ES2153524T3 - Procedimiento de fabricacion de dianas de pulverizacion de grano fino. - Google Patents

Procedimiento de fabricacion de dianas de pulverizacion de grano fino.

Info

Publication number
ES2153524T3
ES2153524T3 ES96113051T ES96113051T ES2153524T3 ES 2153524 T3 ES2153524 T3 ES 2153524T3 ES 96113051 T ES96113051 T ES 96113051T ES 96113051 T ES96113051 T ES 96113051T ES 2153524 T3 ES2153524 T3 ES 2153524T3
Authority
ES
Spain
Prior art keywords
procedure
manufacture
fine grain
white
grain spraying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96113051T
Other languages
English (en)
Inventor
Martin Dr Schlott
Josef Heindel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
Unaxis Materials Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis Materials Deutschland GmbH filed Critical Unaxis Materials Deutschland GmbH
Application granted granted Critical
Publication of ES2153524T3 publication Critical patent/ES2153524T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)

Abstract

EN UN BLANCO CON UNA RELACION LARGO/ANCHO DE AL MENOS 5:1 HECHA DE METALES O ALEACIONES DE METALES FUNDIBLES EN EL AIRE DE LA SERIE SN, IN, BI, PB, ZN, AL QUE TIENE UNA TEMPERATURA PARA EL LIQUIDO POR DEBAJO DE 700 C, EL TAMAÑO MEDIO DE GRANO SE ENCUENTRA POR DEBAJO DE 6 MM, OBTENIENDOSE EL BLANCO MEDIANTE UN PROCEDIMIENTO DIRECTO DE FUNDICION, RETIRANDOSE UNA PARTE DEL CALOR DE SOLIDIFICACION DE LA PARTE DEL BLANCO RECIENTEMENTE SOLIDIFICADA COLOCANDO UN REFRIGERANTE DE MANERA PLANA Y FINAMENTE DIVIDIDO.
ES96113051T 1995-10-11 1996-08-14 Procedimiento de fabricacion de dianas de pulverizacion de grano fino. Expired - Lifetime ES2153524T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1995137765 DE19537765B4 (de) 1995-10-11 1995-10-11 Feinkörniges Sputtertarget mit einem vorgegebenen Breiten- zu Dickenverhältnis sowie Verfahren zur Herstellung von Sputtertargetplatten

Publications (1)

Publication Number Publication Date
ES2153524T3 true ES2153524T3 (es) 2001-03-01

Family

ID=7774523

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96113051T Expired - Lifetime ES2153524T3 (es) 1995-10-11 1996-08-14 Procedimiento de fabricacion de dianas de pulverizacion de grano fino.

Country Status (4)

Country Link
EP (1) EP0768387B1 (es)
DE (1) DE19537765B4 (es)
ES (1) ES2153524T3 (es)
TR (1) TR199600798A2 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19806879A1 (de) * 1998-02-19 1999-08-26 Leybold Materials Gmbh Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung
US11450516B2 (en) * 2019-08-14 2022-09-20 Honeywell International Inc. Large-grain tin sputtering target

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3863703A (en) * 1974-02-14 1975-02-04 Mitsui Mining & Smelting Co Method for casting a large lead anode plate
JPS57185973A (en) * 1981-05-07 1982-11-16 Mitsui Mining & Smelting Co Ltd Production of target for sputtering
JPS63161161A (ja) * 1986-12-23 1988-07-04 Nippon Mining Co Ltd Ａｌ−Ｓｉ系合金製タ−ゲツトとその製造方法
FR2664618B1 (fr) * 1990-07-10 1993-10-08 Pechiney Aluminium Procede de fabrication de cathodes pour pulverisation cathodique a base d'aluminium de tres haute purete.
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same

Also Published As

Publication number Publication date
DE19537765A1 (de) 1997-04-17
TR199600798A2 (tr) 1997-05-21
EP0768387B1 (de) 2000-10-25
EP0768387A1 (de) 1997-04-16
DE19537765B4 (de) 2007-09-06

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