ES2155465T3 - Conversion termica en estado solido de alumina policristalina en zafiro. - Google Patents

Conversion termica en estado solido de alumina policristalina en zafiro.

Info

Publication number
ES2155465T3
ES2155465T3 ES94306449T ES94306449T ES2155465T3 ES 2155465 T3 ES2155465 T3 ES 2155465T3 ES 94306449 T ES94306449 T ES 94306449T ES 94306449 T ES94306449 T ES 94306449T ES 2155465 T3 ES2155465 T3 ES 2155465T3
Authority
ES
Spain
Prior art keywords
polycystalline
solid state
zafiro
aluminum
thermal conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES94306449T
Other languages
English (en)
Inventor
Curtis Edward Scott
Lionel Monty Levinson
Randolph E Maxwell
Mary Sue Kaliszewski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of ES2155465T3 publication Critical patent/ES2155465T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Preparation Of Clay, And Manufacture Of Mixtures Containing Clay Or Cement (AREA)

Abstract

UN PROCESO DE ESTADO SOLIDO PARA CONVERSION EN BRUTO DE UN CUERPO CERAMICO POLICRISTALINO DENSO EN UN CUERPO MONOCRISTALINO HA SIDO EFECTUADO CALENTANDO EL MATERIAL POLICRISTALINO A UNA TEMPERATURA POR ENCIMA DE LA MITAD DE LA TEMPERATURA DE FUSION DEL MATERIAL PERO POR DEBAJO DEL PUNTO DE FUSION DEL MATERIAL. COMO EL PROCESO ES UN PROCESO DE ESTADO SOLIDO ES NECESARIO QUE NO FUNDA EL CUERPO CERAMICO PARA CONVERTIRLO A MONOCRISTAL. EL PROCESO HA SIDO USADO PARA CONVERTIR UN CUERPO DENSO DE ALUMINA POLICRISTALINA (PCA) QUE CONTIENE MENOS DE 100 WPPM DE MAGNESIO A ZAFIRO (MONOCRISTAL DE ALUMINA) CALENTANDO EL PCA A UNA TEMPERATURA POR ENCIMA DE 1100 50
ES94306449T 1993-09-24 1994-09-01 Conversion termica en estado solido de alumina policristalina en zafiro. Expired - Lifetime ES2155465T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/126,954 US5451553A (en) 1993-09-24 1993-09-24 Solid state thermal conversion of polycrystalline alumina to sapphire

Publications (1)

Publication Number Publication Date
ES2155465T3 true ES2155465T3 (es) 2001-05-16

Family

ID=22427545

Family Applications (1)

Application Number Title Priority Date Filing Date
ES94306449T Expired - Lifetime ES2155465T3 (es) 1993-09-24 1994-09-01 Conversion termica en estado solido de alumina policristalina en zafiro.

Country Status (12)

Country Link
US (1) US5451553A (es)
EP (1) EP0645476B1 (es)
JP (1) JPH07165484A (es)
KR (1) KR100416023B1 (es)
CN (1) CN1047412C (es)
BR (1) BR9403826A (es)
CA (1) CA2132185C (es)
CZ (1) CZ233994A3 (es)
DE (1) DE69427007T2 (es)
ES (1) ES2155465T3 (es)
PL (1) PL305145A1 (es)
TW (1) TW336258B (es)

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US5682082A (en) * 1996-07-29 1997-10-28 Osram Sylvania Inc. Translucent polycrystalline alumina and method of making same
US6126889A (en) 1998-02-11 2000-10-03 General Electric Company Process of preparing monolithic seal for sapphire CMH lamp
US6583563B1 (en) 1998-04-28 2003-06-24 General Electric Company Ceramic discharge chamber for a discharge lamp
US7297037B2 (en) * 1998-04-28 2007-11-20 General Electric Company Ceramic discharge chamber for a discharge lamp
US6214427B1 (en) 1998-08-28 2001-04-10 General Electric Company Method of making an electronic device having a single crystal substrate formed by solid state crystal conversion
US6299681B1 (en) * 1998-11-27 2001-10-09 General Electric Company Single crystal conversion control
US6414436B1 (en) 1999-02-01 2002-07-02 Gem Lighting Llc Sapphire high intensity discharge projector lamp
JP2001064075A (ja) * 1999-08-30 2001-03-13 Sumitomo Chem Co Ltd 透光性アルミナ焼結体およびその製造方法
US6812441B2 (en) 2000-08-04 2004-11-02 The Penn State Research Foundation Method and apparatus for the preparation of transparent alumina ceramics by microwave sintering
WO2003011792A1 (en) 2001-08-01 2003-02-13 The Pennsylvania State University Research Foundation Method and apparatus for the preparation of transparent alumina ceramics by microwave sintering
US6475942B1 (en) * 2000-09-05 2002-11-05 General Electric Company Conversion of polycrystalline alumina to single crystal sapphire using molybdenum doping
DE10141961A1 (de) * 2001-08-28 2003-03-20 Philips Corp Intellectual Pty Entladungslampe und Außenkolben hierfür
US6873108B2 (en) * 2001-09-14 2005-03-29 Osram Sylvania Inc. Monolithic seal for a sapphire metal halide lamp
US7348076B2 (en) 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
EP1888996B1 (en) * 2005-06-10 2017-12-13 Saint-Gobain Ceramics and Plastics, Inc. Transparent ceramic composite
AU2007299677B2 (en) * 2006-09-22 2011-05-12 Saint-Gobain Ceramics & Plastics, Inc. C-plane sapphire method and apparatus
CN101205628A (zh) * 2006-12-18 2008-06-25 庄育丰 蓝宝石晶体生长方法
US8157912B2 (en) * 2007-09-11 2012-04-17 Osram Sylvania Inc. Method of converting PCA to sapphire and converted article
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus
CN101307484B (zh) * 2008-02-04 2011-08-31 中国科学院上海硅酸盐研究所 多晶-单晶固相转化方法
US20090211514A1 (en) * 2008-02-26 2009-08-27 Lehigh University Single crystal conversion process
JP5704565B2 (ja) * 2011-03-31 2015-04-22 独立行政法人産業技術総合研究所 単結晶製造方法および大型単結晶
CN102557596B (zh) * 2012-01-05 2013-08-14 西北工业大学 一种激光送粉法制备氧化铝基共晶陶瓷的方法
US10052848B2 (en) 2012-03-06 2018-08-21 Apple Inc. Sapphire laminates
US9221289B2 (en) 2012-07-27 2015-12-29 Apple Inc. Sapphire window
US9232672B2 (en) 2013-01-10 2016-01-05 Apple Inc. Ceramic insert control mechanism
US9678540B2 (en) 2013-09-23 2017-06-13 Apple Inc. Electronic component embedded in ceramic material
US9632537B2 (en) 2013-09-23 2017-04-25 Apple Inc. Electronic component embedded in ceramic material
US9154678B2 (en) 2013-12-11 2015-10-06 Apple Inc. Cover glass arrangement for an electronic device
US9225056B2 (en) 2014-02-12 2015-12-29 Apple Inc. Antenna on sapphire structure
US10406634B2 (en) 2015-07-01 2019-09-10 Apple Inc. Enhancing strength in laser cutting of ceramic components
US9995875B2 (en) 2015-07-28 2018-06-12 The Penn State Research Foundation Method and apparatus for producing crystalline cladding and crystalline core optical fibers
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure
CN107829132A (zh) * 2017-10-10 2018-03-23 上海应用技术大学 一种制备氧化铝单晶的方法
GB2593950A (en) 2020-04-08 2021-10-13 Corning Inc Solid state conversion of polycrystalline material
CN112795792A (zh) * 2020-12-07 2021-05-14 南通泰德电子材料科技有限公司 一种生产6n5超高纯铝的生产工艺

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US988230A (en) * 1910-05-10 1911-03-28 Heller & Son L Process of producing synthetic sapphires.
US3026210A (en) * 1961-01-03 1962-03-20 Gen Electric Transparent alumina and method of preparation
US3382047A (en) * 1964-12-14 1968-05-07 Ibm Preparing large single crystalline bodies of rare earth chalcogenides
US3943324A (en) * 1970-12-14 1976-03-09 Arthur D. Little, Inc. Apparatus for forming refractory tubing
US3998686A (en) * 1975-03-10 1976-12-21 Corning Glass Works Sapphire growth from the melt using porous alumina raw batch material
GB1595518A (en) * 1977-03-11 1981-08-12 Gen Electric Polycrystalline alumina material
US4402787A (en) * 1979-05-31 1983-09-06 Ngk Insulators, Ltd. Method for producing a single crystal
JPS5692190A (en) * 1979-12-27 1981-07-25 Toshiba Ceramics Co Ltd Oxide single crystal body and its production
US4285732A (en) * 1980-03-11 1981-08-25 General Electric Company Alumina ceramic
JPS5792591A (en) * 1980-11-28 1982-06-09 Ngk Insulators Ltd Production of single crystal
JPS6221794A (ja) * 1985-07-17 1987-01-30 Matsushima Kogyo Co Ltd 集光加熱装置によるブル−サフアイア単結晶の製造方法
US4629377A (en) * 1985-07-30 1986-12-16 Fellows Corporation Disposable disk cutter
JPS62278198A (ja) * 1986-05-27 1987-12-03 Matsushima Kogyo Co Ltd 集光フロ−テイングゾ−ン法によるブラツクスタ−サフアイアの製造方法
JPS6311591A (ja) * 1986-07-01 1988-01-19 Matsushita Electric Ind Co Ltd 単結晶セラミクスの製造方法
US5427051A (en) * 1993-05-21 1995-06-27 General Electric Company Solid state formation of sapphire using a localized energy source

Also Published As

Publication number Publication date
BR9403826A (pt) 1995-06-06
EP0645476A2 (en) 1995-03-29
DE69427007T2 (de) 2001-10-18
JPH07165484A (ja) 1995-06-27
CA2132185A1 (en) 1995-03-25
PL305145A1 (en) 1995-04-03
CA2132185C (en) 2006-05-09
DE69427007D1 (de) 2001-05-10
EP0645476B1 (en) 2001-04-04
KR100416023B1 (ko) 2004-08-30
TW336258B (en) 1998-07-11
CN1047412C (zh) 1999-12-15
CZ233994A3 (en) 1995-12-13
CN1103679A (zh) 1995-06-14
US5451553A (en) 1995-09-19
EP0645476A3 (en) 1996-04-03
KR950008735A (ko) 1995-04-19

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