ES2177227T3 - Magnetorresistencia de efecto tunel y captador magnetico que utiliza dicha magnetorresistencia. - Google Patents

Magnetorresistencia de efecto tunel y captador magnetico que utiliza dicha magnetorresistencia.

Info

Publication number
ES2177227T3
ES2177227T3 ES99902633T ES99902633T ES2177227T3 ES 2177227 T3 ES2177227 T3 ES 2177227T3 ES 99902633 T ES99902633 T ES 99902633T ES 99902633 T ES99902633 T ES 99902633T ES 2177227 T3 ES2177227 T3 ES 2177227T3
Authority
ES
Spain
Prior art keywords
magnetorresistencia
tunnel effect
layer
magnetic receiver
magnetic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES99902633T
Other languages
English (en)
Inventor
Bernard Dieny
Laurence Giacomoni
Anatoly Vedyaev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9522845&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES2177227(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of ES2177227T3 publication Critical patent/ES2177227T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)
  • Thin Magnetic Films (AREA)

Abstract

Magnetorresistencia de efecto túnel que comprende, bajo la forma de un apilamiento: 5 - una primera capa (12) de material magnético de imantación libre, - una capa (16), llamada de barrera, de un material aislante eléctrico, y - una segunda capa (14) de material magnético de imantación atrapada, caracterizada porque la primera capa (12) de material magnético presenta un espesor inferior o igual a 7 nm.
ES99902633T 1998-02-11 1999-02-10 Magnetorresistencia de efecto tunel y captador magnetico que utiliza dicha magnetorresistencia. Expired - Lifetime ES2177227T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9801616A FR2774774B1 (fr) 1998-02-11 1998-02-11 Magnetoresistance a effet tunnel et capteur magnetique utilisant une telle magnetoresistance

Publications (1)

Publication Number Publication Date
ES2177227T3 true ES2177227T3 (es) 2002-12-01

Family

ID=9522845

Family Applications (1)

Application Number Title Priority Date Filing Date
ES99902633T Expired - Lifetime ES2177227T3 (es) 1998-02-11 1999-02-10 Magnetorresistencia de efecto tunel y captador magnetico que utiliza dicha magnetorresistencia.

Country Status (7)

Country Link
US (1) US6462641B1 (es)
EP (1) EP1055259B1 (es)
JP (1) JP2002503887A (es)
DE (1) DE69901790T2 (es)
ES (1) ES2177227T3 (es)
FR (1) FR2774774B1 (es)
WO (1) WO1999041792A1 (es)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2814592B1 (fr) * 2000-09-26 2003-01-03 Commissariat Energie Atomique Dispositif a vanne de spin a reflexion electronique speculaire dependant du spin
US6937446B2 (en) * 2000-10-20 2005-08-30 Kabushiki Kaisha Toshiba Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
FR2817999B1 (fr) * 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
US6771473B2 (en) * 2001-01-22 2004-08-03 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element and method for producing the same
US6847509B2 (en) 2001-02-01 2005-01-25 Kabushiki Kaisha Toshiba Magnetoresistive head and perpendicular magnetic recording-reproducing apparatus
US7220498B2 (en) * 2001-05-31 2007-05-22 National Institute Of Advanced Industrial Science And Technology Tunnel magnetoresistance element
JP2002359413A (ja) * 2001-05-31 2002-12-13 National Institute Of Advanced Industrial & Technology 強磁性トンネル磁気抵抗素子
JP4184668B2 (ja) * 2002-01-10 2008-11-19 富士通株式会社 Ｃｐｐ構造磁気抵抗効果素子
US6638774B2 (en) * 2002-01-15 2003-10-28 Infineon Technologies, Ag Method of making resistive memory elements with reduced roughness
JP2003218425A (ja) * 2002-01-18 2003-07-31 Hitachi Ltd 有限電圧下で高磁気抵抗率を示す強磁性トンネル接合素子、および、それを用いた強磁気抵抗効果型ヘッド、磁気ヘッドスライダ、ならびに磁気ディスク装置
JP3836788B2 (ja) * 2002-12-26 2006-10-25 株式会社東芝 磁気抵抗効果素子、磁気抵抗効果型ヘッドおよび磁気記録再生装置
DE10309244A1 (de) * 2003-03-03 2004-09-23 Siemens Ag Magnetisches Speicherelement, insbesondere MRAM-Element, mit einem TMR-Dünnschichtensystem
US6762954B1 (en) 2003-05-09 2004-07-13 Alan S. Edelstein Local probe of magnetic properties
US20080102320A1 (en) * 2004-04-15 2008-05-01 Edelstein Alan S Non-erasable magnetic identification media
US7324312B2 (en) * 2004-08-30 2008-01-29 Hitachi Global Storage Technologies Netherlands B.V. Sensor with in-stack bias structure providing exchange stabilization
US7397637B2 (en) * 2004-08-30 2008-07-08 Hitachi Global Storage Technologies Netherlands B.V. Sensor with in-stack bias structure providing enhanced magnetostatic stabilization
US7233142B1 (en) 2004-09-02 2007-06-19 United States Of America As Represented By The Secretary Of The Army Planer reader of non-erasable magnetic media and local permeability
US7394624B2 (en) * 2005-02-23 2008-07-01 Hitachi Global Storage Technologies Netherlands B.V. Read sensor with a uniform longitudinal bias stack
US7606007B2 (en) * 2006-02-17 2009-10-20 Hitachi Global Storage Technologies Netherlands B.V. Shield stabilization for magnetoresistive sensors
US20070211392A1 (en) * 2006-03-08 2007-09-13 Zeltser Alexander M Spin valve with Ir-Mn-Cr pinning layer and seed layer including Pt-Mn
EP2065886A1 (en) * 2007-11-27 2009-06-03 Hitachi Ltd. Magnetoresistive device
CN102478546B (zh) * 2010-11-30 2015-11-18 北京德锐磁星科技有限公司 微机电磁性生物传感器
JP5739685B2 (ja) * 2011-02-14 2015-06-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
US8884616B2 (en) * 2011-06-22 2014-11-11 Infineon Technologies Ag XMR angle sensors
US9030780B2 (en) 2012-08-08 2015-05-12 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for reading a non-volatile memory using a spin torque oscillator
US9245617B2 (en) 2013-12-17 2016-01-26 The United States Of America As Represented By The Secretary Of The Army Nonvolatile memory cells programable by phase change and method
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields
JP6763887B2 (ja) 2015-06-05 2020-09-30 アレグロ・マイクロシステムズ・エルエルシー 磁界に対する応答が改善されたスピンバルブ磁気抵抗効果素子
FR3054364B1 (fr) * 2016-07-20 2018-08-17 Commissariat A L'energie Atomique Et Aux Energies Alternatives Aimant permanent comprenant un empilement de n motifs
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression
US12320870B2 (en) 2022-07-19 2025-06-03 Allegro Microsystems, Llc Controlling out-of-plane anisotropy in an MR sensor with free layer dusting
US12359904B2 (en) 2023-01-26 2025-07-15 Allegro Microsystems, Llc Method of manufacturing angle sensors including magnetoresistance elements including different types of antiferromagnetic materials
US12352832B2 (en) 2023-01-30 2025-07-08 Allegro Microsystems, Llc Reducing angle error in angle sensor due to orthogonality drift over magnetic-field

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2248566B1 (es) * 1973-10-23 1976-11-19 Cii
DE3820475C1 (es) 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
EP0672303B1 (en) * 1993-10-06 1997-12-03 Koninklijke Philips Electronics N.V. Magneto-resistance device, and magnetic head employing such a device
US5712612A (en) * 1996-01-02 1998-01-27 Hewlett-Packard Company Tunneling ferrimagnetic magnetoresistive sensor
DE19701509C2 (de) * 1996-01-19 2003-08-21 Fujitsu Ltd Magnetsensoren
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
TW367493B (en) * 1996-04-30 1999-08-21 Toshiba Corp Reluctance component
WO1997045883A1 (en) * 1996-05-28 1997-12-04 Shimadzu Corporation Magneto-resistance effect element, magneto-resistance effect type head, memory element, and method for manufacturing them

Also Published As

Publication number Publication date
EP1055259B1 (fr) 2002-06-12
FR2774774A1 (fr) 1999-08-13
WO1999041792A1 (fr) 1999-08-19
US6462641B1 (en) 2002-10-08
FR2774774B1 (fr) 2000-03-03
DE69901790T2 (de) 2003-02-06
DE69901790D1 (de) 2002-07-18
JP2002503887A (ja) 2002-02-05
EP1055259A1 (fr) 2000-11-29

Similar Documents

Publication Publication Date Title
ES2177227T3 (es) Magnetorresistencia de efecto tunel y captador magnetico que utiliza dicha magnetorresistencia.
EP0831541A3 (en) Ferromagnetic tunnel junction, magnetoresistive element and magnetic head
WO2004013861A3 (en) Magnetic element utilizing spin transfer and an mram device using the magnetic element
EP1391942A4 (en) TUNNEL MAGNETIC RESISTANCE ELEMENT
EP1061592A3 (en) Magneto-resistance effect element, and its use as memory element
MY124179A (en) Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
WO2003019569A3 (en) Magneto-electronic component
MY117062A (en) Magnetic tunnel junction head structure with insulating antiferromagnetic layer.
SG77708A1 (en) Low moment/high coercivity pinned layer for magnetic tunnel juction sensors
EP1244117A3 (en) Magnetoresistive element, memory element using the magnetorestistive element, and recording/reproduction method for the memory element
AU2002306525A1 (en) Keepers for mram electrodes
EP1231607A3 (en) Nonvolatile magnetic storage device
EP1115164A3 (en) Magnetoresistive device and magnetic memory using the same
TW200733104A (en) A magnetoresistive tunnel junction magnetic device and its application to MRAM
EP1321943A3 (en) Magnetic memory
EP0875901A3 (en) Magnetic thin-film memory element utilizing GMR effect, and magnetic thin-film memory
EP0843368A3 (en) Magnetoresistive film
EP0910092A3 (en) Magnetic thin film memory element and recording/reproduction method using such memory element
EP1248273A3 (en) Cladded read conductor for a tunnel junction memory cell
WO2005079528A3 (en) Spin transfer magnetic element having low saturation magnetization free layers
EP1420411A3 (en) Mram with asymmetric cladded conductor
WO2003107350B1 (en) MAGNETORESISTIVE MEMORY WITH RANDOM ACCESS HAVING REDUCED SWITCHING FIELD
WO2006044244A3 (en) Thermomagnetically assisted spin-momentum-transfer switching memory
KR970071484A (ko) 자기 저항 효과 소자
EP1571713A4 (en) DREHINJECTION DEVICE, MAGNETIC DEVICE USING THE SAME, THE MAGNETIC THIN FILM USED THEREIN