ES2626810T3 - Método para la formación de una película delgada semi-conductora compuesta - Google Patents

Método para la formación de una película delgada semi-conductora compuesta Download PDF

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Publication number
ES2626810T3
ES2626810T3 ES09755426.5T ES09755426T ES2626810T3 ES 2626810 T3 ES2626810 T3 ES 2626810T3 ES 09755426 T ES09755426 T ES 09755426T ES 2626810 T3 ES2626810 T3 ES 2626810T3
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Prior art keywords
semiconductor
composite
formation
composite film
conductive composite
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ES09755426.5T
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Allan James Bruce
Sergey Frolov
Michael Cyrus
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Sunlight Aerospace Inc
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Sunlight Photonics Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Un método de fabricación de un dispositivo semiconductor de película delgada, que comprende: el suministro de una pluralidad de materias primas semiconductoras; la pre-reacción de las materias primas semiconductoras para formar un material objetivo semiconductor compuesto homogéneo; en el que las materias primas semiconductoras comprenden materiales semiconductores compuestos I-III-VI y F como un constituyente adicional junto con los materiales semiconductores compuestos I-III-VI o comprenden materiales semiconductores compuestos II-VI; y depósito del material objetivo semiconductor compuesto sobre un sustrato para formar una película delgada que tiene una composición igual que una composición del material objetivo semiconductor compuesto.

Description

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Claims (1)

  1. imagen1
ES09755426.5T 2008-04-02 2009-04-01 Método para la formación de una película delgada semi-conductora compuesta Active ES2626810T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US61450 2008-04-02
US12/061,450 US7842534B2 (en) 2008-04-02 2008-04-02 Method for forming a compound semi-conductor thin-film
PCT/US2009/039103 WO2009146063A1 (en) 2008-04-02 2009-04-01 Method for forming a compound semi-conductor thin-film

Publications (1)

Publication Number Publication Date
ES2626810T3 true ES2626810T3 (es) 2017-07-26

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ES09755426.5T Active ES2626810T3 (es) 2008-04-02 2009-04-01 Método para la formación de una película delgada semi-conductora compuesta

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US (3) US7842534B2 (es)
EP (1) EP2260506B1 (es)
ES (1) ES2626810T3 (es)
WO (1) WO2009146063A1 (es)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8465589B1 (en) 2009-02-05 2013-06-18 Ascent Solar Technologies, Inc. Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors
US8648253B1 (en) 2010-10-01 2014-02-11 Ascent Solar Technologies, Inc. Machine and process for continuous, sequential, deposition of semiconductor solar absorbers having variable semiconductor composition deposited in multiple sublayers
FR2922046B1 (fr) * 2007-10-05 2011-06-24 Saint Gobain Perfectionnements apportes a des elements capables de collecter de la lumiere
US7842534B2 (en) * 2008-04-02 2010-11-30 Sunlight Photonics Inc. Method for forming a compound semi-conductor thin-film
JP4384237B2 (ja) * 2008-05-19 2009-12-16 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の製造方法
TWI373851B (en) * 2008-11-25 2012-10-01 Nexpower Technology Corp Stacked-layered thin film solar cell and manufacturing method thereof
US8202407B1 (en) * 2009-01-06 2012-06-19 Arthur Don Harmala Apparatus and method for manufacturing polycarbonate solar cells
US10347473B2 (en) * 2009-09-24 2019-07-09 The United States Of America, As Represented By The Secretary Of The Navy Synthesis of high-purity bulk copper indium gallium selenide materials
FR2951022B1 (fr) * 2009-10-07 2012-07-27 Nexcis Fabrication de couches minces a proprietes photovoltaiques, a base d'un alliage de type i-iii-vi2, par electro-depots successifs et post-traitement thermique.
IN2012DN02992A (es) * 2009-10-13 2015-07-31 First Solar Inc
US7910396B2 (en) * 2009-10-21 2011-03-22 Sunlight Photonics, Inc. Three-stage formation of thin-films for photovoltaic devices
US8546176B2 (en) * 2010-04-22 2013-10-01 Tsmc Solid State Lighting Ltd. Forming chalcogenide semiconductor absorbers
CN101950769B (zh) * 2010-06-29 2012-02-15 上海大学 一种CdTe薄膜太阳能电池背电极的制备方法
US8426725B2 (en) 2010-12-13 2013-04-23 Ascent Solar Technologies, Inc. Apparatus and method for hybrid photovoltaic device having multiple, stacked, heterogeneous, semiconductor junctions
EP2503589B1 (en) * 2011-03-21 2017-01-11 Sunlight Photonics Inc. Multi-stage formation of thin-films for photovoltaic devices
CN103421974B (zh) * 2012-05-17 2015-11-25 广东先导稀材股份有限公司 铜铟镓合金的制备方法
US9994951B2 (en) * 2013-03-15 2018-06-12 The United States Of America, As Represented By The Secretary Of The Navy Photovoltaic sputtering targets fabricated from reclaimed materials
US9093599B2 (en) 2013-07-26 2015-07-28 First Solar, Inc. Vapor deposition apparatus for continuous deposition of multiple thin film layers on a substrate
CN107541708B (zh) * 2017-07-27 2019-09-13 中国航发北京航空材料研究院 具有一维纳米阵列结构的碲镉汞薄膜的制备方法
CN109932356A (zh) * 2019-03-20 2019-06-25 福建师范大学 一种半导体载流子类型判断及禁带宽度的测量方法
WO2022266207A1 (en) 2021-06-16 2022-12-22 Conti SPE, LLC. Mechanically stacked solar transmissive cells or modules
IL309370B2 (en) 2021-06-16 2025-07-01 Conti Spe Llc Mechanically stacked solar transmissive cells or modules
US12414402B1 (en) 2025-01-03 2025-09-09 Conti Innovation Center, Llc Optimizing cadmium (CD) alloy solar cells with sputtered copper-dopped zinc telluride (ZNTE:CU) back contacts in the presence of hydrogen

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2651700A (en) * 1951-11-24 1953-09-08 Francois F Gans Manufacturing process of cadmium sulfide, selenide, telluride photoconducting cells
US3051839A (en) * 1959-07-20 1962-08-28 Clevite Corp Photoconductive element
US3186874A (en) * 1961-09-21 1965-06-01 Harshaw Chem Corp Photovoltaic cell
US3977018A (en) * 1972-12-04 1976-08-24 Texas Instruments Incorporated Passivation of mercury cadmium telluride semiconductor surfaces by anodic oxidation
FR2265872B1 (es) 1974-03-27 1977-10-14 Anvar
US3978510A (en) 1974-07-29 1976-08-31 Bell Telephone Laboratories, Incorporated Heterojunction photovoltaic devices employing i-iii-vi compounds
US4057476A (en) * 1976-05-26 1977-11-08 General Dynamics Corporation Thin film photovoltaic diodes and method for making same
JPS53142927A (en) 1977-05-20 1978-12-13 Riyouichi Kasagi Metal melting and injection method that does not generate contraction and distortion to film and its device
JPS5536950A (en) * 1978-09-05 1980-03-14 Fuji Photo Film Co Ltd Manufacturing of thin film photocell
US4335266A (en) 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
US4492811A (en) * 1983-08-01 1985-01-08 Union Oil Company Of California Heterojunction photovoltaic device
US4652332A (en) 1984-11-29 1987-03-24 The United States Of America As Represented By The United States Department Of Energy Method of synthesizing and growing copper-indium-diselenide (CuInSe2) crystals
US4798660A (en) 1985-07-16 1989-01-17 Atlantic Richfield Company Method for forming Cu In Se2 films
US4735662A (en) * 1987-01-06 1988-04-05 The Standard Oil Company Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors
US4740386A (en) 1987-03-30 1988-04-26 Rockwell International Corporation Method for depositing a ternary compound having a compositional profile
US4818357A (en) * 1987-05-06 1989-04-04 Brown University Research Foundation Method and apparatus for sputter deposition of a semiconductor homojunction and semiconductor homojunction products created by same
CA1303194C (en) * 1987-07-21 1992-06-09 Katsumi Nakagawa Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least zn, se and h in an amount of 1 to40 atomic %
US5112410A (en) * 1989-06-27 1992-05-12 The Boeing Company Cadmium zinc sulfide by solution growth
US5286306A (en) * 1992-02-07 1994-02-15 Shalini Menezes Thin film photovoltaic cells from I-III-VI-VII compounds
US5510644A (en) * 1992-03-23 1996-04-23 Martin Marietta Corporation CDTE x-ray detector for use at room temperature
EP0574716B1 (en) 1992-05-19 1996-08-21 Matsushita Electric Industrial Co., Ltd. Method for preparing chalcopyrite-type compound
JP3064701B2 (ja) 1992-10-30 2000-07-12 松下電器産業株式会社 カルコパイライト型化合物薄膜の製造方法
US5910854A (en) 1993-02-26 1999-06-08 Donnelly Corporation Electrochromic polymeric solid films, manufacturing electrochromic devices using such solid films, and processes for making such solid films and devices
US5441897A (en) 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
DE4333407C1 (de) * 1993-09-30 1994-11-17 Siemens Ag Solarzelle mit einer Chalkopyritabsorberschicht
WO1995033873A1 (en) 1994-06-02 1995-12-14 Kabushiki Kaisha Kobe Seiko Sho Compound monocrystal manufacturing method and apparatus
US5773085A (en) * 1994-07-04 1998-06-30 Nippon Hoso Kyokai Method of manufacturing ternary compound thin films
DE4442824C1 (de) 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
JPH09326499A (ja) 1996-06-05 1997-12-16 Sumitomo Metal Mining Co Ltd ＣｄＴｅ太陽電池の製造方法
JP3249407B2 (ja) * 1996-10-25 2002-01-21 昭和シェル石油株式会社 カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池
US5985691A (en) 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
US6121541A (en) * 1997-07-28 2000-09-19 Bp Solarex Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
US6258620B1 (en) 1997-10-15 2001-07-10 University Of South Florida Method of manufacturing CIGS photovoltaic devices
US6107562A (en) 1998-03-24 2000-08-22 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method for manufacturing the same, and solar cell using the same
US6127202A (en) 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
DE19921515A1 (de) * 1999-05-10 2000-11-30 Ist Inst Fuer Solartechnologie Dünnschichtsolarzelle auf der Basis der Ia/IIIb/VIa- Verbindungshalbleiter und Verfahren zu ihrer Herstellung
AU2249201A (en) * 1999-11-16 2001-05-30 Midwest Research Institute A novel processing approach towards the formation of thin-film Cu(In,Ga)Se2
DE19956735B4 (de) 1999-11-25 2008-08-21 Shell Erneuerbare Energien Gmbh Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung
US8771740B2 (en) 1999-12-20 2014-07-08 Nicholas J. Kerkhof Process for producing nanoparticles by spray drying
JP2001254103A (ja) 2000-03-13 2001-09-18 Sanei Kasei Kk ナノコンポジット構造を有する金属粒子及び自己組織化によるその製造方法
US7194197B1 (en) 2000-03-16 2007-03-20 Global Solar Energy, Inc. Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer
DE10058383A1 (de) * 2000-11-24 2002-05-29 Oxeno Olefinchemie Gmbh Neue Phosphininverbindungen und deren Metallkomplexe
US7537955B2 (en) 2001-04-16 2009-05-26 Basol Bulent M Low temperature nano particle preparation and deposition for phase-controlled compound film formation
US7842882B2 (en) * 2004-03-01 2010-11-30 Basol Bulent M Low cost and high throughput deposition methods and apparatus for high density semiconductor film growth
DE60237159D1 (de) * 2001-07-06 2010-09-09 Honda Motor Co Ltd Verfahren zur ausbildung einer lichtabsorbierenden schicht
CN100421926C (zh) 2001-09-11 2008-10-01 美国杜邦泰津胶片合伙人有限公司 用于柔性电子器件和光电子器件的热稳定聚萘二甲酸乙二醇酯膜
US6881647B2 (en) * 2001-09-20 2005-04-19 Heliovolt Corporation Synthesis of layers, coatings or films using templates
US6559372B2 (en) 2001-09-20 2003-05-06 Heliovolt Corporation Photovoltaic devices and compositions for use therein
JP3876440B2 (ja) * 2002-02-14 2007-01-31 本田技研工業株式会社 光吸収層の作製方法
JP4055053B2 (ja) 2002-03-26 2008-03-05 本田技研工業株式会社 化合物薄膜太陽電池およびその製造方法
US20040014314A1 (en) * 2002-04-24 2004-01-22 Brooks Joseph F. Evaporative deposition with enhanced film uniformity and stoichiometry
FR2839201B1 (fr) 2002-04-29 2005-04-01 Electricite De France Procede de fabrication de semi-conducteurs en couches minces a base de composes i-iii-vi2, pour applications photovoltaiques
US20030219544A1 (en) 2002-05-22 2003-11-27 Smith William C. Thermal spray coating process with nano-sized materials
WO2004032189A2 (en) 2002-09-30 2004-04-15 Miasolé Manufacturing apparatus and method for large-scale production of thin-film solar cells
US20050056312A1 (en) 2003-03-14 2005-03-17 Young David L. Bifacial structure for tandem solar cells
US7479596B2 (en) * 2003-03-18 2009-01-20 Panasonic Corporation Solar cell and method for manufacturing the same
WO2004083122A1 (ja) 2003-03-20 2004-09-30 Asahi Glass Company, Limited チタン酸ビスマス微粒子の製造方法
CN1839213A (zh) * 2003-08-21 2006-09-27 霍尼韦尔国际公司 在三元混合物中包含铜的pvd靶和形成含铜pvd靶的方法
US7306823B2 (en) 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US8372734B2 (en) 2004-02-19 2013-02-12 Nanosolar, Inc High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles
US20080124831A1 (en) 2004-02-19 2008-05-29 Robinson Matthew R High-throughput printing of semiconductor precursor layer from chalcogenide particles
US8623448B2 (en) 2004-02-19 2014-01-07 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles
US7605328B2 (en) 2004-02-19 2009-10-20 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
EP1684362A3 (en) * 2004-12-02 2006-08-02 Technische Universiteit Delft Process for the production of thin layers, preferably for a photovoltaic cell
JP2007096031A (ja) 2005-09-29 2007-04-12 Showa Shell Sekiyu Kk Ｃｉｓ系薄膜太陽電池モジュール及びその製造方法
US7288332B2 (en) * 2005-10-06 2007-10-30 Los Almos National Security, Llc Conductive layer for biaxially oriented semiconductor film growth
US20070111367A1 (en) * 2005-10-19 2007-05-17 Basol Bulent M Method and apparatus for converting precursor layers into photovoltaic absorbers
US8617640B2 (en) 2006-06-12 2013-12-31 Nanosolar, Inc. Thin-film devices formed from solid group IIIA alloy particles
TWI318894B (en) 2006-08-07 2010-01-01 Ind Tech Res Inst System for fabricating nano particles
US7803210B2 (en) 2006-08-09 2010-09-28 Napra Co., Ltd. Method for producing spherical particles having nanometer size, crystalline structure, and good sphericity
US8323735B2 (en) 2006-10-13 2012-12-04 Solopower, Inc. Method and apparatus to form solar cell absorber layers with planar surface
US20080196760A1 (en) 2007-02-15 2008-08-21 Richard Allen Hayes Articles such as safety laminates and solar cell modules containing high melt flow acid copolymer compositions
US20080236032A1 (en) * 2007-03-26 2008-10-02 Kelly Michael T Compositions, devices and methods for hydrogen generation
US20090229666A1 (en) 2008-03-14 2009-09-17 Jason Stephan Corneille Smoothing a metallic substrate for a solar cell
US20090211622A1 (en) * 2008-02-21 2009-08-27 Sunlight Photonics Inc. Multi-layered electro-optic devices
US20090215215A1 (en) * 2008-02-21 2009-08-27 Sunlight Photonics Inc. Method and apparatus for manufacturing multi-layered electro-optic devices
US8187906B2 (en) * 2008-02-28 2012-05-29 Sunlight Photonics Inc. Method for fabricating composite substances for thin film electro-optical devices
US9646828B2 (en) * 2008-04-02 2017-05-09 Sunlight Photonics Inc. Reacted particle deposition (RPD) method for forming a compound semi-conductor thin-film
US7842534B2 (en) * 2008-04-02 2010-11-30 Sunlight Photonics Inc. Method for forming a compound semi-conductor thin-film
US20100098854A1 (en) * 2008-10-17 2010-04-22 Sunlight Photonics Inc. Pressure controlled droplet spraying (pcds) method for forming particles of compound materials from melts
US8110428B2 (en) * 2008-11-25 2012-02-07 Sunlight Photonics Inc. Thin-film photovoltaic devices
US7910396B2 (en) * 2009-10-21 2011-03-22 Sunlight Photonics, Inc. Three-stage formation of thin-films for photovoltaic devices

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EP2260506A1 (en) 2010-12-15
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US20090250722A1 (en) 2009-10-08
EP2260506A4 (en) 2013-09-04

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