ES2184447T3 - Perovskita de abo3 con escalon. - Google Patents

Perovskita de abo3 con escalon.

Info

Publication number
ES2184447T3
ES2184447T3 ES99919032T ES99919032T ES2184447T3 ES 2184447 T3 ES2184447 T3 ES 2184447T3 ES 99919032 T ES99919032 T ES 99919032T ES 99919032 T ES99919032 T ES 99919032T ES 2184447 T3 ES2184447 T3 ES 2184447T3
Authority
ES
Spain
Prior art keywords
abo3
perovskita
scale
substrate
folded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES99919032T
Other languages
English (en)
Inventor
Wolfgang Speier
Kristof Szot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
Original Assignee
Forschungszentrum Juelich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH filed Critical Forschungszentrum Juelich GmbH
Application granted granted Critical
Publication of ES2184447T3 publication Critical patent/ES2184447T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Peptides Or Proteins (AREA)
  • Saccharide Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
  • Stringed Musical Instruments (AREA)
  • Laminated Bodies (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Ceramic Capacitors (AREA)

Abstract

Procedimiento para fabricar un substrato de ABO3 con un escalón, en el que se dobla un substrato de ABO3 en la zona de trabajo plástico.
ES99919032T 1998-03-03 1999-02-25 Perovskita de abo3 con escalon. Expired - Lifetime ES2184447T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19808778A DE19808778C2 (de) 1998-03-03 1998-03-03 Verfahren zur Herstellung eines ABO¶3¶-Substrates mit einer Stufe

Publications (1)

Publication Number Publication Date
ES2184447T3 true ES2184447T3 (es) 2003-04-01

Family

ID=7859403

Family Applications (1)

Application Number Title Priority Date Filing Date
ES99919032T Expired - Lifetime ES2184447T3 (es) 1998-03-03 1999-02-25 Perovskita de abo3 con escalon.

Country Status (6)

Country Link
EP (1) EP1060300B1 (es)
AT (1) ATE223980T1 (es)
DE (2) DE19808778C2 (es)
DK (1) DK1060300T3 (es)
ES (1) ES2184447T3 (es)
WO (1) WO1999045180A2 (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12247317B2 (en) 2019-09-04 2025-03-11 The Johns Hopkins University Functional metal oxides and methods of making same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0763100B2 (ja) * 1986-05-21 1995-07-05 日本電信電話株式会社 ジヨセフソン接合素子及びその製法
JPH02192172A (ja) * 1989-01-19 1990-07-27 Fujitsu Ltd 超伝導トランジスタ
US5612545A (en) * 1991-12-23 1997-03-18 Sumitomo Electric Industries, Ltd. Superconducting quantum interference device formed of oxide superconductor thin film
JPH04234180A (ja) * 1990-12-28 1992-08-21 Sumitomo Electric Ind Ltd 超電導量子干渉素子
JPH05251771A (ja) * 1991-12-02 1993-09-28 Sumitomo Electric Ind Ltd 人工粒界型ジョセフソン接合素子およびその作製方法
CA2084264C (en) * 1991-12-02 1996-11-26 Takao Nakamura Josephson junction device formed of oxide superconductor material and process for preparing the same
JPH05335638A (ja) * 1992-05-29 1993-12-17 Sumitomo Electric Ind Ltd ジョセフソン接合構造体およびその作製方法
JP3568547B2 (ja) * 1992-05-29 2004-09-22 住友電気工業株式会社 ジョセフソン接合構造体
KR100264006B1 (ko) * 1993-11-29 2000-08-16 이형도 고온초전도 조셉슨소자의 제조방법
FI111198B (fi) * 1993-12-27 2003-06-13 Sumitomo Electric Industries Menetelmä portaan muodostamiseksi substraatin kasvatuspinnalle oksidisuprajohdetta käyttävää suprajohtavaa laitetta varten sekä menetelmä porrastyyppisen Josephson-liitoslaitteen valmistamiseksi
JPH07240543A (ja) * 1994-02-25 1995-09-12 Sumitomo Electric Ind Ltd 成膜用基板に段差を形成する方法
DE19608564C2 (de) * 1996-03-07 1999-09-02 Forschungszentrum Juelich Gmbh Supraleiter/Halbleiter/ Supraleiter-Stufenkontakt

Also Published As

Publication number Publication date
ATE223980T1 (de) 2002-09-15
WO1999045180A3 (de) 1999-10-07
DE19808778C2 (de) 1999-12-09
EP1060300B1 (de) 2002-09-11
DE19808778A1 (de) 1999-09-09
DE59902652D1 (de) 2002-10-17
DK1060300T3 (da) 2003-01-20
WO1999045180A2 (de) 1999-09-10
EP1060300A2 (de) 2000-12-20

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