ES2118145T3 - Procedimiento para producir compuestos de alquilarsina. - Google Patents
Procedimiento para producir compuestos de alquilarsina.Info
- Publication number
- ES2118145T3 ES2118145T3 ES93101097T ES93101097T ES2118145T3 ES 2118145 T3 ES2118145 T3 ES 2118145T3 ES 93101097 T ES93101097 T ES 93101097T ES 93101097 T ES93101097 T ES 93101097T ES 2118145 T3 ES2118145 T3 ES 2118145T3
- Authority
- ES
- Spain
- Prior art keywords
- alkylarsin
- compounds
- procedure
- producing
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000001875 compounds Chemical class 0.000 title 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 2
- -1 Alkyl arsines Chemical class 0.000 abstract 1
- 239000007848 Bronsted acid Substances 0.000 abstract 1
- 150000001336 alkenes Chemical class 0.000 abstract 1
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 239000003054 catalyst Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 abstract 1
- 230000001706 oxygenating effect Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/66—Arsenic compounds
- C07F9/70—Organo-arsenic compounds
- C07F9/72—Aliphatic compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/582—Recycling of unreacted starting or intermediate materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Catalysts (AREA)
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
Abstract
LAS ARSINAS DE ALQUILO SE PRODUCEN MEDIANTE UNA REACCION DE ARSINA GASEOSA Y LA OLEFINA GASEOSA CORRESPONDIENTE EN CONTACTO CON AL MENOS UN CATALIZADOR DE ACIDO DE BRONSTED. LOS PRODUCTOS ASI PRODUCIDOS SON ARSINAS MONO Y DISUSTITUIDAS, EJ. ARSINAS DE ALQUILO Y DIALQUILO, QUE SUSTANCIALMENTE NO CONTIENEN IMPUREZAS METALICAS O DE OXIGENACION.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/848,505 US5274149A (en) | 1991-07-11 | 1992-03-09 | Process for making alkyl arsine compounds |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2118145T3 true ES2118145T3 (es) | 1998-09-16 |
Family
ID=25303463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES93101097T Expired - Lifetime ES2118145T3 (es) | 1992-03-09 | 1993-01-25 | Procedimiento para producir compuestos de alquilarsina. |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US5274149A (es) |
| EP (1) | EP0560029B1 (es) |
| JP (1) | JP3376565B2 (es) |
| AT (1) | ATE167867T1 (es) |
| CA (1) | CA2091141A1 (es) |
| DE (1) | DE69319358T2 (es) |
| DK (1) | DK0560029T3 (es) |
| ES (1) | ES2118145T3 (es) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5274149A (en) * | 1991-07-11 | 1993-12-28 | American Cyanamid Company | Process for making alkyl arsine compounds |
| US6956127B2 (en) | 2002-01-17 | 2005-10-18 | Shipley Company, L.L.C. | Alkyl group VA metal compounds |
| US8784663B2 (en) * | 2009-11-20 | 2014-07-22 | Nokia Corporation | Trapping nanostructures |
| WO2023235534A1 (en) | 2022-06-02 | 2023-12-07 | Gelest, Inc. | High purity alkyl tin compounds and manufacturing methods thereof |
| CN115181131A (zh) * | 2022-08-11 | 2022-10-14 | 安徽亚格盛电子新材料有限公司 | 一种连续化合成叔丁基砷的方法 |
| KR20250040045A (ko) | 2022-08-12 | 2025-03-21 | 젤리스트 인코퍼레이티드 | 불포화 치환기를 함유하는 고순도 주석 화합물 및 이의 제조 방법 |
| CN115340576A (zh) * | 2022-08-16 | 2022-11-15 | 安徽亚格盛电子新材料有限公司 | 一种高纯叔丁基砷的制备方法 |
| US12606577B2 (en) | 2022-09-28 | 2026-04-21 | Gelest, Inc. | Iodoalkyl tin compounds and preparation methods thereof |
| US12145955B2 (en) | 2022-10-04 | 2024-11-19 | Gelest, Inc. | Cyclic azastannane and cyclic oxostannane compounds and methods for preparation thereof |
| JP7357986B1 (ja) | 2023-05-15 | 2023-10-10 | 硬化クローム工業株式会社 | 高電圧を印加可能な内部電極を有するバッキングロールを用いた静電補助塗布方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE620887A (es) * | 1959-06-18 | |||
| US4368098A (en) * | 1969-10-01 | 1983-01-11 | Rockwell International Corporation | Epitaxial composite and method of making |
| US4404265A (en) * | 1969-10-01 | 1983-09-13 | Rockwell International Corporation | Epitaxial composite and method of making |
| US4734514A (en) * | 1984-10-25 | 1988-03-29 | Morton Thiokol, Inc. | Hydrocarbon-substituted analogs of phosphine and arsine, particularly for metal organic chemical vapor deposition |
| US4857655A (en) * | 1988-01-20 | 1989-08-15 | American Cyanamid Company | Process for making alkyl arsine compounds |
| JPH01260813A (ja) * | 1988-04-11 | 1989-10-18 | Sumitomo Chem Co Ltd | 化合物半導体の気相成長方法 |
| US4900855A (en) * | 1988-12-14 | 1990-02-13 | Cvd Incorporated | Chemical process for obtaining high purification of monoalkylarsines and dialkylarsines and purified mono- and dialkylarsines |
| US5068372A (en) * | 1990-07-16 | 1991-11-26 | Cvd Incorporated | Method for the synthesis of primary arsines |
| US5124278A (en) * | 1990-09-21 | 1992-06-23 | Air Products And Chemicals, Inc. | Amino replacements for arsine, antimony and phosphine |
| US5274149A (en) * | 1991-07-11 | 1993-12-28 | American Cyanamid Company | Process for making alkyl arsine compounds |
-
1992
- 1992-03-09 US US07/848,505 patent/US5274149A/en not_active Expired - Fee Related
-
1993
- 1993-01-25 DE DE69319358T patent/DE69319358T2/de not_active Expired - Fee Related
- 1993-01-25 ES ES93101097T patent/ES2118145T3/es not_active Expired - Lifetime
- 1993-01-25 EP EP93101097A patent/EP0560029B1/en not_active Expired - Lifetime
- 1993-01-25 DK DK93101097T patent/DK0560029T3/da active
- 1993-01-25 AT AT93101097T patent/ATE167867T1/de not_active IP Right Cessation
- 1993-03-05 JP JP06910293A patent/JP3376565B2/ja not_active Expired - Fee Related
- 1993-03-05 CA CA002091141A patent/CA2091141A1/en not_active Abandoned
- 1993-06-04 US US08/071,085 patent/US5415129A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DK0560029T3 (da) | 1998-10-26 |
| DE69319358T2 (de) | 1998-12-17 |
| DE69319358D1 (de) | 1998-08-06 |
| JP3376565B2 (ja) | 2003-02-10 |
| US5415129A (en) | 1995-05-16 |
| EP0560029A1 (en) | 1993-09-15 |
| CA2091141A1 (en) | 1993-09-10 |
| EP0560029B1 (en) | 1998-07-01 |
| US5274149A (en) | 1993-12-28 |
| ATE167867T1 (de) | 1998-07-15 |
| JPH069671A (ja) | 1994-01-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG2A | Definitive protection |
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