ES2175467T3 - Circuito integrado aislado termicamente. - Google Patents

Circuito integrado aislado termicamente.

Info

Publication number
ES2175467T3
ES2175467T3 ES97944597T ES97944597T ES2175467T3 ES 2175467 T3 ES2175467 T3 ES 2175467T3 ES 97944597 T ES97944597 T ES 97944597T ES 97944597 T ES97944597 T ES 97944597T ES 2175467 T3 ES2175467 T3 ES 2175467T3
Authority
ES
Spain
Prior art keywords
integrated circuit
circuit isolated
semiconductor
isolated thermally
thermally
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES97944597T
Other languages
English (en)
Inventor
Michael F Dries
Roger L Roisen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of ES2175467T3 publication Critical patent/ES2175467T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H10D89/105—Integrated device layouts adapted for thermal considerations

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

EN UN CIRCUITO TERMICAMENTE AISLADO FORMADO SOBRE UN SEMICONDUCTOR SOBRE UNA ESTRUCTURA AISLANTE QUE INCLUYE UN SEMICONDUCTOR RODEADO POR UNA PORCION EXTERIOR DE SEMICONDUCTOR CON UN AISLADOR ENTRE MEDIAS, UNA CAVIDAD FORMADA EN EL SUBSTRATO DE SEMICONDUCTOR SUBYACENTE OPUESTO AL ISLOTE ASEGURA UN AISLAMIENTO TERMICO.
ES97944597T 1996-10-15 1997-10-02 Circuito integrado aislado termicamente. Expired - Lifetime ES2175467T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/729,208 US5783854A (en) 1996-10-15 1996-10-15 Thermally isolated integrated circuit

Publications (1)

Publication Number Publication Date
ES2175467T3 true ES2175467T3 (es) 2002-11-16

Family

ID=24930036

Family Applications (1)

Application Number Title Priority Date Filing Date
ES97944597T Expired - Lifetime ES2175467T3 (es) 1996-10-15 1997-10-02 Circuito integrado aislado termicamente.

Country Status (5)

Country Link
US (1) US5783854A (es)
EP (1) EP0951737B1 (es)
DE (1) DE69712368T2 (es)
ES (1) ES2175467T3 (es)
WO (1) WO1998016955A1 (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100937599B1 (ko) 2007-12-17 2010-01-20 한국전자통신연구원 반도체 장치 및 그 형성 방법
US8614491B2 (en) * 2009-04-07 2013-12-24 Honeywell International Inc. Package interface plate for package isolation structures
US8569808B1 (en) 2012-04-06 2013-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature stabilitized MEMS
US9054063B2 (en) * 2013-04-05 2015-06-09 Infineon Technologies Ag High power single-die semiconductor package
US9287831B2 (en) * 2013-12-23 2016-03-15 Analog Devices Global Temperature stabilized circuitry
WO2015153179A1 (en) 2014-04-01 2015-10-08 Agiltron, Inc. Microelectromechanical displacement structure and method for controlling displacement
US20180108642A1 (en) * 2016-10-13 2018-04-19 Globalfoundries Inc. Interposer heater for high bandwidth memory applications
US10775559B2 (en) 2018-01-26 2020-09-15 Analog Photonics LLC Photonics fabrication process performance improvement
US10976542B2 (en) 2018-01-26 2021-04-13 Analog Photonics LLC Aberration correction of optical phased arrays
CN111029350B (zh) * 2019-11-26 2023-09-05 上海微阱电子科技有限公司 一种图像传感器结构和形成方法
CN111426399B (zh) * 2020-03-28 2022-04-15 无锡豪帮高科股份有限公司 一种基于热电堆的无线温度传感器的生产工艺

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769562A (en) * 1972-02-07 1973-10-30 Texas Instruments Inc Double isolation for electronic devices
US4257061A (en) * 1977-10-17 1981-03-17 John Fluke Mfg. Co., Inc. Thermally isolated monolithic semiconductor die
JP3125529B2 (ja) * 1993-08-23 2001-01-22 富士電機株式会社 半導体装置
US5360987A (en) * 1993-11-17 1994-11-01 At&T Bell Laboratories Semiconductor photodiode device with isolation region
US5508231A (en) * 1994-03-07 1996-04-16 National Semiconductor Corporation Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits
DE4418207C1 (de) * 1994-05-25 1995-06-22 Siemens Ag Thermischer Sensor/Aktuator in Halbleitermaterial
US5600174A (en) * 1994-10-11 1997-02-04 The Board Of Trustees Of The Leeland Stanford Junior University Suspended single crystal silicon structures and method of making same

Also Published As

Publication number Publication date
EP0951737B1 (en) 2002-05-02
US5783854A (en) 1998-07-21
WO1998016955A1 (en) 1998-04-23
DE69712368T2 (de) 2002-11-21
EP0951737A1 (en) 1999-10-27
DE69712368D1 (de) 2002-06-06

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