ES2616248T3 - Fotodiodo PIN de alta velocidad con respuesta incrementada - Google Patents

Fotodiodo PIN de alta velocidad con respuesta incrementada Download PDF

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Publication number
ES2616248T3
ES2616248T3 ES03708942.2T ES03708942T ES2616248T3 ES 2616248 T3 ES2616248 T3 ES 2616248T3 ES 03708942 T ES03708942 T ES 03708942T ES 2616248 T3 ES2616248 T3 ES 2616248T3
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ES
Spain
Prior art keywords
semiconductor layer
concentration
type semiconductor
holes
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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ES03708942.2T
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English (en)
Inventor
Cheng C. Ko
Barry Levine
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Picometrix LLC
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Picometrix LLC
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Publication of ES2616248T3 publication Critical patent/ES2616248T3/es
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1243—Active materials comprising only Group III-V materials, e.g. GaAs characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Light Receiving Elements (AREA)

Abstract

Un fotodiodo (10) PIN que comprende: una primera capa (14) semiconductora tipo p; una capa (18) semiconductora tipo n; una segunda capa (16) semiconductora tipo p dispuesta entre la primera capa (14) semiconductora tipo p y la capa (18) semiconductora tipo n de tal manera que el segundo semiconductor (16) tipo p está directamente adyacente a la capa (18) semiconductora, teniendo la segunda capa (16) semiconductora tipo p una concentración de dopaje graduada; un sustrato (20), creciendo la capa (18) semiconductora tipo n sobre el sustrato (20); una capa (12) de ánodo para recolectar agujeros; una capa (22) de cátodo para recolectar electrones; en el que la concentración de dopaje graduada define una primera concentración (15) adyacente a la primera capa (14) semiconductora tipo p y una segunda concentración (17) adyacente a la capa (18) semiconductora tipo n, y además en el que la primera concentración (15) es mayor que la segunda concentración (17); en el que la luz incidente es absorbida en la segunda capa (16) semiconductora tipo p siendo absorbida la luz incidente en la segunda concentración (17) que es parte de la segunda capa (16) semiconductora tipo p produce electrones y agujeros que derivan al ánodo y cátodo; en el que los electrones generados en la segunda concentración (17) que es parte de la segunda capa (16) semiconductora tipo p alcanzan el cátodo con su velocidad de saturación y son recolectados, los agujeros generados en la segunda concentración (17) que es parte de la segunda la capa (16) semiconductora tipo p se desplazan hasta el ánodo (12), en el que la luz incidente que se absorbe en la primera concentración (15) que es parte de la segunda capa (16) semiconductora tipo p produce electrones y agujeros, en donde los agujeros se recolectan en la primera concentración (15) que es parte; y en el que dichos electrones en la primera concentración (15) que es parte están sujetos a un pseudocampo capaz de proporcionarles una velocidad electrónica de sobreexpansión, siendo regido el pseudocampo por la siguiente ecuación: donde k es la constante de Boltzman, T es la temperatura, q es la carga de un electrón y el valor es el gradiente de concentración de dopaje, y en el que la primera concentración (15) está situada en una posición xo y define una concentración po, y además en el que la concentración de dopaje graduada se rige por la siguiente ecuación: sobre la profundidad D de la segunda capa (16) semiconductora tipo p para todo x y para D mayor que cero.

Description

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Claims (1)

  1. imagen1
ES03708942.2T 2002-02-01 2003-02-03 Fotodiodo PIN de alta velocidad con respuesta incrementada Expired - Lifetime ES2616248T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35384902P 2002-02-01 2002-02-01
US353849P 2002-02-01
PCT/US2003/003181 WO2003065416A2 (en) 2002-02-01 2003-02-03 Enhanced photodetector

Publications (1)

Publication Number Publication Date
ES2616248T3 true ES2616248T3 (es) 2017-06-12

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Application Number Title Priority Date Filing Date
ES03708942.2T Expired - Lifetime ES2616248T3 (es) 2002-02-01 2003-02-03 Fotodiodo PIN de alta velocidad con respuesta incrementada

Country Status (9)

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US (1) US7078741B2 (es)
EP (1) EP1470574B9 (es)
JP (1) JP5021888B2 (es)
KR (1) KR100766174B1 (es)
CN (1) CN100474634C (es)
AU (1) AU2003212899A1 (es)
CA (1) CA2474556C (es)
ES (1) ES2616248T3 (es)
WO (1) WO2003065416A2 (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
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JP4938221B2 (ja) 2002-02-01 2012-05-23 ピコメトリックス インコーポレイテッド プレーナ・アバランシェ・フォトダイオード
CA2474556C (en) 2002-02-01 2014-10-07 Picometrix, Inc. Enhanced photodetector
WO2005114712A1 (en) * 2004-04-30 2005-12-01 Picometrix, Llc Planar avalanche photodiode
JP4992446B2 (ja) * 2006-02-24 2012-08-08 ソニー株式会社 固体撮像装置及びその製造方法、並びにカメラ
EP2466649A1 (en) * 2010-12-16 2012-06-20 Alcatel Lucent A double-collector uni-travelling-carrier photodiode
WO2013176976A1 (en) * 2012-05-17 2013-11-28 Picometrix, Llc Planar avalanche photodiode
EP2808908B1 (en) 2013-05-31 2023-04-19 Mellanox Technologies, Ltd. High-speed photodetector
US9786855B2 (en) 2014-12-30 2017-10-10 Indian Institute Of Technology Bombay Micro electro mechanical system (MEMS) based wide-band polymer photo-detector
CN105097964B (zh) * 2015-07-21 2017-03-08 中国电子科技集团公司第三十八研究所 一种有源区高斯掺杂型pπn紫外探测器
CN110880521A (zh) * 2018-09-06 2020-03-13 夏普株式会社 摄像面板及其制造方法

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Also Published As

Publication number Publication date
WO2003065416A3 (en) 2004-03-11
CA2474556C (en) 2014-10-07
KR100766174B1 (ko) 2007-10-10
EP1470574A4 (en) 2011-02-16
EP1470574B1 (en) 2016-11-30
US20050056861A1 (en) 2005-03-17
JP5021888B2 (ja) 2012-09-12
AU2003212899A1 (en) 2003-09-02
EP1470574A2 (en) 2004-10-27
CA2474556A1 (en) 2003-08-07
HK1085841A1 (zh) 2006-09-01
JP2005516413A (ja) 2005-06-02
US7078741B2 (en) 2006-07-18
WO2003065416A2 (en) 2003-08-07
CN100474634C (zh) 2009-04-01
EP1470574B9 (en) 2017-04-12
CN1701445A (zh) 2005-11-23
KR20040097991A (ko) 2004-11-18

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