ES2179619T3 - Transistor con efecto de campo. - Google Patents

Transistor con efecto de campo.

Info

Publication number
ES2179619T3
ES2179619T3 ES99905363T ES99905363T ES2179619T3 ES 2179619 T3 ES2179619 T3 ES 2179619T3 ES 99905363 T ES99905363 T ES 99905363T ES 99905363 T ES99905363 T ES 99905363T ES 2179619 T3 ES2179619 T3 ES 2179619T3
Authority
ES
Spain
Prior art keywords
electrode
transistor
insulator
layer
forms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES99905363T
Other languages
English (en)
Inventor
Rolf Magnus Berggren
Bengt Goran Gustafsson
Johan Roger Axel Karlsson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ensurge Micropower ASA
Original Assignee
Thin Film Electronics ASA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NO980224A external-priority patent/NO306528B1/no
Application filed by Thin Film Electronics ASA filed Critical Thin Film Electronics ASA
Application granted granted Critical
Publication of ES2179619T3 publication Critical patent/ES2179619T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H10D30/0516—Manufacture or treatment of FETs having PN junction gates of FETs having PN heterojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)

Abstract

Transistor con efecto de campo, particularmente un transistor con efecto de campo de unión (JEFT) con geometría sustancialmente vertical, en el que el transistor comprende un substrato planar (1) de material no conductor, una capa (2) de material conductor que comprende un primer electrodo incluido en el substrato (1), una capa (3a) de material aislante que forma un primer aislante que se encuentra sobre el primer electrodo (2), una capa de material conductor (4) que forma un segundo electrodo que se encuentra sobre el primer aislante (3a), otra capa (3b) de material aislante que forma un segundo aislante que se encuentra sobre el segundo electrodo (4), una capa (5) de material conductor que forma un tercer electrodo sobre el segundo aislante (3b), comprendiendo los citados primero (2) y tercer electrodos (5) respectivamente el electrodo de vaciado y el de origen del transistor o viceversa, y el citado segundo electrodo (4) el electrodo de compuerta del transistor, por lo menos los citadossegundo electrodo (4) y el citado tercer electrodo (5), y los citados primero (3a) y segundo aislante (3b) con sus respectivas capas en configuración apilada formando un escalón (6) orientado en vertical respecto al citado primer electrodo (2) y/o el mencionado substrato (1), y un material semiconductor (8) que realiza el semiconductor activo del transistor que se proporciona sobre la parte expuesta del mencionado primer electrodo (2), el mencionado segundo electrodo (4) y el mencionado tercer electrodo (5), contactando el citado semiconductor activo (8) con el electrodo de compuerta (4) directamente y formando un canal de transistor de orientación sustancialmente vertical (9) entre los citados electrodos primero (2) y tercero (5).
ES99905363T 1998-01-16 1999-01-14 Transistor con efecto de campo. Expired - Lifetime ES2179619T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO980224A NO306528B1 (no) 1998-01-16 1998-01-16 Felteffekttransistor
NO985472A NO306529B1 (no) 1998-01-16 1998-11-23 Transistor

Publications (1)

Publication Number Publication Date
ES2179619T3 true ES2179619T3 (es) 2003-01-16

Family

ID=26648813

Family Applications (1)

Application Number Title Priority Date Filing Date
ES99905363T Expired - Lifetime ES2179619T3 (es) 1998-01-16 1999-01-14 Transistor con efecto de campo.

Country Status (14)

Country Link
US (1) US6429457B1 (es)
EP (1) EP1051754B1 (es)
JP (1) JP3495703B2 (es)
KR (1) KR100368818B1 (es)
CN (1) CN1210808C (es)
AT (1) ATE222027T1 (es)
AU (1) AU732134C (es)
CA (1) CA2317759C (es)
DE (1) DE69902441T2 (es)
DK (1) DK1051754T3 (es)
ES (1) ES2179619T3 (es)
NO (1) NO306529B1 (es)
RU (1) RU2189665C2 (es)
WO (1) WO1999040631A1 (es)

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Also Published As

Publication number Publication date
WO1999040631A1 (en) 1999-08-12
JP3495703B2 (ja) 2004-02-09
CN1210808C (zh) 2005-07-13
AU732134B2 (en) 2001-04-12
DE69902441T2 (de) 2003-04-17
US6429457B1 (en) 2002-08-06
ATE222027T1 (de) 2002-08-15
DE69902441D1 (de) 2002-09-12
JP2002503035A (ja) 2002-01-29
NO306529B1 (no) 1999-11-15
DK1051754T3 (da) 2002-09-02
NO985472L (no) 1999-07-19
EP1051754B1 (en) 2002-08-07
RU2189665C2 (ru) 2002-09-20
KR20010034186A (ko) 2001-04-25
KR100368818B1 (ko) 2003-01-24
CA2317759A1 (en) 1999-08-12
AU2552099A (en) 1999-08-23
CA2317759C (en) 2004-06-22
NO985472D0 (no) 1998-11-23
EP1051754A1 (en) 2000-11-15
CN1293825A (zh) 2001-05-02
AU732134C (en) 2001-11-22

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