ES2193368T3 - Soporte de obla electrostatico con realimentacion dinamica. - Google Patents

Soporte de obla electrostatico con realimentacion dinamica.

Info

Publication number
ES2193368T3
ES2193368T3 ES97917540T ES97917540T ES2193368T3 ES 2193368 T3 ES2193368 T3 ES 2193368T3 ES 97917540 T ES97917540 T ES 97917540T ES 97917540 T ES97917540 T ES 97917540T ES 2193368 T3 ES2193368 T3 ES 2193368T3
Authority
ES
Spain
Prior art keywords
electrostatic
level
oblea
direct current
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES97917540T
Other languages
English (en)
Inventor
Phillip L Jones
Seyed Jafar Jafarian-Tehrani
Boris V Atlas
Liu David R Chen
Ken E Tokunaga
Ching-Hwa Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of ES2193368T3 publication Critical patent/ES2193368T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Jigs For Machine Tools (AREA)
  • Measuring Fluid Pressure (AREA)
  • Gyroscopes (AREA)

Abstract

LA PRESENTE INVENCION SE REFIERE A UN SISTEMA DE SOPORTE ELECTROSTATICO PARA SUJETAR DE FORMA SEGURA UNA OBLEA (108) SOBRE UNA SUPERFICIE DEL SOPORTE ELECTROSTATICO (302), SISTEMA QUE CONSTA DE UN SENSOR (400) DE SESGO DE OBLEAS ACOPLADO A UNA PRIMERA PARTE DEL SOPORTE ELECTROSTATICO PARA DETECTAR UNA SEÑAL CORRIENTE ELECTROSTATICA ALTERNANTE EN LA PRIMERA PARTE. EL SENSOR PRODUCE COMO RESULTADO, EN RESPUESTA A LA SEÑAL DE CORRIENTE ALTERNANTE, UN NIVEL DE TENSION DE CORRIENTE DIRECTA QUE REPRESENTA UN NIVEL DE SESGO DE CORRIENTE DIRECTA DE LA OBLEA, Y ESTA ACOPLADO A UNA FUENTE DE ENERGIA VARIABLE (412) QUE PROPORCIONA UN PRIMER NIVEL DE POTENCIAL A LA PRIMERA PARTE DEL SOPORTE ELECTROSTATICO. EL PRIMER NIVEL DE POTENCIAL SE MODIFICA, EN RESPUESTA AL NIVEL DE TENSION DE CORRIENTE DIRECTA, PARA MANTENER DE FORMA SUSTANCIAL UNA PRIMERA DIFERENCIA DE POTENCIAL PREDEFINIDA ENTRE LA PRIMERA PARTE DEL SOPORTE ELECTROSTATICO Y UNA PRIMERA REGION DE LA OBLEA QUE SE SUPERPONE A LA PRIMERA PARTE, CON INDEPENDENCIA DE LA MAGNITUD DEL SESGO DE LA CORRIENTE DIRECTA DE LA OBLEA.
ES97917540T 1996-03-29 1997-03-19 Soporte de obla electrostatico con realimentacion dinamica. Expired - Lifetime ES2193368T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/624,988 US5812361A (en) 1996-03-29 1996-03-29 Dynamic feedback electrostatic wafer chuck

Publications (1)

Publication Number Publication Date
ES2193368T3 true ES2193368T3 (es) 2003-11-01

Family

ID=24504135

Family Applications (1)

Application Number Title Priority Date Filing Date
ES97917540T Expired - Lifetime ES2193368T3 (es) 1996-03-29 1997-03-19 Soporte de obla electrostatico con realimentacion dinamica.

Country Status (9)

Country Link
US (1) US5812361A (es)
EP (1) EP0890189B1 (es)
JP (1) JP4299368B2 (es)
AT (1) ATE233432T1 (es)
AU (1) AU2583197A (es)
DE (1) DE69719316T2 (es)
ES (1) ES2193368T3 (es)
IL (1) IL126394A (es)
WO (1) WO1997037382A1 (es)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5737177A (en) * 1996-10-17 1998-04-07 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal
JP3245369B2 (ja) * 1996-11-20 2002-01-15 東京エレクトロン株式会社 被処理体を静電チャックから離脱する方法及びプラズマ処理装置
JP3954177B2 (ja) * 1997-01-29 2007-08-08 日本碍子株式会社 金属部材とセラミックス部材との接合構造およびその製造方法
US5835335A (en) * 1997-03-26 1998-11-10 Lam Research Corporation Unbalanced bipolar electrostatic chuck power supplies and methods thereof
US5894400A (en) * 1997-05-29 1999-04-13 Wj Semiconductor Equipment Group, Inc. Method and apparatus for clamping a substrate
US6198616B1 (en) * 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
WO1999060613A2 (en) * 1998-05-21 1999-11-25 Applied Materials, Inc. Method and apparatus for minimizing plasma destabilization within a semiconductor wafer processing system
US6346428B1 (en) * 1998-08-17 2002-02-12 Tegal Corporation Method and apparatus for minimizing semiconductor wafer arcing during semiconductor wafer processing
US6228278B1 (en) * 1998-09-30 2001-05-08 Lam Research Corporation Methods and apparatus for determining an etch endpoint in a plasma processing system
US6361645B1 (en) * 1998-10-08 2002-03-26 Lam Research Corporation Method and device for compensating wafer bias in a plasma processing chamber
US6215640B1 (en) * 1998-12-10 2001-04-10 Applied Materials, Inc. Apparatus and method for actively controlling surface potential of an electrostatic chuck
US6188564B1 (en) 1999-03-31 2001-02-13 Lam Research Corporation Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber
KR20010007406A (ko) 1999-06-17 2001-01-26 조셉 제이. 스위니 정전 처크에 의해 발생한 정전력 균형을 맞추는 방법 및장치
JP3437961B2 (ja) 2000-05-26 2003-08-18 東京エレクトロン株式会社 基板のプラズマ処理中に基板のバイアスを監視するための改善された装置および方法
US6476623B1 (en) 2000-09-21 2002-11-05 Motorola, Inc. Percent backsputtering as a control parameter for metallization
US6913670B2 (en) * 2002-04-08 2005-07-05 Applied Materials, Inc. Substrate support having barrier capable of detecting fluid leakage
US20040031699A1 (en) * 2002-08-19 2004-02-19 Applied Materials, Inc. Method for performing real time arcing detection
US7208067B2 (en) * 2003-03-27 2007-04-24 Tokyo Electron Limited Method and system for monitoring RF impedance to determine conditions of a wafer on an electrostatic chuck
US7264676B2 (en) * 2003-09-11 2007-09-04 United Microelectronics Corp. Plasma apparatus and method capable of adaptive impedance matching
US7988816B2 (en) 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
US7740737B2 (en) 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
US7457097B2 (en) * 2004-07-27 2008-11-25 International Business Machines Corporation Pressure assisted wafer holding apparatus and control method
DE102006013517A1 (de) * 2006-03-23 2007-09-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur elektrostatischen Fixierung von Substraten mit polarisierbaren Molekülen
US7777152B2 (en) * 2006-06-13 2010-08-17 Applied Materials, Inc. High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
JP2010010214A (ja) * 2008-06-24 2010-01-14 Oki Semiconductor Co Ltd 半導体装置の製造方法、半導体製造装置、及び記憶媒体
US8169769B2 (en) * 2008-09-11 2012-05-01 Tel Epion Inc. Electrostatic chuck power supply
US7851233B2 (en) 2009-03-26 2010-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. E-chuck for automated clamped force adjustment and calibration
US8901935B2 (en) * 2009-11-19 2014-12-02 Lam Research Corporation Methods and apparatus for detecting the confinement state of plasma in a plasma processing system
US8501631B2 (en) * 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
US8909365B2 (en) * 2009-11-19 2014-12-09 Lam Research Corporation Methods and apparatus for controlling a plasma processing system
JP5643062B2 (ja) * 2009-11-24 2014-12-17 東京エレクトロン株式会社 プラズマ処理装置
SG183904A1 (en) 2010-04-02 2012-10-30 Ulvac Inc Sputtering apparatus and sputtering method
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9502216B2 (en) * 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9107284B2 (en) 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
US10236202B2 (en) * 2013-11-11 2019-03-19 Diablo Capital, Inc. System and method for adhering a semiconductive wafer to a mobile electrostatic carrier through a vacuum
US9754809B2 (en) * 2013-11-11 2017-09-05 Western Alliance Bank Tri-modal carrier for a semiconductive wafer
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9872341B2 (en) 2014-11-26 2018-01-16 Applied Materials, Inc. Consolidated filter arrangement for devices in an RF environment
WO2016094404A1 (en) * 2014-12-11 2016-06-16 Applied Materials, Inc. Electrostatic chuck for high temperature rf applications
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
KR101719260B1 (ko) * 2015-11-03 2017-03-23 (주)파웰이엔지 스마트 정전 척, 그를 포함하는 기판 처리 장치, 및 그의 통신 모듈 구동 방법
US10026592B2 (en) 2016-07-01 2018-07-17 Lam Research Corporation Systems and methods for tailoring ion energy distribution function by odd harmonic mixing
US11114326B2 (en) 2017-09-08 2021-09-07 Applied Materials, Inc. Substrate chucking and dechucking methods
JP7059064B2 (ja) 2018-03-26 2022-04-25 株式会社日立ハイテク プラズマ処理装置
US11476145B2 (en) * 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
TWI796593B (zh) 2019-09-06 2023-03-21 美商應用材料股份有限公司 用於不同基板的共同靜電吸盤
CN112234015B (zh) 2020-10-12 2022-05-13 烟台睿瓷新材料技术有限公司 一种同心圆结构的静电吸盘电极图形结构
WO2022235499A1 (en) * 2021-05-03 2022-11-10 Lam Research Corporation Wafer state detection
US12217937B2 (en) * 2022-03-13 2025-02-04 Applied Materials, Inc. Radio frequency source for inductively coupled and capacitively coupled plasmas in substrate processing chambers

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1443215A (en) * 1973-11-07 1976-07-21 Mullard Ltd Electrostatically clamping a semiconductor wafer during device manufacture
US4184188A (en) * 1978-01-16 1980-01-15 Veeco Instruments Inc. Substrate clamping technique in IC fabrication processes
US4384918A (en) * 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
JPS5816078A (ja) * 1981-07-17 1983-01-29 Toshiba Corp プラズマエツチング装置
GB2106325A (en) * 1981-09-14 1983-04-07 Philips Electronic Associated Electrostatic chuck
GB2147459A (en) * 1983-09-30 1985-05-09 Philips Electronic Associated Electrostatic chuck for semiconductor wafers
GB2154365A (en) * 1984-02-10 1985-09-04 Philips Electronic Associated Loading semiconductor wafers on an electrostatic chuck
US4464223A (en) * 1983-10-03 1984-08-07 Tegal Corp. Plasma reactor apparatus and method
US4692836A (en) * 1983-10-31 1987-09-08 Toshiba Kikai Kabushiki Kaisha Electrostatic chucks
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
JPS6131636U (ja) * 1984-07-31 1986-02-26 株式会社 徳田製作所 静電チヤツク
JPH0697676B2 (ja) * 1985-11-26 1994-11-30 忠弘 大見 ウエハサセプタ装置
JP2513995B2 (ja) * 1985-12-29 1996-07-10 京セラ株式会社 静電チヤツク
US4724510A (en) * 1986-12-12 1988-02-09 Tegal Corporation Electrostatic wafer clamp
US4842683A (en) * 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US5103367A (en) * 1987-05-06 1992-04-07 Unisearch Limited Electrostatic chuck using A.C. field excitation
JPH06104898B2 (ja) * 1988-01-13 1994-12-21 忠弘 大見 減圧表面処理装置
JP2680338B2 (ja) * 1988-03-31 1997-11-19 株式会社東芝 静電チャック装置
DE68909665T2 (de) * 1988-04-26 1994-02-10 Toto Ltd Verfahren zur Herstellung dielektrischer Keramik für elektrostatische Haltevorrichtungen.
JP2665242B2 (ja) * 1988-09-19 1997-10-22 東陶機器株式会社 静電チャック
JP2890432B2 (ja) * 1989-01-10 1999-05-17 富士通株式会社 有機物の灰化方法
US4962441A (en) * 1989-04-10 1990-10-09 Applied Materials, Inc. Isolated electrostatic wafer blade clamp
JP2779950B2 (ja) * 1989-04-25 1998-07-23 東陶機器株式会社 静電チャックの電圧印加方法および電圧印加装置
JP2694668B2 (ja) * 1989-05-30 1997-12-24 日本真空技術株式会社 基板保持装置
JPH03147843A (ja) * 1989-11-06 1991-06-24 Toto Ltd 静電チャックの製造方法
JPH03147844A (ja) * 1989-11-06 1991-06-24 Toto Ltd 静電チャックの製造方法
JP3129452B2 (ja) * 1990-03-13 2001-01-29 富士電機株式会社 静電チャック
US5179498A (en) * 1990-05-17 1993-01-12 Tokyo Electron Limited Electrostatic chuck device
US5055964A (en) * 1990-09-07 1991-10-08 International Business Machines Corporation Electrostatic chuck having tapered electrodes
US5191506A (en) * 1991-05-02 1993-03-02 International Business Machines Corporation Ceramic electrostatic chuck
US5325261A (en) * 1991-05-17 1994-06-28 Unisearch Limited Electrostatic chuck with improved release
US5350479A (en) * 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
JP3167820B2 (ja) * 1993-01-29 2001-05-21 東京エレクトロン株式会社 異常放電検出方法
KR100290748B1 (ko) * 1993-01-29 2001-06-01 히가시 데쓰로 플라즈마 처리장치
US5326725A (en) * 1993-03-11 1994-07-05 Applied Materials, Inc. Clamping ring and susceptor therefor
JP3306677B2 (ja) * 1993-05-12 2002-07-24 東京エレクトロン株式会社 自己バイアス測定方法及び装置並びに静電吸着装置
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
US5463525A (en) * 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
US5535507A (en) * 1993-12-20 1996-07-16 International Business Machines Corporation Method of making electrostatic chuck with oxide insulator
US5467249A (en) * 1993-12-20 1995-11-14 International Business Machines Corporation Electrostatic chuck with reference electrode
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
US5587045A (en) * 1995-04-27 1996-12-24 International Business Machines Corporation Gettering of particles from an electro-negative plasma with insulating chuck

Also Published As

Publication number Publication date
EP0890189B1 (en) 2003-02-26
WO1997037382A1 (en) 1997-10-09
IL126394A0 (en) 1999-05-09
DE69719316T2 (de) 2003-12-11
AU2583197A (en) 1997-10-22
JP4299368B2 (ja) 2009-07-22
IL126394A (en) 2001-08-08
EP0890189A1 (en) 1999-01-13
US5812361A (en) 1998-09-22
JP2000507745A (ja) 2000-06-20
ATE233432T1 (de) 2003-03-15
DE69719316D1 (de) 2003-04-03

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