ES2134818T3 - Procedimiento de fabricacion de celula solar mejorada de silicio policristalino de grano columnar. - Google Patents

Procedimiento de fabricacion de celula solar mejorada de silicio policristalino de grano columnar.

Info

Publication number
ES2134818T3
ES2134818T3 ES93116174T ES93116174T ES2134818T3 ES 2134818 T3 ES2134818 T3 ES 2134818T3 ES 93116174 T ES93116174 T ES 93116174T ES 93116174 T ES93116174 T ES 93116174T ES 2134818 T3 ES2134818 T3 ES 2134818T3
Authority
ES
Spain
Prior art keywords
silicon
polycrystalline silicon
granular
solar cell
manufacturing procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93116174T
Other languages
English (en)
Inventor
Robert B Hall
Allen M Barnett
Jacob E Brown
Joseph C Checchi
David H Ford
Christopher L Kendall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Astropower Inc
Original Assignee
Astropower Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Astropower Inc filed Critical Astropower Inc
Application granted granted Critical
Publication of ES2134818T3 publication Critical patent/ES2134818T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

LA INVENCION SE REFIERE A TECNICAS PARA LA FABRICACION DE LAMINAS POLICRISTALINAS DE GRANO COLUMNAR, QUE SON ESPECIALMENTE UTILES COMO SUSTRATOS O DISCOS PARA CELULAS SOLARES. LA LAMINA SE HACE APLICANDO SILICIO GRANULAR A UN MATERIAL DE FIJACION, QUE SOPORTA EL MATERIAL GRANULAR. EL MATERIAL DE FIJACION Y EL SILICIO GRANULAR SE SOMETEN A UN PERFIL TERMICO, TODO LO CUAL IMPULSA EL DESARROLLO COLUMNAR MEDIANTE LA FUSION DEL SILICIO DESDE LA PARTE SUPERIOR HACIA ABAJO. EL PERFIL TERMICO CREA SECUENCIALMENTE UNA ZONA DE FUSION EN LA PARTE SUPERIOR DEL SILICIO GRANULAR, Y DESPUES UNA ZONA DE DESARROLLO DONDE COEXISTEN TANTO EL LIQUIDO COMO LA CAPA LAMINAR POLICRISTALINA DE DESARROLLO. SE CREA UNA ZONA DE RECOCIDO, DONDE SE REDUCE CONTROLABLEMENTE LA TEMPERATURA DE LA CAPA LAMINAR DE SILICIO POLICRISTALINO DE DESARROLLO, PARA OBTENER ATENUACION DE EFECTOS RESIDUALES.
ES93116174T 1992-10-09 1993-10-06 Procedimiento de fabricacion de celula solar mejorada de silicio policristalino de grano columnar. Expired - Lifetime ES2134818T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/959,009 US5336335A (en) 1992-10-09 1992-10-09 Columnar-grained polycrystalline solar cell and process of manufacture

Publications (1)

Publication Number Publication Date
ES2134818T3 true ES2134818T3 (es) 1999-10-16

Family

ID=25501555

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93116174T Expired - Lifetime ES2134818T3 (es) 1992-10-09 1993-10-06 Procedimiento de fabricacion de celula solar mejorada de silicio policristalino de grano columnar.

Country Status (7)

Country Link
US (2) US5336335A (es)
EP (2) EP0911885B1 (es)
JP (1) JP2619207B2 (es)
AU (1) AU667130B2 (es)
CA (1) CA2107975C (es)
DE (2) DE69325764T2 (es)
ES (1) ES2134818T3 (es)

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USRE36156E (en) * 1992-10-09 1999-03-23 Astropower, Inc. Columnar-grained polycrystalline solar cell and process of manufacture
US5336335A (en) * 1992-10-09 1994-08-09 Astropower, Inc. Columnar-grained polycrystalline solar cell and process of manufacture
JP3322440B2 (ja) * 1993-06-24 2002-09-09 三洋電機株式会社 薄膜多結晶シリコンの製造方法
US5811021A (en) * 1995-02-28 1998-09-22 Hughes Electronics Corporation Plasma assisted chemical transport method and apparatus
CN1082254C (zh) * 1995-08-22 2002-04-03 松下电器产业株式会社 硅结构体及其制造方法和装置及使用硅结构体的太阳电池
CN1088444C (zh) * 1996-05-21 2002-07-31 德山株式会社 多晶硅棒及其制造方法
JPH10117006A (ja) 1996-08-23 1998-05-06 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置
CA2283334A1 (en) * 1997-03-04 1998-09-11 Astropower, Inc. Columnar-grained polycrystalline solar cell substrate and improved method of manufacture
US5825068A (en) * 1997-03-17 1998-10-20 Integrated Device Technology, Inc. Integrated circuits that include a barrier layer reducing hydrogen diffusion into a polysilicon resistor
DE19711550C2 (de) * 1997-03-20 2000-06-21 Bayer Ag Verfahren zur Herstellung von im wesentlichen Randzonen-freien Formteilen aus multikristallinem Silicium und die Verwendung dieser Formteile
AU2002301188B2 (en) * 1998-07-02 2004-04-29 Astropower Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
AU749571B2 (en) 1998-07-02 2002-06-27 Astropower Inc. Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same
US6472248B2 (en) 1999-07-04 2002-10-29 Canon Kabushiki Kaisha Microcrystalline series photovoltaic element and process for fabrication of same
JP4638012B2 (ja) * 2000-10-27 2011-02-23 信越半導体株式会社 半導体基板とこれを利用した太陽電池セルおよびそれらの製造方法
KR100487426B1 (ko) * 2001-07-11 2005-05-04 엘지.필립스 엘시디 주식회사 폴리실리콘 결정화방법 그리고, 이를 이용한 폴리실리콘박막트랜지스터의 제조방법 및 액정표시소자의 제조방법
AU2003256825A1 (en) * 2002-07-31 2004-02-16 Astropower, Inc. Method and apparatus for manufacturing net shape semiconductor wafers
DE102004048948A1 (de) * 2004-10-07 2006-04-20 Wacker Chemie Ag Vorrichtung und Verfahren zum kontaminationsarmen, automatischen Brechen von Siliciumbruch
DE102005019797A1 (de) * 2005-04-28 2006-11-09 Blitzstrom Gmbh Verfahren zur Herstellung von Solarzellen Substraten
DE102005039118A1 (de) * 2005-08-18 2007-02-22 Wacker Chemie Ag Verfahren und Vorrichtung zum Zerkleinern von Silicium
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
US7959707B2 (en) * 2006-04-28 2011-06-14 Sri International Methods for producing consolidated materials
EP2025015A2 (en) * 2006-06-02 2009-02-18 Innovalight, Inc. Photoactive materials containing group iv nanostructures and optoelectronic devices made therefrom
WO2008030966A1 (en) * 2006-09-07 2008-03-13 Innovalight, Inc. Semiconductor thin films formed from group iv nanoparticles
WO2008039461A2 (en) * 2006-09-27 2008-04-03 Thinsilicon Corp. Back contact device for photovoltaic cells and method of manufacturing a back contact
US7776724B2 (en) * 2006-12-07 2010-08-17 Innovalight, Inc. Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material
CN101647092A (zh) * 2006-12-13 2010-02-10 创新发光体公司 在ⅳ族半导体基底上形成外延层的方法
US7569462B2 (en) * 2006-12-13 2009-08-04 Applied Materials, Inc. Directional crystallization of silicon sheets using rapid thermal processing
US7718707B2 (en) * 2006-12-21 2010-05-18 Innovalight, Inc. Method for preparing nanoparticle thin films
EP2140483A1 (en) * 2007-04-04 2010-01-06 Innovalight, Inc. Methods for optimizing thin film formation with reactive gases
WO2008150769A2 (en) * 2007-05-31 2008-12-11 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
US8968438B2 (en) * 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
US20090053878A1 (en) * 2007-08-21 2009-02-26 Maxim Kelman Method for fabrication of semiconductor thin films using flash lamp processing
US8334194B2 (en) 2008-02-06 2012-12-18 Motech Americas, Llc Methods and apparatus for manufacturing semiconductor wafers
US7851336B2 (en) * 2008-03-13 2010-12-14 Innovalight, Inc. Method of forming a passivated densified nanoparticle thin film on a substrate
US8247312B2 (en) * 2008-04-24 2012-08-21 Innovalight, Inc. Methods for printing an ink on a textured wafer surface
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
US8445364B2 (en) * 2008-06-02 2013-05-21 Corning Incorporated Methods of treating semiconducting materials including melting and cooling
US8049097B2 (en) * 2008-08-11 2011-11-01 General Electric Company Solar cell including cooling channels and method for fabrication
US8545944B2 (en) * 2008-09-19 2013-10-01 Sri International Method for producing solar grade films from semiconductor powders
DE102008049303B4 (de) * 2008-09-29 2012-05-24 Qimonda Ag Verfahren zur Herstellung eines Silizium-Wafers und Siliziumwafer für Solarzellen
EP2356696A4 (en) * 2009-05-06 2013-05-15 Thinsilicon Corp PHOTOVOLTAIC CELLS AND METHOD FOR REINFORCING LIGHT DETECTION IN SEMICONDUCTOR LAYERED TABLES
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
JP2012523716A (ja) * 2009-06-10 2012-10-04 シンシリコン・コーポレーション 光起電モジュール、及び、複数半導体層スタックを有する光起電モジュールの製造方法
US9620664B2 (en) 2010-05-25 2017-04-11 Mossey Creek Technologies, Inc. Coating of graphite tooling for manufacture of semiconductors
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WO2013013138A1 (en) * 2011-07-20 2013-01-24 Mossey Creek Solar, LLC Substrate for use in preparing solar cells
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US3953876A (en) * 1973-06-07 1976-04-27 Dow Corning Corporation Silicon solar cell array
DE3536743C2 (de) * 1985-10-15 1994-11-10 Siemens Ag Verfahren zum Herstellung von großflächigen Siliziumkristallkörpern für Solarzellen
US5336335A (en) * 1992-10-09 1994-08-09 Astropower, Inc. Columnar-grained polycrystalline solar cell and process of manufacture

Also Published As

Publication number Publication date
EP0911885A2 (en) 1999-04-28
CA2107975A1 (en) 1994-04-10
EP0591949A1 (en) 1994-04-13
EP0911885A3 (en) 1999-05-12
EP0591949B1 (en) 1999-07-28
DE69325764D1 (de) 1999-09-02
US5336335A (en) 1994-08-09
CA2107975C (en) 2003-08-05
US5496416A (en) 1996-03-05
AU4891193A (en) 1994-04-21
AU667130B2 (en) 1996-03-07
DE69334310D1 (de) 2010-02-11
JPH06342923A (ja) 1994-12-13
EP0911885B1 (en) 2009-12-30
DE69325764T2 (de) 2000-03-02
JP2619207B2 (ja) 1997-06-11

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