ES2125229T3 - Reactor de tratamiento por plasma. - Google Patents

Reactor de tratamiento por plasma.

Info

Publication number
ES2125229T3
ES2125229T3 ES91112917T ES91112917T ES2125229T3 ES 2125229 T3 ES2125229 T3 ES 2125229T3 ES 91112917 T ES91112917 T ES 91112917T ES 91112917 T ES91112917 T ES 91112917T ES 2125229 T3 ES2125229 T3 ES 2125229T3
Authority
ES
Spain
Prior art keywords
plasma
vhf
frequencies
plasma treatment
treatment reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91112917T
Other languages
English (en)
Inventor
Kenneth S Collins
Craig A Roderick
Chan-Lon Yang
David N K Wang
Dan Maydan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ES2125229T3 publication Critical patent/ES2125229T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

SE DESCRIBE UN REACTOR PARA EL PROCESAMIENTO DE PLASMA (10) QUE INCORPORA UNA ESTRUCTURA INTEGRADA DE LINEA DE TRANSMISION COAXIAL (32) QUE EFECTUA UN ACOPLAMIENTO DE LINEA DE TRANSMISION MUY CORTO Y CON POCA PERDIDA DE UNA ENERGIA ELECTRICA DE CA (30) A LA CAMARA DE PLASMA (33) Y ASI PERMITE EL USO EFECTIVO DE FRECUENCIAS VHF/UHF PARA GENERAR UN PLASMA. EL USO DE FRECUENCIAS DE VHF/UHF DENTRO DEL MARGEN DE 50 Y 800 MEGAHERZIOS PROPORCIONA INDICES DE PROCESAMIENTO COMERCIALMENTE VIABLES (CORROSION Y DEPOSICION SEPARADA O SIMULTANEA) Y UNA REDUCCION SUSTANCIAL EN VOLTAJES DE VAINA COMPARADO CON LAS FRECUENCIAS CONVENCIONALES COMO 13.56 MHZ. COMO RESULTADO, LA PROBABILIDAD DE DAÑAR LOS DISPOSITIVOS DE TAMAÑO PEQUEÑO SENSIBLES A LA ELECTRICIDAD QUEDA REDUCIDA.
ES91112917T 1990-07-31 1991-07-31 Reactor de tratamiento por plasma. Expired - Lifetime ES2125229T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56053090A 1990-07-31 1990-07-31
US55994790A 1990-07-31 1990-07-31

Publications (1)

Publication Number Publication Date
ES2125229T3 true ES2125229T3 (es) 1999-03-01

Family

ID=27072210

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91112917T Expired - Lifetime ES2125229T3 (es) 1990-07-31 1991-07-31 Reactor de tratamiento por plasma.

Country Status (3)

Country Link
EP (2) EP0469597B1 (es)
DE (1) DE69130348T2 (es)
ES (1) ES2125229T3 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6835523B1 (en) 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
DE4429380C1 (de) * 1994-08-15 1996-04-25 Biotronik Mess & Therapieg Verfahren zur Herstellung einer nichtkollabierenden intravasalen Gefäßprothese (Stent)
JP3238082B2 (ja) * 1996-05-16 2001-12-10 シャープ株式会社 電子デバイス製造装置
JP3920015B2 (ja) * 2000-09-14 2007-05-30 東京エレクトロン株式会社 Ｓｉ基板の加工方法
DE102023101789A1 (de) * 2023-01-25 2024-07-25 TRUMPF Hüttinger GmbH + Co. KG Niederimpedanz-Hochstromkoaxialleitung für ein Plasmaprozessversorgungssystem und ein Plasmaprozesssystem sowie ein Verfahren zum Betreiben eines Plasmaprozesssystems

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1981000420A1 (en) * 1979-08-09 1981-02-19 Western Electric Co High capacity etching apparatus
GB2132637A (en) * 1983-01-03 1984-07-11 Lfe Corp Process for depositing dielectric films in a plasma glow discharge
DE3336652C2 (de) * 1983-10-08 1985-10-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München Vorrichtung zum Auftragen von Materialien, insbesondere amorphen wasserstoffhaltigen Kohlenstoffs
EP0160202A3 (en) * 1984-04-30 1988-09-21 Ovonic Synthetic Materials Company, Inc. Microwave plasma deposition of coatings and the microwave plasma applied coatings applied thereby
CH668145A5 (fr) * 1986-09-26 1988-11-30 Inst Microtechnique De L Unive Procede et installation de depot de silicium amorphe hydrogene sur un substrat dans une enceinte a plasma.
US4872947A (en) * 1986-12-19 1989-10-10 Applied Materials, Inc. CVD of silicon oxide using TEOS decomposition and in-situ planarization process
US4895734A (en) * 1987-03-31 1990-01-23 Hitachi Chemical Company, Ltd. Process for forming insulating film used in thin film electroluminescent device
JPH0730468B2 (ja) * 1988-06-09 1995-04-05 日電アネルバ株式会社 ドライエッチング装置
EP0372179B1 (de) * 1988-11-07 1992-04-22 Balzers Aktiengesellschaft Durchführung zum Aufbringen von HF-Energie sowie deren Verwendung
US4939105A (en) * 1989-08-03 1990-07-03 Micron Technology, Inc. Planarizing contact etch

Also Published As

Publication number Publication date
EP0469597A2 (en) 1992-02-05
EP0472941A3 (es) 1995-04-05
EP0469597A3 (en) 1992-04-22
EP0472941A2 (en) 1992-03-04
DE69130348T2 (de) 1999-06-17
EP0469597B1 (en) 1998-10-14
DE69130348D1 (de) 1998-11-19

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