ES2149126A1 - Procedimiento para la fabricacion de celulas solares de silicio con estructura de campo retrodifusor, bajo espesor de base y metalizacion serigrafica. - Google Patents

Procedimiento para la fabricacion de celulas solares de silicio con estructura de campo retrodifusor, bajo espesor de base y metalizacion serigrafica.

Info

Publication number
ES2149126A1
ES2149126A1 ES009900040A ES9900040A ES2149126A1 ES 2149126 A1 ES2149126 A1 ES 2149126A1 ES 009900040 A ES009900040 A ES 009900040A ES 9900040 A ES9900040 A ES 9900040A ES 2149126 A1 ES2149126 A1 ES 2149126A1
Authority
ES
Spain
Prior art keywords
boron
phosphorus
silver paste
silkscreen printing
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES009900040A
Other languages
English (en)
Other versions
ES2149126B1 (es
Inventor
Cuesta Juan Carlos Jimeno
Serrano Ruben Gutierrez
Briongos Fernando Hernando
Baranano Federico Recart
Mendieta Gorka Bueno
Cuesta Maria Velia Rodriguez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Euskal Herriko Unibertsitatea
Original Assignee
Euskal Herriko Unibertsitatea
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Euskal Herriko Unibertsitatea filed Critical Euskal Herriko Unibertsitatea
Priority to ES009900040A priority Critical patent/ES2149126B1/es
Publication of ES2149126A1 publication Critical patent/ES2149126A1/es
Application granted granted Critical
Publication of ES2149126B1 publication Critical patent/ES2149126B1/es
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Procedimiento para la fabricación de células solares de silicio, con estructura de campo retrodifusor, bajo espesor de base y metalización serigráfica. El procedimiento comprende reducir el espesor del substrato de partida (oblea) mediante un ataque químico al silicio, difundir boro, enmascarar una cara de la oblea, ataca químicamente la otra y difundir fósforo. Un ataque autocontrolado de la superficie del boro permite realizar contactos eléctricos poco agresivos. La metalización de ambas caras se efectúa por deposición de una pasta serigráfica de plata que no contiene aluminio. El procedimiento es compatible con texturados de las superficies, deposición de capas antirreflectantes y limpiezas de la oblea. El procedimiento es útil para fabricar células solares con elevada eficiencia de conversión luz/electricidad.
ES009900040A 1999-01-11 1999-01-11 Procedimiento para la fabricacion de celulas solares de silicio con estructura de campo retrodifusor, bajo espesor de base y metalizacion serigrafica. Expired - Fee Related ES2149126B1 (es)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES009900040A ES2149126B1 (es) 1999-01-11 1999-01-11 Procedimiento para la fabricacion de celulas solares de silicio con estructura de campo retrodifusor, bajo espesor de base y metalizacion serigrafica.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES009900040A ES2149126B1 (es) 1999-01-11 1999-01-11 Procedimiento para la fabricacion de celulas solares de silicio con estructura de campo retrodifusor, bajo espesor de base y metalizacion serigrafica.

Publications (2)

Publication Number Publication Date
ES2149126A1 true ES2149126A1 (es) 2000-10-16
ES2149126B1 ES2149126B1 (es) 2001-05-16

Family

ID=8306873

Family Applications (1)

Application Number Title Priority Date Filing Date
ES009900040A Expired - Fee Related ES2149126B1 (es) 1999-01-11 1999-01-11 Procedimiento para la fabricacion de celulas solares de silicio con estructura de campo retrodifusor, bajo espesor de base y metalizacion serigrafica.

Country Status (1)

Country Link
ES (1) ES2149126B1 (es)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4338481A (en) * 1980-10-02 1982-07-06 Joseph Mandelkorn Very thin silicon wafer base solar cell
JPS62108579A (ja) * 1985-11-06 1987-05-19 Sharp Corp 太陽電池の製造方法
JPH0444276A (ja) * 1990-06-07 1992-02-14 Sharp Corp 光電変換装置
JPH07106611A (ja) * 1993-09-29 1995-04-21 Tonen Corp Ｂｓｆ型太陽電池の製造方法
JPH07193263A (ja) * 1993-12-27 1995-07-28 Sharp Corp 太陽電池の製造方法
US5510271A (en) * 1994-09-09 1996-04-23 Georgia Tech Research Corporation Processes for producing low cost, high efficiency silicon solar cells
US5589008A (en) * 1993-10-11 1996-12-31 Universite De Neuchatel Photovoltaic cell and method for fabrication of said cell

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4338481A (en) * 1980-10-02 1982-07-06 Joseph Mandelkorn Very thin silicon wafer base solar cell
JPS62108579A (ja) * 1985-11-06 1987-05-19 Sharp Corp 太陽電池の製造方法
JPH0444276A (ja) * 1990-06-07 1992-02-14 Sharp Corp 光電変換装置
JPH07106611A (ja) * 1993-09-29 1995-04-21 Tonen Corp Ｂｓｆ型太陽電池の製造方法
US5589008A (en) * 1993-10-11 1996-12-31 Universite De Neuchatel Photovoltaic cell and method for fabrication of said cell
JPH07193263A (ja) * 1993-12-27 1995-07-28 Sharp Corp 太陽電池の製造方法
US5510271A (en) * 1994-09-09 1996-04-23 Georgia Tech Research Corporation Processes for producing low cost, high efficiency silicon solar cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN, Vol. 16, No 230 (E-1208), 27.05.1992 & JP 4044276 A (SHARP CORP.) 14.02.1992 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices

Also Published As

Publication number Publication date
ES2149126B1 (es) 2001-05-16

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