ES258156A1 - Un procedimiento para la formaciën y tratamiento de cristales - Google Patents

Un procedimiento para la formaciën y tratamiento de cristales

Info

Publication number
ES258156A1
ES258156A1 ES0258156A ES258156A ES258156A1 ES 258156 A1 ES258156 A1 ES 258156A1 ES 0258156 A ES0258156 A ES 0258156A ES 258156 A ES258156 A ES 258156A ES 258156 A1 ES258156 A1 ES 258156A1
Authority
ES
Spain
Prior art keywords
germ
formation
heating
high frequency
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0258156A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia Spain SA
Original Assignee
Alcatel Espana SA
Standard Electrica SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Espana SA, Standard Electrica SA filed Critical Alcatel Espana SA
Publication of ES258156A1 publication Critical patent/ES258156A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1028—Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor [e.g., Verneuil method]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
ES0258156A 1959-06-17 1960-05-17 Un procedimiento para la formaciën y tratamiento de cristales Expired ES258156A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US820938A US3086850A (en) 1959-06-17 1959-06-17 Method and means for growing and treating crystals

Publications (1)

Publication Number Publication Date
ES258156A1 true ES258156A1 (es) 1960-08-16

Family

ID=25232096

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0258156A Expired ES258156A1 (es) 1959-06-17 1960-05-17 Un procedimiento para la formaciën y tratamiento de cristales

Country Status (3)

Country Link
US (1) US3086850A (fr)
BE (1) BE591978A (fr)
ES (1) ES258156A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3233977A (en) * 1961-05-31 1966-02-08 Westinghouse Electric Corp Furnace with means for adjusting a crucible in growing crystals
BE676042A (fr) * 1965-02-10 1966-06-16
US3655415A (en) * 1968-12-31 1972-04-11 Union Carbide Corp Asteriated synthetic corundum gem stones and method and apparatus for their production
US3870472A (en) * 1969-11-26 1975-03-11 Joseph A Adamski Method and apparatus for growing crystals by annealing the crystal after formation
DE2542886B2 (de) * 1975-09-25 1978-09-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zur Pulverförderung bei der Kristallzüchtung nach Verneuil
US4242175A (en) * 1978-12-26 1980-12-30 Zumbrunnen Allen D Silicon refining process
JP3053958B2 (ja) * 1992-04-10 2000-06-19 光弘 丸山 浮遊帯溶融法による結晶の製造装置
US8357211B2 (en) * 2010-08-31 2013-01-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration ADR salt pill design and crystal growth process for hydrated magnetic salts
JP6562525B2 (ja) * 2016-07-28 2019-08-21 株式会社クリスタルシステム 単結晶製造装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2686864A (en) * 1951-01-17 1954-08-17 Westinghouse Electric Corp Magnetic levitation and heating of conductive materials
DE901413C (de) * 1951-09-23 1954-03-15 August Monath Dr Ing Einrichtung zum Erschmelzen von Kristallen hochschmelzender Mineralien, insbesondere kuenstlicher Edelsteine
US2686865A (en) * 1951-10-20 1954-08-17 Westinghouse Electric Corp Stabilizing molten material during magnetic levitation and heating thereof
NL89230C (fr) * 1952-12-17 1900-01-01
GB723179A (en) * 1953-09-30 1955-02-02 Gen Electric Co Ltd Improvements in or relating to methods of preparing single crystals of semi-conducting materials
US2893847A (en) * 1954-02-23 1959-07-07 Siemens Ag Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
US2793103A (en) * 1954-02-24 1957-05-21 Siemens Ag Method for producing rod-shaped bodies of crystalline material
US2870309A (en) * 1957-06-11 1959-01-20 Emil R Capita Zone purification device
US2897329A (en) * 1957-09-23 1959-07-28 Sylvania Electric Prod Zone melting apparatus

Also Published As

Publication number Publication date
US3086850A (en) 1963-04-23
BE591978A (fr) 1960-10-17

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