ES2546845T3 - Método de producción de dispositivos orgánicos - Google Patents
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- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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Abstract
Un proceso para la producción de un dispositivo orgánico que comprende las etapas de: formar una sección de transporte de electrones por codeposición de un complejo de litio de (8-quinolinolato) que contiene un ión litio y batocuproina como una capa mixta y por deposición en vacío de aluminio sobre la capa mixta, en donde la batocuproina está en el estado de aniones radicales en la sección de transporte de electrones; poner en contacto, a través de laminación o mezcla por codeposición, un compuesto orgánico que tiene un potencial de ionización de menos de 5.7 eV y una propiedad de donante de electrones y una sustancia inorgánica u orgánica capaz de formar un complejo para transferencia de carga por su reacción de oxidación-reducción con el compuesto orgánico donante de electrones para formar adyacente a la sección de transporte de electrones una sección de transporte de huecos en la cual el compuesto orgánico donante de electrones está en el estado de cationes radicales.
Description
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(A/cm2) con respecto a los dispositivos de acuerdo con el Ejemplo 5 de la presente invención y los dispositivos comparativos;
La figura 16 es una gráfica que muestra la curva característica de longitud de onda (nm) – transmitancia (%) con respecto al dispositivo de prueba para uso en la determinación de una absorbancia y el dispositivo de prueba comparativo;
La figura 17 es una gráfica que muestra la curva característica de longitud de onda (nm) – absorbancia con respecto al dispositivo de prueba para uso en la determinación de una absorbancia y el dispositivo de prueba comparativo;
La figura 18 es una vista en sección transversal que muestra esquemáticamente la estructura del dispositivo orgánico EL de acuerdo con el Ejemplo 6 de la presente invención;
La figura 19 es una vista en sección transversal que muestra esquemáticamente la estructura del dispositivo orgánico EL de acuerdo con el Ejemplo 7 de la presente invención;
La figura 20 es una vista en sección transversal que muestra esquemáticamente la estructura del dispositivo orgánico EL de acuerdo con el Ejemplo 7 de la presente invención;
La figura 21 es una vista en sección transversal que muestra esquemáticamente la estructura del dispositivo orgánico EL de la técnica anterior que tiene una estructura FET;
La figura 22 es una vista en sección transversal que muestra esquemáticamente la estructura del dispositivo orgánico EL que tiene la estructura FET de acuerdo con el Ejemplo 9 de la presente invención;
La figura 23 es otra vista en sección transversal que muestra esquemáticamente la estructura del dispositivo orgánico EL que tiene la estructura FET de acuerdo con el Ejemplo 9 de la presente invención;
La figura 24 es una gráfica que muestra los resultados de la prueba de simulación en la cual una variación de la eficiencia de conversión de potencia (lm/W) con diferente luminancia cuando las estructuras del dispositivo orgánico convencional EL fueron apiladas a través de una capa de generación de carga a 2 unidades (n=1), 5 unidades (n=4)
o 10 unidades (n=9) en donde n designa un número de las capas de generación de carga aplicadas;
La figura 25 es un diagrama de bandas del dispositivo orgánico MPE EL que tiene dos unidades emisoras de luz obtenidas con la aplicación del voltaje de guía de V1 + V2 + ∆V y que ignora las barreras de inyección desde el cátodo y el ánodo; y
La figura 26 es un diagrama de banda del dispositivo orgánico MPE EL que tiene dos unidades emisoras de luz obtenidas con la aplicación de un voltaje de guía de V1 + V2 y el cual ignora las barreras de inyección desde el cátodo y el ánodo.
Descripción de las realizaciones preferidas
[Primera realización]
En la primera realización de la presente invención, un complejo de litio de (8-quinolinolato) (de aquí en adelante, denominado como “Liq”) representado por la siguiente fórmula:
se utiliza como un compuesto organometálico que contiene iones de metales de baja función de trabajo (por ejemplo, metales alcalinos) que tienen una función de trabajo de no más de 4.0 eV, típicamente iones de metales
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De acuerdo con el método descrito en este ejemplo, puede producirse el dispositivo 260 orgánico EL que tiene una relación de contraste alta, porque una porción de las luces rojas generadas en la capa 63 de emisión de luz consistente de DCJTB:Alq las cuales son trasmitidas en la dirección de un cátodo 69 de Al pueden ser absorbidas controlando un espesor de capa de las capas (CuPc / V2O5:CuPc).
Además, cuando los pigmentos usados tienen una propiedad de transporte de huecos, y una capacidad de absorción de luz en la región de longitud de onda específica como en los pigmentos de quinacridona o derivados de los mismos descritos en "39th lecture meeting, Associate of Society of Applied Physics, Preprint 28p-Q-9, p.1036 (1992)", o pigmentos de indantreno descritos en la Solicitud de Patente Japonesa sin examen No. 2000-58267, tales pigmentos pueden ser utilizados de manera adecuada solos o por laminación o mezcla, mientras que se utiliza la estructura del dispositivo de la presente invención, para formar una capa de corriente de hueco (sección de transporte de hueco) que entra en contacto con el cátodo reflector de luz.
Puesto que sustancialmente todas las moléculas orgánicas de tal tipo de pigmentos tienen una propiedad de transporte de huecos, no pueden ser usadas desde luego cuando una sustancia de transporte de electrones es indispensable como capa que entra en contacto con el cátodo como sucede en los dispositivos orgánicos EL convencionales (que no tienen capa de conversión de corriente de hueco-electrones).
Ejemplo 7
El ejemplo 7 describe la aplicación de un dispositivo orgánico de la presente invención a una formación de una capa de reducción de daño durante un proceso de formación de capa con partículas de alta energía.
Es sabido en el campo de los dispositivos orgánicos de EL que el método de deposición de partículas de alta energía tal como deposición por haces de electrones o deposición por dispersión pueden utilizarse en la formación de cátodos. Adicionalmente, el inventor ha divulgado en la Solicitud de Patente Japonesa sin examen No. 2002332567 (Solicitud de Patente Japonesa No. 2001-1426729) que los electrones pueden ser inyectados fácilmente desde un cátodo de un dispositivo orgánico EL, incluso cuando se utiliza el ITO que tiene una alta función de trabajo como cátodo de inyección de electrones, si la capa de dopaje metálico descrita anteriormente es utilizada como capa de inyección de electrones (en contacto con el cátodo). El aparato de pulverización usado en el método de JPPʼ729 tiene una idea para prevenir el daño en las capas orgánicas durante la pulverización, sin embargo, algunos daños serán observados todavía en las capas orgánicas.
Adicionalmente, las Solicitudes de Patente Japonesas sin examen Nos. 2000-58265 y 2000-68063 enseñan una idea para formar una capa de ftalocianina de cobre (CuPc) como capa amortiguadora para el proceso de pulverización sobre la capa de emisión de luz. En estas JPPs, se divulga que cuando el metal alcalino tal como el Li es depositado sobre la capa de CuPc formada de manera muy delgada, el metal Li se difunde dentro de la capa de CuPc para atravesar en la dirección de la capa de emisión de luz, y en tal caso, como resultado, la CuPc puede actuar como una molécula transportadora de electrones (no actúa como molécula transportadora de hueco).
Sin embargo, puesto que la CuPc es esencialmente una molécula transportadora de huecos por naturaleza, surge un problema con el deterioro acelerado del dispositivo orgánico cuando se utiliza CuPc en la formación de una capa de transporte de electrones como se sugiere más arriba.
Por otro lado, si la capa de conversión de corriente de huecos-corriente de electrones de la presente invención se utiliza en la formación del dispositivo orgánico, la CuPc utilizada como una capa de amortiguación durante la deposición de partículas de alta energía tal como por pulverización puede actuar como una capa de transporte de huecos como siempre ha sido en el pasado, estos es, la CuPc puede exhibir su propiedad original. Por ejemplo, como se ilustra en la figura 19, puede depositarse un sustrato 70 de vidrio con una capa 71 de ITO, una capa 72 de αNPD, una capa 73 de Alq, una capa 74 de Alq:Liq (1:1), una capa 75 de Al, una capa 76 de V2O5:CuPc, una capa 77 de CuPc y un cátodo 78 consistente de Al, ITO u otro material en ese orden para formar un dispositivo 270 orgánico de EL que tiene la estructura: ITO / αNPD / Alq / Alq:Liq(1:1),50Å/ Al,15Å/ V2O5:CuPc / CuPc / cátodo (Al, ITO etc. (figura 19).
Alternativamente, como se ilustra en la figura 20, la capa 77 de CuPc del dispositivo orgánico de la figura 19 puede ser reemplazada con una combinación de la capa 77 de CuPc y la capa 79 superpuesta de V2O5:CuPc para formar un dispositivo 271 orgánico EL que tiene la estructura: ITO / αNPD / Alq / Alq:Liq (1:1),50 Å / Al,15Å/ V2O5:CuPc / CuPc / V2O5:CuPc / cátodo (Al, ITO etc. (figura 20).
En los dispositivos 270 y 271 orgánicos EL resultantes, la función original como capa de transporte de huecos y la función como capa de reducción de daños para evitar daños debidos a las partículas de alta energía pueden lograrse simultáneamente.
Ejemplo 8
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Claims (1)
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Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003380338 | 2003-11-10 | ||
| JP2003380338 | 2003-11-10 | ||
| JP2004294120 | 2004-10-06 | ||
| JP2004294120A JP4243237B2 (ja) | 2003-11-10 | 2004-10-06 | 有機素子、有機el素子、有機太陽電池、及び、有機fet構造、並びに、有機素子の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2546845T3 true ES2546845T3 (es) | 2015-09-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES04026734.6T Expired - Lifetime ES2546845T3 (es) | 2003-11-10 | 2004-11-10 | Método de producción de dispositivos orgánicos |
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| Country | Link |
|---|---|
| US (1) | US9196850B2 (es) |
| EP (2) | EP1865566B1 (es) |
| JP (1) | JP4243237B2 (es) |
| KR (1) | KR100880878B1 (es) |
| CN (1) | CN100527458C (es) |
| ES (1) | ES2546845T3 (es) |
| TW (1) | TWI333802B (es) |
Families Citing this family (200)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006114477A (ja) * | 2003-09-26 | 2006-04-27 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法、および電子機器 |
| TWI407830B (zh) | 2003-09-26 | 2013-09-01 | 半導體能源研究所股份有限公司 | 發光元件和其製法 |
| JP4300176B2 (ja) * | 2003-11-13 | 2009-07-22 | ローム株式会社 | 有機エレクトロルミネッセント素子 |
| US7605534B2 (en) * | 2003-12-02 | 2009-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element having metal oxide and light-emitting device using the same |
| WO2005064995A1 (en) | 2003-12-26 | 2005-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
| CN100508238C (zh) * | 2004-05-11 | 2009-07-01 | Lg化学株式会社 | 有机电子器件 |
| WO2005115062A1 (en) * | 2004-05-20 | 2005-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
| KR101152935B1 (ko) | 2004-05-21 | 2012-06-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광소자 및 발광장치 |
| JP4925569B2 (ja) * | 2004-07-08 | 2012-04-25 | ローム株式会社 | 有機エレクトロルミネッセント素子 |
| JP2006295104A (ja) * | 2004-07-23 | 2006-10-26 | Semiconductor Energy Lab Co Ltd | 発光素子およびそれを用いた発光装置 |
| JP5132041B2 (ja) * | 2004-08-03 | 2013-01-30 | 株式会社半導体エネルギー研究所 | 発光装置および電気機器 |
| CN100534247C (zh) * | 2004-08-03 | 2009-08-26 | 株式会社半导体能源研究所 | 发光元件和发光器件 |
| EP1624502B1 (en) | 2004-08-04 | 2015-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, display device, and electronic appliance |
| CN101841002B (zh) | 2004-09-24 | 2011-11-16 | 株式会社半导体能源研究所 | 发光器件 |
| CN101027942B (zh) * | 2004-09-24 | 2010-06-16 | 株式会社半导体能源研究所 | 发光器件 |
| CN101656302B (zh) | 2004-09-30 | 2012-01-18 | 株式会社半导体能源研究所 | 发光元件和使用该发光元件的显示器件 |
| US7737626B2 (en) | 2004-09-30 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element |
| US7964864B2 (en) | 2004-09-30 | 2011-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and light-emitting device |
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-
2004
- 2004-10-06 JP JP2004294120A patent/JP4243237B2/ja not_active Expired - Lifetime
- 2004-11-03 TW TW093133505A patent/TWI333802B/zh not_active IP Right Cessation
- 2004-11-08 US US10/983,857 patent/US9196850B2/en active Active
- 2004-11-10 CN CNB200410088649XA patent/CN100527458C/zh not_active Expired - Lifetime
- 2004-11-10 EP EP07116140.0A patent/EP1865566B1/en not_active Expired - Lifetime
- 2004-11-10 ES ES04026734.6T patent/ES2546845T3/es not_active Expired - Lifetime
- 2004-11-10 EP EP04026734.6A patent/EP1530245B1/en not_active Expired - Lifetime
- 2004-11-10 KR KR1020040091446A patent/KR100880878B1/ko not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US9196850B2 (en) | 2015-11-24 |
| EP1865566B1 (en) | 2019-10-02 |
| JP4243237B2 (ja) | 2009-03-25 |
| EP1530245A2 (en) | 2005-05-11 |
| CN100527458C (zh) | 2009-08-12 |
| US20050098207A1 (en) | 2005-05-12 |
| EP1530245A3 (en) | 2006-05-31 |
| KR100880878B1 (ko) | 2009-01-30 |
| EP1865566A1 (en) | 2007-12-12 |
| TW200526077A (en) | 2005-08-01 |
| JP2005166637A (ja) | 2005-06-23 |
| KR20050045889A (ko) | 2005-05-17 |
| EP1530245B1 (en) | 2015-08-05 |
| CN1620212A (zh) | 2005-05-25 |
| TWI333802B (en) | 2010-11-21 |
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