert gas curtain for a thermal processing furnace

Also Published As

Publication number Publication date
DE69224942D1 (de) 1998-05-07
EP0528405A2 (en) 1993-02-24
JP2681576B2 (ja) 1997-11-26
EP0528405B1 (en) 1998-04-01
KR0139620B1 (ko) 1998-07-15
CA2076334A1 (en) 1993-02-20
CA2076334C (en) 1997-03-04
DE69224942T2 (de) 1998-09-10
JPH05286800A (ja) 1993-11-02
MX9204763A (es) 1994-02-28
EP0528405A3 (en) 1995-12-27
BR9203193A (pt) 1993-03-30
US5210959A (en) 1993-05-18

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