ES2177719T3 - Estructura amplificadora de bajo ruido. - Google Patents

Estructura amplificadora de bajo ruido.

Info

Publication number
ES2177719T3
ES2177719T3 ES96202548T ES96202548T ES2177719T3 ES 2177719 T3 ES2177719 T3 ES 2177719T3 ES 96202548 T ES96202548 T ES 96202548T ES 96202548 T ES96202548 T ES 96202548T ES 2177719 T3 ES2177719 T3 ES 2177719T3
Authority
ES
Spain
Prior art keywords
differential
gain
elevated
common
entry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96202548T
Other languages
English (en)
Inventor
Filip Marcel Louagie
Jean-Philippe Robert Cornil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Nokia Inc
Original Assignee
Alcatel SA
Nokia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel SA, Nokia Inc filed Critical Alcatel SA
Application granted granted Critical
Publication of ES2177719T3 publication Critical patent/ES2177719T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Reduction Or Emphasis Of Bandwidth Of Signals (AREA)

Abstract

SE TRATA DE UN AMPLIFICADOR DE BAJO RUIDO BASADO EN UN AMPLIFICADOR DIFERENCIAL DE DIFERENCIAS (DDA1) QUE CUENTA CON UNA SALIDA DIFERENCIAL (OUTP, OUTN) Y DOS PARES DIFERENCIALES DE TERMINALES DE ENTRADA (N1, P1; N2, P2). LA SEÑAL DE ENTRADA (V SUB,IN}) SE APLICA A TERMINALES (N2, P1) QUE PERTENECEN A PARES DIFERENCIALES DISTINTOS. DE ESTA FORMA, NINGUNO DE LOS PARES DIFERENCIALES RECIBE UNA SEÑAL DE ENTRADA ELEVADA Y, POR ELLO, NINGUNO DE ELLOS PROVOCA UNA DISTORSION ARMONICA INACEPTABLE. DE ESTA FORMA, EL RANGO DINAMICO DE ENTRADA ES ELEVADO. LA GANANCIA DE LA ESTRUCTURA VIENE DETERMINADO POR UN CIRCUITO RESISTENTE (R2A, R2A''; R2B, R2B'') ACOPLADO CON LOS RESTANTES TERMINALES (N1, P2) DE LOS PARES DIFERENCIALES. EL MODO COMUN DE ESTOS TERMINALES RESTANTES (N1, P2) SE DERIVA, INDEPENDIENTEMENTE DEL MODO COMUN DE LA SALIDA, AL MODO COMUN DE ENTRADA MEDIANTE UN CIRCUITO DE REALIMENTACION EN MODO COMUN (DDA2; GL1, GH1, GH3, R2A, R2A''; GL2, GH2, GH4, R2B, R2B'') BASADO EN UN SEGUNDO AMPLIFICADORDIFERENCIAL DE DIFERENCIAS (DDA2). CIERTOS ELEMENTOS DE CONMUTACION (GL1, GH1, GH3; GL2, GH2, GH4) PERMITEN PROGRAMAR LA GANANCIA Y EVITAN QUE EL CIRCUITO DE REALIMENTACION EN MODO COMUN INYECTE RUIDO DIFERENCIAL SI LA GANANCIA ES ELEVADA. ESTA ESTRUCTURA SE ENCUENTRA ADAPTADA PARA AMPLIFICAR SEÑALES DE 1 V SUB,PP} CON UN NIVEL DE DISTORSION ACEPTABLEMENTE BAJO.
ES96202548T 1996-09-13 1996-09-13 Estructura amplificadora de bajo ruido. Expired - Lifetime ES2177719T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96202548A EP0829955B1 (en) 1996-09-13 1996-09-13 Low noise amplifier structure

Publications (1)

Publication Number Publication Date
ES2177719T3 true ES2177719T3 (es) 2002-12-16

Family

ID=8224378

Family Applications (1)

Application Number Title Priority Date Filing Date
ES96202548T Expired - Lifetime ES2177719T3 (es) 1996-09-13 1996-09-13 Estructura amplificadora de bajo ruido.

Country Status (7)

Country Link
US (1) US5861778A (es)
EP (1) EP0829955B1 (es)
JP (1) JP4015237B2 (es)
AT (1) ATE218767T1 (es)
CA (1) CA2214849A1 (es)
DE (1) DE69621614T2 (es)
ES (1) ES2177719T3 (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085958A (ja) * 1999-09-10 2001-03-30 Toshiba Corp 増幅回路
US6292060B1 (en) 1999-09-13 2001-09-18 Chartered Semiconductor Manufacturing Ltd. Technique to generate negative conductance in CMOS tuned cascode RF amplifiers
WO2001035526A2 (en) * 1999-11-09 2001-05-17 That Corporation Improved floating, balanced output circuit
US7126423B1 (en) 2000-11-20 2006-10-24 Sitel Semiconductor B.V. Differential difference amplifier for amplifying small signals close to zero volts
US6400225B1 (en) 2000-11-20 2002-06-04 National Semiconductor Corporation Differential difference amplifier for amplifying small signals close to zero volts
US6996435B2 (en) 2001-11-19 2006-02-07 Neurostream Technologies Inc. Implantable signal amplifying circuit for electroneurographic recording
DE10158709A1 (de) * 2001-11-29 2003-07-03 Infineon Technologies Ag Voll differentieller Differenzverstärker mit hoher Eingangsimpedanz
US7899196B2 (en) * 2004-02-09 2011-03-01 Audioasics A/S Digital microphone
GB2434047A (en) * 2006-01-05 2007-07-11 Chi Ming John Lam A balanced audio valve amplifier with multiple feedback loops
US8120423B2 (en) * 2009-12-23 2012-02-21 Omnivision Technologies, Inc. OP-AMP sharing with input and output reset
CN105656432B (zh) 2014-11-28 2019-06-28 意法半导体股份有限公司 完全平衡微分差分放大器以及包括其的设备
CN117318631B (zh) * 2023-09-27 2025-01-17 石河子大学 一种电容反馈低噪放大器电路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5339285A (en) * 1993-04-12 1994-08-16 The United States Of America As Represented By The Secretary Of The Navy Monolithic low noise preamplifier for piezoelectric sensors
US5327098A (en) * 1993-07-29 1994-07-05 Burr-Brown Corporation Programmable gain amplifier circuitry and method for biasing JFET gain switches thereof

Also Published As

Publication number Publication date
EP0829955B1 (en) 2002-06-05
ATE218767T1 (de) 2002-06-15
US5861778A (en) 1999-01-19
JPH10107559A (ja) 1998-04-24
DE69621614T2 (de) 2003-03-27
JP4015237B2 (ja) 2007-11-28
EP0829955A1 (en) 1998-03-18
DE69621614D1 (de) 2002-07-11
CA2214849A1 (en) 1998-03-13

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