ES2159391T3 - Substrato para recubrimiento. - Google Patents

Substrato para recubrimiento.

Info

Publication number
ES2159391T3
ES2159391T3 ES97908102T ES97908102T ES2159391T3 ES 2159391 T3 ES2159391 T3 ES 2159391T3 ES 97908102 T ES97908102 T ES 97908102T ES 97908102 T ES97908102 T ES 97908102T ES 2159391 T3 ES2159391 T3 ES 2159391T3
Authority
ES
Spain
Prior art keywords
substrate
coating
fine
way
irregularities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES97908102T
Other languages
English (en)
Inventor
Michael Goetz
Walter Hotz
Herbert Keppner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3A Composites International AG
Original Assignee
Alusuisse Technology and Management Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alusuisse Technology and Management Ltd filed Critical Alusuisse Technology and Management Ltd
Application granted granted Critical
Publication of ES2159391T3 publication Critical patent/ES2159391T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y10T428/12764—Next to Al-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Adornments (AREA)

Abstract

SUSTRATO DE RECUBRIMIENTO, QUE CONTIENE UN PRODUCTO ENROLLADO FORMADO DE ALUMINIO O DE ALEACIONES DE ALUMINIO, PARA RECUBRIMIENTOS POR LAMINA FINA PARA OBTENER COMPONENTES ELECTRONICOS. EL SUSTRATO DE RECUBRIMIENTO EVITA LA INTERDIFUSION DE ELEMENTOS DEL SUSTRATO Y ELEMENTOS DE RECUBRIMENTO DE LA LAMINA FINA Y POSIBILITA EL CONTROL TOTAL DE IRREGULARIDADES MEDIANTE LOS RECUBRIMIENTOS EN LAMINA FINA. LAS IRREGULARIDADES PRESENTES DE MANERA LOCAL SOBRE LA SUPERFICIE DEL SUSTRATO QUE SE VA A RECUBRIR, QUE TIENEN UNA EXTENSION MAXIMA MEDIDA VERTICALMENTE CON RESPECTO A LA SUPERFICIE DEL SUSTRATO, MENOR DE 10 MI M Y MAS DE 0,1 MI M, ESTAN DE TAL MANERA QUE LOS LADOS DE LAS IRREGULARIDADES TOTALES SE PUEDEN EXPONER COMPLETAMENTE A LA DEPOSICION DE MATERIAL QUE SE COLOCA SOBRE LA SUPERFICIE DEL SUSTRATO DE UNA MANERA PERPENDICULAR.
ES97908102T 1996-04-03 1997-03-27 Substrato para recubrimiento. Expired - Lifetime ES2159391T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH86596 1996-04-03

Publications (1)

Publication Number Publication Date
ES2159391T3 true ES2159391T3 (es) 2001-10-01

Family

ID=4196989

Family Applications (1)

Application Number Title Priority Date Filing Date
ES97908102T Expired - Lifetime ES2159391T3 (es) 1996-04-03 1997-03-27 Substrato para recubrimiento.

Country Status (10)

Country Link
US (1) US6124039A (es)
EP (1) EP0914486B1 (es)
AT (1) ATE203781T1 (es)
AU (1) AU2020597A (es)
CA (1) CA2250535C (es)
DE (1) DE59704202D1 (es)
ES (1) ES2159391T3 (es)
PT (1) PT914486E (es)
TW (1) TW589387B (es)
WO (1) WO1997038145A1 (es)

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DE19916061A1 (de) * 1999-04-09 2000-10-12 Bayer Ag Siliciumformteile mit zeitlich stabiler elektronischer Oberflächenpassivierung
GB2354188A (en) * 1999-09-16 2001-03-21 Univ Sheffield Plasma treatment of substrate for adhesive or coating
US6379382B1 (en) 2000-03-13 2002-04-30 Jun Yang Stent having cover with drug delivery capability
US7053294B2 (en) * 2001-07-13 2006-05-30 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
US6579472B2 (en) 2001-07-27 2003-06-17 The Boeing Company Corrosion inhibiting sol-gel coatings for metal alloys
US6768048B2 (en) * 2002-12-04 2004-07-27 The Boeing Company Sol-gel coatings for solar cells
US20050072461A1 (en) * 2003-05-27 2005-04-07 Frank Kuchinski Pinhole porosity free insulating films on flexible metallic substrates for thin film applications
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US7605328B2 (en) * 2004-02-19 2009-10-20 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US8372734B2 (en) 2004-02-19 2013-02-12 Nanosolar, Inc High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles
US20070163642A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles
US8642455B2 (en) * 2004-02-19 2014-02-04 Matthew R. Robinson High-throughput printing of semiconductor precursor layer from nanoflake particles
US20070163639A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from microflake particles
US7604843B1 (en) 2005-03-16 2009-10-20 Nanosolar, Inc. Metallic dispersion
US8846141B1 (en) 2004-02-19 2014-09-30 Aeris Capital Sustainable Ip Ltd. High-throughput printing of semiconductor precursor layer from microflake particles
US8309163B2 (en) * 2004-02-19 2012-11-13 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US8623448B2 (en) * 2004-02-19 2014-01-07 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles
US8329501B1 (en) 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
US20070169809A1 (en) * 2004-02-19 2007-07-26 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides
US20060060237A1 (en) * 2004-09-18 2006-03-23 Nanosolar, Inc. Formation of solar cells on foil substrates
US7700464B2 (en) * 2004-02-19 2010-04-20 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from nanoflake particles
FR2870989B1 (fr) * 2004-05-27 2006-08-04 Commissariat Energie Atomique Substrat pour application electronique, comprenant un support flexible et son procede de fabrication
US8541048B1 (en) 2004-09-18 2013-09-24 Nanosolar, Inc. Formation of photovoltaic absorber layers on foil substrates
US7732229B2 (en) 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
US20090032108A1 (en) * 2007-03-30 2009-02-05 Craig Leidholm Formation of photovoltaic absorber layers on foil substrates
US7838868B2 (en) 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
US8927315B1 (en) 2005-01-20 2015-01-06 Aeris Capital Sustainable Ip Ltd. High-throughput assembly of series interconnected solar cells
EP1829991A1 (fr) * 2006-03-02 2007-09-05 UGINE & ALZ FRANCE Tôle en acier inoxydable revêtue par un revêtement auto-nettoyant
DE102006028429B3 (de) * 2006-06-21 2007-06-28 Fachhochschule Kiel Verfahren zur Herstellung einer Absorberbeschichtung auf Sol-Gel-Basis für Solarthermie
EP1993142A1 (de) * 2007-05-14 2008-11-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Reflektiv beschichtetes Halbleiterbauelement, Verfahren zu dessen Herstellung sowie dessen Verwendung
US20080302357A1 (en) * 2007-06-05 2008-12-11 Denault Roger Solar photovoltaic collector hybrid
WO2009004560A2 (en) * 2007-07-04 2009-01-08 Koninklijke Philips Electronics N.V. A method for forming a patterned layer on a substrate
JP5064935B2 (ja) * 2007-08-22 2012-10-31 株式会社神戸製鋼所 耐久性と低汚染性を兼備した陽極酸化処理アルミニウム合金
US20090065046A1 (en) * 2007-09-12 2009-03-12 Denault Roger Solar photovoltaic module to solar collector hybrid retrofit
ES2402779T3 (es) * 2007-12-14 2013-05-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Célula solar de película delgada y procedimiento para su fabricación
DE102009004966A1 (de) 2008-01-15 2009-07-23 Mol Katalysatortechnik Gmbh Verfahren zur Herstellung einer Solarzelle sowie Solarzelle
US8247243B2 (en) 2009-05-22 2012-08-21 Nanosolar, Inc. Solar cell interconnection
WO2011042328A1 (en) * 2009-10-06 2011-04-14 Oerlikon Solar Ag Trübbach Method of coating a substrate
EP2328183A1 (de) * 2009-11-26 2011-06-01 Engineered Products Switzerland AG Substrat mit einer Metallfolie zur Herstellung von Photovoltaik-Zellen
TWI418472B (zh) * 2011-08-08 2013-12-11 Prior Company Ltd 裝飾薄膜、加飾成型品以及加飾成型品的製造方法
US9105779B2 (en) 2011-09-26 2015-08-11 International Business Machines Corporation Method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer
WO2016068293A1 (ja) * 2014-10-31 2016-05-06 株式会社Uacj 磁気ディスク用アルミニウム合金基板
BE1022819B1 (nl) * 2015-03-12 2016-09-13 Polyvision, Naamloze Vennootschap Fotovoltaïsche zonnecel en werkwijze om ze te vervaardigen
JP6646551B2 (ja) * 2015-12-25 2020-02-14 昭和電工株式会社 磁気記録媒体用基板
JP6574740B2 (ja) * 2016-07-08 2019-09-11 昭和電工株式会社 磁気記録媒体用基板およびハードディスクドライブ
JP6832179B2 (ja) * 2017-02-03 2021-02-24 昭和電工株式会社 磁気記録媒体用基板およびハードディスクドライブ
WO2022175551A1 (en) * 2021-02-22 2022-08-25 Microshade A/S Angular and spectrally selective shading sheet

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CH683188A5 (de) * 1991-01-11 1994-01-31 Alusuisse Lonza Services Ag Aluminiumoberflächen.
CH689065A5 (de) * 1994-11-24 1998-08-31 Alusuisse Lonza Services Ag Aluminiumoberflaechen fuer lichttechnische Zwecke.
CH690080A5 (de) * 1995-09-12 2000-04-14 Alusuisse Lonza Services Ag Aluminium-Reflektor mit reflexionserhöhendem Schichtverbund.
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US5723221A (en) * 1996-04-26 1998-03-03 Formica Corporation Aluminous press plate and process for producing same

Also Published As

Publication number Publication date
WO1997038145A1 (de) 1997-10-16
EP0914486B1 (de) 2001-08-01
PT914486E (pt) 2001-11-30
CA2250535A1 (en) 1997-10-16
DE59704202D1 (de) 2001-09-06
US6124039A (en) 2000-09-26
TW589387B (en) 2004-06-01
AU2020597A (en) 1997-10-29
CA2250535C (en) 2004-05-18
EP0914486A1 (de) 1999-05-12
ATE203781T1 (de) 2001-08-15

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