ES2136798T3 - Estructura para la alineacion de una abertura de fuente de iones con un paso de haz de iones prefijado. - Google Patents
Estructura para la alineacion de una abertura de fuente de iones con un paso de haz de iones prefijado.Info
- Publication number
- ES2136798T3 ES2136798T3 ES95303262T ES95303262T ES2136798T3 ES 2136798 T3 ES2136798 T3 ES 2136798T3 ES 95303262 T ES95303262 T ES 95303262T ES 95303262 T ES95303262 T ES 95303262T ES 2136798 T3 ES2136798 T3 ES 2136798T3
- Authority
- ES
- Spain
- Prior art keywords
- alignment
- extraction
- opening
- fixation
- extraction member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/15—External mechanical adjustment of electron or ion optical components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
SE PRESENTA UNA ESTRUCTURA Y UN METODO PARA POSICIONAR EXACTAMENTE Y ALINEAR UNA ABERTURA DE UN MIEMBRO DE EXTRACCION (78) Y UN HUECO DE UN ELECTRODO DE EXTRACCION (140) CON UNA LINEA DE HAZ PREDETERMINADA EN UN APARATO PARA LA IMPLANTACION DE IONES (10). LA ABERTURA DEL MIEMBRO DE EXTRACCION SE POSICIONA CON RESPECTO AL ALOJAMIENTO DE LA FUENTE DEL HAZ DE IONES (44) ELIMINANDO DE ESTA FORMA LOS ERRORES ACUMULATIVOS DE TOLERANCIA QUE INUNDAN LOS APARATOS DE IMPLANTACIONES DE IONES CONOCIDOS HASTA EL MOMENTO. SE UTILIZA UNA FIJACION DE ALINEAMIENTO SEPARABLE (90) EN CONJUNCION CON UN DISPOSITIVO DE AGARRE AUTOCENTRABLE (92) PARA POSICIONAR EXACTAMENTE LA ABERTURA DEL MIEMBRO DE EXTRACCION EN ALINEAMIENTO CON LA LINEA PREDETERMINADA DEL HAZ. EL MIEMBRO DE EXTRACCION SE FIJA A UN ANILLO DE SOPORTE (94) DEL DISPOSITIVO DE AGARRE Y EL DISPOSITIVO DE AGARRE SE MONTA EN LA FIJACION DE ALINEAMIENTO. LA FIJACION DE ALINEAMIENTO SE MONTA EN EL ALOJAMIENTO DE LA FUENTE DE FORMA PRECISA ALINEANDO LA ABERTURA DEL MIEMBRO DE EXTRACCION CON UNA LINEA PREDETERMINADA DEL HAZ. LA ARANDELA DIVIDIDA (107) DEL DISPOSITIVO DE AGARRE SE FIJA A UN TUBO DE SOPORTE (80) RODEANDO LA CAMARA DEL ARCO DE GENERACION DE IONES (18). DESDE EL MOMENTO QUE EL DISPOSITIVO DE AGARRE ES AUTOCENTRABLE, NO SE COMPROMETE EL ALINEAMIENTO DE LA ABERTURA DEL MIEMBRO DE EXTRACCION. ENTONCES, SE QUITA LA FIJACION DE ALINEAMIENTO. DESPUES DE QUITAR LA FIJACION DE ALINEAMIENTO, SE ASEGURA UN DISPOSITIVO DE ELECTRODO DE EXTRACCION DE HUECO VARIABLE (130) EN EL ALOJAMIENTO DE LA FUENTE. SE UTILIZA UNA FIJACION DE FABRICACION DURANTE LA FABRICACION Y EL MONTAJE DEL DISPOSITIVO DE ELECTRODO DE EXTRACCION PARA ASEGURAR QUE EL HUECO DE EXTRACCION ESTE ALINEADO CON UNA LINEA DE HAZ PREDETERMINADA CUANDO SE MONTA EL DISPOSITIVO DEL ELECTRODO DE EXTRACCION EN EL ALOJAMIENTO DE LA FUENTE.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/267,437 US5420415A (en) | 1994-06-29 | 1994-06-29 | Structure for alignment of an ion source aperture with a predetermined ion beam path |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2136798T3 true ES2136798T3 (es) | 1999-12-01 |
Family
ID=23018770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES95303262T Expired - Lifetime ES2136798T3 (es) | 1994-06-29 | 1995-05-16 | Estructura para la alineacion de una abertura de fuente de iones con un paso de haz de iones prefijado. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5420415A (es) |
| EP (1) | EP0690475B1 (es) |
| JP (1) | JP3517762B2 (es) |
| KR (1) | KR100261008B1 (es) |
| CN (1) | CN1132218C (es) |
| DE (1) | DE69511338T2 (es) |
| ES (1) | ES2136798T3 (es) |
| TW (1) | TW278209B (es) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6093456A (en) * | 1995-06-07 | 2000-07-25 | Applied Materials, Inc. | Beam stop apparatus for an ion implanter |
| GB9515090D0 (en) * | 1995-07-21 | 1995-09-20 | Applied Materials Inc | An ion beam apparatus |
| US5914494A (en) * | 1996-03-27 | 1999-06-22 | Thermoceramix, Llc | Arc chamber for an ion implantation system |
| US6239440B1 (en) | 1996-03-27 | 2001-05-29 | Thermoceramix, L.L.C. | Arc chamber for an ion implantation system |
| US5857889A (en) * | 1996-03-27 | 1999-01-12 | Thermoceramix, Llc | Arc Chamber for an ion implantation system |
| US6022258A (en) * | 1996-03-27 | 2000-02-08 | Thermoceramix, Llc | ARC chamber for an ion implantation system |
| US5763890A (en) * | 1996-10-30 | 1998-06-09 | Eaton Corporation | Cathode mounting for ion source with indirectly heated cathode |
| US5703372A (en) * | 1996-10-30 | 1997-12-30 | Eaton Corporation | Endcap for indirectly heated cathode of ion source |
| US5821677A (en) * | 1996-12-05 | 1998-10-13 | Eaton Corporation | Ion source block filament with laybrinth conductive path |
| US5917186A (en) * | 1997-09-09 | 1999-06-29 | Seiko Instruments Inc. | Focused ion beam optical axis adjustment method and focused ion beam apparatus |
| US6452338B1 (en) | 1999-12-13 | 2002-09-17 | Semequip, Inc. | Electron beam ion source with integral low-temperature vaporizer |
| US6501078B1 (en) * | 2000-03-16 | 2002-12-31 | Applied Materials, Inc. | Ion extraction assembly |
| US7064491B2 (en) * | 2000-11-30 | 2006-06-20 | Semequip, Inc. | Ion implantation system and control method |
| JP3916929B2 (ja) * | 2001-11-19 | 2007-05-23 | 株式会社昭和真空 | イオンガン本体への付属部品の取付け方法及び取付け構造 |
| US6688017B2 (en) * | 2002-05-21 | 2004-02-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for aligning an extraction electrode to an arc chamber |
| JP2004014422A (ja) * | 2002-06-11 | 2004-01-15 | Matsushita Electric Ind Co Ltd | イオン注入装置 |
| KR20030096763A (ko) * | 2002-06-17 | 2003-12-31 | 동부전자 주식회사 | 이온빔 발생장치의 일렉트로드 헤드 |
| KR100461785B1 (ko) * | 2002-06-17 | 2004-12-14 | 동부전자 주식회사 | 이온빔 발생장치의 일렉트로드 헤드 애퍼처의 정렬확인장치 |
| US20050242293A1 (en) * | 2003-01-07 | 2005-11-03 | Benveniste Victor M | Mounting mechanism for plasma extraction aperture |
| US7145157B2 (en) * | 2003-09-11 | 2006-12-05 | Applied Materials, Inc. | Kinematic ion implanter electrode mounting |
| US7087913B2 (en) * | 2003-10-17 | 2006-08-08 | Applied Materials, Inc. | Ion implanter electrodes |
| US6992308B2 (en) * | 2004-02-27 | 2006-01-31 | Axcelis Technologies, Inc. | Modulating ion beam current |
| JP4502191B2 (ja) * | 2004-06-18 | 2010-07-14 | ルネサスエレクトロニクス株式会社 | イオンビーム引出電極およびイオン注入装置 |
| KR100553716B1 (ko) * | 2004-08-02 | 2006-02-24 | 삼성전자주식회사 | 이온 주입 설비의 이온 소스부 |
| US7365346B2 (en) * | 2004-12-29 | 2008-04-29 | Matsushita Electric Industrial Co., Ltd. | Ion-implanting apparatus, ion-implanting method, and device manufactured thereby |
| US7265368B2 (en) * | 2005-05-13 | 2007-09-04 | Applera Corporation | Ion optical mounting assemblies |
| US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
| GB0608528D0 (en) * | 2006-04-28 | 2006-06-07 | Applied Materials Inc | Front plate for an ion source |
| DE502007002871D1 (de) | 2007-08-07 | 2010-04-01 | Micronas Gmbh | Positioniereinrichtung zum Positionieren einer Blende in einem lonenstrahl |
| US7915597B2 (en) | 2008-03-18 | 2011-03-29 | Axcelis Technologies, Inc. | Extraction electrode system for high current ion implanter |
| US8089052B2 (en) | 2008-04-24 | 2012-01-03 | Axcelis Technologies, Inc. | Ion source with adjustable aperture |
| AU2012225760A1 (en) * | 2011-03-04 | 2013-09-19 | Perkinelmer Health Sciences, Inc. | Electrostatic lenses and systems including the same |
| CN102956429B (zh) * | 2011-08-22 | 2016-08-03 | 北京中科信电子装备有限公司 | 一种用于宽束离子注入机的引出电极系统 |
| CN103187229A (zh) * | 2011-12-30 | 2013-07-03 | 北京中科信电子装备有限公司 | 一种用于引出电极的滑动密封板装置 |
| WO2014097576A1 (ja) | 2012-12-19 | 2014-06-26 | キヤノンアネルバ株式会社 | グリッドアセンブリおよびイオンビームエッチング装置 |
| US9006689B2 (en) * | 2013-03-26 | 2015-04-14 | Ion Technology Solutions, Llc | Source bushing shielding |
| JP6388520B2 (ja) | 2014-10-17 | 2018-09-12 | 住友重機械イオンテクノロジー株式会社 | ビーム引出スリット構造、イオン源、及びイオン注入装置 |
| US9318302B1 (en) | 2015-03-31 | 2016-04-19 | Axcelis Technologies, Inc. | Integrated extraction electrode manipulator for ion source |
| JP6860576B2 (ja) * | 2016-01-19 | 2021-04-14 | アクセリス テクノロジーズ, インコーポレイテッド | マルチピース電極開口 |
| CN107910240B (zh) * | 2017-12-13 | 2024-04-30 | 合肥中科离子医学技术装备有限公司 | 一种超导质子治疗装置离子源的验证工装 |
| US10714296B2 (en) | 2018-12-12 | 2020-07-14 | Axcelis Technologies, Inc. | Ion source with tailored extraction shape |
| CN119581300B (zh) * | 2024-10-18 | 2025-10-31 | 北京烁科中科信电子装备有限公司 | 一种高能离子注入机光路对中装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3723785A (en) * | 1972-05-23 | 1973-03-27 | Atomic Energy Commission | Deformable beam transport system with extraction port |
| US4847504A (en) * | 1983-08-15 | 1989-07-11 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
| US4580058A (en) * | 1984-03-29 | 1986-04-01 | Zymet, Inc. | Scanning treatment apparatus |
| US4714834A (en) * | 1984-05-09 | 1987-12-22 | Atomic Energy Of Canada, Limited | Method and apparatus for generating ion beams |
| US4985634A (en) * | 1988-06-02 | 1991-01-15 | Oesterreichische Investitionskredit Aktiengesellschaft And Ionen Mikrofabrications | Ion beam lithography |
| US4883968A (en) * | 1988-06-03 | 1989-11-28 | Eaton Corporation | Electron cyclotron resonance ion source |
| US5026997A (en) * | 1989-11-13 | 1991-06-25 | Eaton Corporation | Elliptical ion beam distribution method and apparatus |
| GB9021629D0 (en) * | 1990-10-04 | 1990-11-21 | Superion Ltd | Apparatus for and method of producing ion beams |
| US5306920A (en) * | 1992-11-23 | 1994-04-26 | Motorola, Inc. | Ion implanter with beam resolving apparatus and method for implanting ions |
-
1994
- 1994-06-29 US US08/267,437 patent/US5420415A/en not_active Expired - Lifetime
-
1995
- 1995-04-08 TW TW084103382A patent/TW278209B/zh active
- 1995-05-16 EP EP95303262A patent/EP0690475B1/en not_active Expired - Lifetime
- 1995-05-16 DE DE69511338T patent/DE69511338T2/de not_active Expired - Fee Related
- 1995-05-16 ES ES95303262T patent/ES2136798T3/es not_active Expired - Lifetime
- 1995-06-26 JP JP18212595A patent/JP3517762B2/ja not_active Expired - Fee Related
- 1995-06-29 KR KR1019950018103A patent/KR100261008B1/ko not_active Expired - Fee Related
- 1995-06-29 CN CN95108133A patent/CN1132218C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3517762B2 (ja) | 2004-04-12 |
| DE69511338D1 (de) | 1999-09-16 |
| US5420415A (en) | 1995-05-30 |
| EP0690475A1 (en) | 1996-01-03 |
| CN1119338A (zh) | 1996-03-27 |
| KR100261008B1 (ko) | 2000-08-01 |
| JPH0855596A (ja) | 1996-02-27 |
| EP0690475B1 (en) | 1999-08-11 |
| DE69511338T2 (de) | 2000-03-02 |
| CN1132218C (zh) | 2003-12-24 |
| KR960002544A (ko) | 1996-01-26 |
| TW278209B (es) | 1996-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG2A | Definitive protection |
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