ES2184249T3 - Procedimiento de sinterizado de diamantes y desarrollo de cristales de diamante. - Google Patents

Procedimiento de sinterizado de diamantes y desarrollo de cristales de diamante.

Info

Publication number
ES2184249T3
ES2184249T3 ES98917386T ES98917386T ES2184249T3 ES 2184249 T3 ES2184249 T3 ES 2184249T3 ES 98917386 T ES98917386 T ES 98917386T ES 98917386 T ES98917386 T ES 98917386T ES 2184249 T3 ES2184249 T3 ES 2184249T3
Authority
ES
Spain
Prior art keywords
diamond
crystals
diamond crystals
mass
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES98917386T
Other languages
English (en)
Inventor
James Wilbert Campbell
Moosa Mahomed Adia
Geoffrey John Davies
Raymond Albert Chapman
Klaus Tank
Aulette Stewart
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
De Beers Industrial Diamond Division Pty Ltd
Original Assignee
De Beers Industrial Diamond Division Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Industrial Diamond Division Pty Ltd filed Critical De Beers Industrial Diamond Division Pty Ltd
Application granted granted Critical
Publication of ES2184249T3 publication Critical patent/ES2184249T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/062—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/0685—Crystal sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Liquid Crystal Substances (AREA)

Abstract

La invención se refiere a un procedimiento para fabricar un material unido y coherente que incluye una masa de cristales de diamante en una matriz, que opcionalmente contiene otra fase. El procedimiento incluye otros pasos para crear una fuente de cristales de diamante, proporcionar una pluralidad de centros de diamante definidos por cristales de diamante, introducir una masa reaccionante mediante la puesta en contacto de la fuente y de los centros de crecimiento con un solvente/catalizador, someter la masa reaccionante a condiciones de elevada temperatura y presión adecuadas para el crecimiento de los cristales en la zona de reacción de un aparato alta temperatura/alta presión para producir el material, y retirar los materiales de la zona de reacción. El procedimiento se caracteriza porque proporciona la supersaturación necesaria de carbón en el solvente/catalizador, al menos en parte y preferiblemente predominantemente, mediante la selección de la diferencia de tamaño de partículas entrela fuente de cristales y la de los centros de crecimiento. La masa de cristales de diamantes en la matriz del material aglomerado coherente de la invención tiene una alta concentración de mezclas de cristales de diamante.
ES98917386T 1997-04-17 1998-04-16 Procedimiento de sinterizado de diamantes y desarrollo de cristales de diamante. Expired - Lifetime ES2184249T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA973284 1997-04-17
ZA973283 1998-04-16

Publications (1)

Publication Number Publication Date
ES2184249T3 true ES2184249T3 (es) 2003-04-01

Family

ID=27143809

Family Applications (1)

Application Number Title Priority Date Filing Date
ES98917386T Expired - Lifetime ES2184249T3 (es) 1997-04-17 1998-04-16 Procedimiento de sinterizado de diamantes y desarrollo de cristales de diamante.

Country Status (12)

Country Link
US (1) US6270548B1 (es)
EP (1) EP0975423B1 (es)
JP (1) JP3814303B2 (es)
KR (1) KR100503541B1 (es)
CN (1) CN1119200C (es)
AT (1) ATE224228T1 (es)
AU (1) AU7062698A (es)
DE (1) DE69808064T2 (es)
ES (1) ES2184249T3 (es)
TW (1) TW453895B (es)
WO (1) WO1998046344A1 (es)
ZA (1) ZA983195B (es)

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ATE208654T1 (de) * 1997-04-17 2001-11-15 De Beers Ind Diamond Diamant-züchtung
AU1496599A (en) * 1997-12-11 1999-06-28 De Beers Industrial Diamond Division (Proprietary) Limited Crystal growth
KR100572418B1 (ko) * 1997-12-11 2006-04-18 드 비어스 인더스트리얼 다이아몬즈 (프로프라이어터리) 리미티드 결정을 함유한 물질
CA2412904A1 (en) * 2000-06-13 2001-12-20 Element Six (Pty) Ltd. Composite diamond compacts
CA2419752A1 (en) * 2002-02-26 2003-08-26 Smith International, Inc. Elongate ultra hard particle reinforced ultra hard materials and ceramics, tools and parts incorporating the same, and method of making the same
AU2003284017A1 (en) * 2002-10-08 2004-05-04 John N. Hatleberg Synthetic diamonds prepared from roses
US20060249308A1 (en) * 2003-02-11 2006-11-09 Klaus Tank Cutting element
EP1735237A4 (en) * 2004-04-14 2009-02-25 John N Hatleberg SYNTHETIC DIAMONDS MANUFACTURED FROM ORGANIC SUBSTANCES
WO2007017745A1 (en) * 2005-08-11 2007-02-15 Element Six (Production) (Pty) Ltd Polycrystalline diamond abrasive element and method of its production
US9103172B1 (en) 2005-08-24 2015-08-11 Us Synthetic Corporation Polycrystalline diamond compact including a pre-sintered polycrystalline diamond table including a nonmetallic catalyst that limits infiltration of a metallic-catalyst infiltrant therein and applications therefor
US8734552B1 (en) * 2005-08-24 2014-05-27 Us Synthetic Corporation Methods of fabricating polycrystalline diamond and polycrystalline diamond compacts with a carbonate material
US20100009839A1 (en) * 2006-06-09 2010-01-14 Antionette Can Ultrahard Composite Materials
US9017438B1 (en) 2006-10-10 2015-04-28 Us Synthetic Corporation Polycrystalline diamond compact including a polycrystalline diamond table with a thermally-stable region having at least one low-carbon-solubility material and applications therefor
US8236074B1 (en) 2006-10-10 2012-08-07 Us Synthetic Corporation Superabrasive elements, methods of manufacturing, and drill bits including same
US8080074B2 (en) 2006-11-20 2011-12-20 Us Synthetic Corporation Polycrystalline diamond compacts, and related methods and applications
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US20100285335A1 (en) * 2007-02-05 2010-11-11 Humphrey Samkelo Lungisani Sithebe Polycrystalline diamond (pcd) materials
CA2619547C (en) 2007-02-06 2016-05-17 Smith International, Inc. Polycrystalline diamond constructions having improved thermal stability
GB0704516D0 (en) * 2007-03-08 2007-04-18 Element Six Ltd Diamond
US9297211B2 (en) 2007-12-17 2016-03-29 Smith International, Inc. Polycrystalline diamond construction with controlled gradient metal content
US8999025B1 (en) 2008-03-03 2015-04-07 Us Synthetic Corporation Methods of fabricating a polycrystalline diamond body with a sintering aid/infiltrant at least saturated with non-diamond carbon and resultant products such as compacts
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US8384007B2 (en) 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
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US20100104874A1 (en) * 2008-10-29 2010-04-29 Smith International, Inc. High pressure sintering with carbon additives
CA2760944A1 (en) 2009-05-06 2010-11-11 Smith International, Inc. Methods of making and attaching tsp material for forming cutting elements, cutting elements having such tsp material and bits incorporating such cutting elements
US8496076B2 (en) 2009-10-15 2013-07-30 Baker Hughes Incorporated Polycrystalline compacts including nanoparticulate inclusions, cutting elements and earth-boring tools including such compacts, and methods of forming such compacts
US8579052B2 (en) * 2009-08-07 2013-11-12 Baker Hughes Incorporated Polycrystalline compacts including in-situ nucleated grains, earth-boring tools including such compacts, and methods of forming such compacts and tools
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CA2770847A1 (en) * 2009-08-18 2011-02-24 Baker Hughes Incorporated Methods of forming polycrystalline diamond elements, polycrystalline diamond elements, and earth-boring tools carrying such polycrystalline diamond elements
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CN102674840B (zh) * 2012-06-08 2013-12-18 河南理工大学 一种金刚石-硅材料的快速烧结制备方法
CN103482623B (zh) * 2013-09-05 2015-06-24 大连理工大学 一种用直流电弧法制备纳米金刚石的方法
CN105233759A (zh) * 2015-09-29 2016-01-13 河南飞孟金刚石工业有限公司 一种晶种法提高多晶金刚石产能的合成工艺
CN108101031A (zh) * 2017-12-22 2018-06-01 燕山大学 一种金刚石微粉表面原位生长石墨烯层的制备方法
TWI899117B (zh) * 2019-12-11 2025-10-01 美商戴蒙創新公司 多晶鑽石複合片；胚料、切刀與包括其之切割工具；及製造方法

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Also Published As

Publication number Publication date
JP3814303B2 (ja) 2006-08-30
AU7062698A (en) 1998-11-11
EP0975423A1 (en) 2000-02-02
CN1119200C (zh) 2003-08-27
WO1998046344A1 (en) 1998-10-22
KR100503541B1 (ko) 2005-07-26
CN1260733A (zh) 2000-07-19
US6270548B1 (en) 2001-08-07
ZA983195B (en) 1998-10-21
DE69808064T2 (de) 2003-05-22
ATE224228T1 (de) 2002-10-15
JP2002500551A (ja) 2002-01-08
KR20010006439A (ko) 2001-01-26
DE69808064D1 (de) 2002-10-24
TW453895B (en) 2001-09-11
EP0975423B1 (en) 2002-09-18

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