ES2644268T3 - Proceso para rellenar surcos de contacto en microelectrónica - Google Patents

Proceso para rellenar surcos de contacto en microelectrónica Download PDF

Info

Publication number
ES2644268T3
ES2644268T3 ES12703929.5T ES12703929T ES2644268T3 ES 2644268 T3 ES2644268 T3 ES 2644268T3 ES 12703929 T ES12703929 T ES 12703929T ES 2644268 T3 ES2644268 T3 ES 2644268T3
Authority
ES
Spain
Prior art keywords
microelectronics
contact grooves
filling contact
filling
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES12703929.5T
Other languages
English (en)
Inventor
Thomas B. Richardson
Joseph A. Abys
Wenbo Shao
Chen Wang
Jr. Vincent Paneccasio
Cai Wang
Xuan Lin
Theodore Antonellis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MacDermid Enthone Inc
Original Assignee
MacDermid Enthone Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MacDermid Enthone Inc filed Critical MacDermid Enthone Inc
Application granted granted Critical
Publication of ES2644268T3 publication Critical patent/ES2644268T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0261—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias characterised by the filling method or the material of the conductive fill
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Coating Apparatus (AREA)

Description

imagen1
imagen2
imagen3
imagen4
imagen5
imagen6
imagen7
imagen8
imagen9
imagen10
imagen11
imagen12
imagen13
imagen14
imagen15
imagen16
imagen17
imagen18
imagen19
imagen20
imagen21
imagen22
imagen23
imagen24
imagen25
imagen26
imagen27
imagen28
imagen29
imagen30
imagen31
imagen32
imagen33
imagen34
imagen35
imagen36
imagen37
imagen38
imagen39
imagen40
imagen41
imagen42

Claims (1)

  1. imagen1
    imagen2
ES12703929.5T 2011-01-26 2012-01-26 Proceso para rellenar surcos de contacto en microelectrónica Active ES2644268T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161436569P 2011-01-26 2011-01-26
US201161436569P 2011-01-26
PCT/US2012/022758 WO2012103357A1 (en) 2011-01-26 2012-01-26 Process for filling vias in the microelectronics

Publications (1)

Publication Number Publication Date
ES2644268T3 true ES2644268T3 (es) 2017-11-28

Family

ID=45592815

Family Applications (1)

Application Number Title Priority Date Filing Date
ES12703929.5T Active ES2644268T3 (es) 2011-01-26 2012-01-26 Proceso para rellenar surcos de contacto en microelectrónica

Country Status (7)

Country Link
US (2) US10541140B2 (es)
EP (1) EP2668317B1 (es)
JP (1) JP5981455B2 (es)
KR (1) KR101817823B1 (es)
CN (1) CN103492617B (es)
ES (1) ES2644268T3 (es)
WO (1) WO2012103357A1 (es)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5981455B2 (ja) 2011-01-26 2016-08-31 エンソン インコーポレイテッド マイクロ電子工業におけるビアホール充填方法
CN103361694A (zh) * 2013-08-08 2013-10-23 上海新阳半导体材料股份有限公司 一种用于3d铜互连高深宽比硅通孔技术微孔电镀填铜方法
EP2865787A1 (en) 2013-10-22 2015-04-29 ATOTECH Deutschland GmbH Copper electroplating method
US10147510B1 (en) * 2013-11-15 2018-12-04 National Technology & Engineering Solutions Of Sandia, Llc Electroplated AU for conformal coating of high aspect ratio silicon structures
US20150233008A1 (en) * 2014-02-13 2015-08-20 Skyworks Solutions, Inc. Apparatus and methods related to copper plating of wafers
US9809891B2 (en) 2014-06-30 2017-11-07 Rohm And Haas Electronic Materials Llc Plating method
WO2017004424A1 (en) * 2015-06-30 2017-01-05 Enthone Inc. Cobalt filling of interconnects in microelectronics
CN105441994B (zh) * 2015-12-30 2017-09-19 上海新阳半导体材料股份有限公司 一种能用于提高凸点共面性的电镀液组合物
US10519557B2 (en) 2016-02-12 2019-12-31 Macdermid Enthone Inc. Leveler compositions for use in copper deposition in manufacture of microelectronics
JP6573575B2 (ja) * 2016-05-02 2019-09-11 東京エレクトロン株式会社 凹部の埋め込み方法
US9793156B1 (en) * 2016-09-12 2017-10-17 International Business Machines Corporation Self-aligned low resistance metallic interconnect structures
CN109996785B (zh) * 2016-09-22 2021-12-28 麦克德米德乐思公司 集成电路的晶圆级封装中的铜沉积
EP3360988B1 (en) * 2017-02-09 2019-06-26 ATOTECH Deutschland GmbH Pyridinium compounds, a synthesis method therefor, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths
US10103056B2 (en) * 2017-03-08 2018-10-16 Lam Research Corporation Methods for wet metal seed deposition for bottom up gapfill of features
US10458032B2 (en) * 2017-06-15 2019-10-29 Rohm And Haas Electronic Materials Llc Environmentally friendly nickel electroplating compositions and methods
US10508348B2 (en) * 2017-06-15 2019-12-17 Rohm And Haas Electronic Materials Llc Environmentally friendly nickel electroplating compositions and methods
JP6904194B2 (ja) * 2017-09-22 2021-07-14 住友金属鉱山株式会社 配線基板用積層体及びその製造方法
JP6904195B2 (ja) * 2017-09-22 2021-07-14 住友金属鉱山株式会社 フレキシブル配線基板及びその製造方法
CN109244053B (zh) * 2018-09-17 2020-04-14 上海交通大学 一种提高tsv热机械可靠性的复合结构及其制造方法
US11823896B2 (en) * 2019-02-22 2023-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive structure formed by cyclic chemical vapor deposition
KR102748951B1 (ko) * 2019-06-25 2025-01-02 삼성전기주식회사 인쇄회로기판 도금 방법 및 인쇄회로기판
CN114514340B (zh) 2019-07-26 2025-03-21 朗姆研究公司 先进封装应用的差别对比镀覆
US11581264B2 (en) * 2019-08-21 2023-02-14 Micron Technology, Inc. Electronic devices comprising overlay marks, memory devices comprising overlay marks, and related methods
KR102818620B1 (ko) 2019-12-20 2025-06-10 삼성전자주식회사 물질막 형성 방법과, 집적회로 소자 및 그 제조 방법
US12305307B2 (en) * 2020-01-10 2025-05-20 Lam Research Corporation TSV process window and fill performance enhancement by long pulsing and ramping
US20250149380A1 (en) * 2023-11-02 2025-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure and method of forming same
CN119287460B (zh) * 2024-12-10 2025-03-14 深圳市联合蓝海应用材料科技股份有限公司 一种电镀铜整平剂及制备方法、电镀液及电镀方法与产品

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04187793A (ja) * 1990-11-20 1992-07-06 Fujitsu Ltd 半導体装置及びその製造方法
US5616317A (en) 1992-12-22 1997-04-01 Sagami Chemical Research Center Polycationic polymer and polycationic microbicidal and algaecidal agent
US6024856A (en) 1997-10-10 2000-02-15 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes
US6946065B1 (en) * 1998-10-26 2005-09-20 Novellus Systems, Inc. Process for electroplating metal into microscopic recessed features
ATE282248T1 (de) 1999-01-21 2004-11-15 Atotech Deutschland Gmbh Verfahren zum galvanischen bilden von leiterstrukturen aus hochreinem kupfer bei der herstellung von integrierten schaltungen
US6773893B1 (en) 2000-04-28 2004-08-10 The Trustees Of Columbia University In The City Of New York Human ABC1 promoter and assays based thereon
US6776893B1 (en) 2000-11-20 2004-08-17 Enthone Inc. Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect
US6432821B1 (en) * 2000-12-18 2002-08-13 Intel Corporation Method of copper electroplating
WO2003033775A1 (en) 2001-10-16 2003-04-24 Shinko Electric Industries Co., Ltd. Method of copper-plating small-diameter holes
US7316772B2 (en) 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
DE10311575B4 (de) 2003-03-10 2007-03-22 Atotech Deutschland Gmbh Verfahren zum elektrolytischen Metallisieren von Werkstücken mit Bohrungen mit einem hohen Aspektverhältnis
JP2006515467A (ja) * 2003-04-28 2006-05-25 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 後続の化学機械研磨（ＣＭＰ：ＣｈｅｍｉｃａｌＭｅｃｈａｎｉｃａｌＰｏｌｉｓｈｉｎｇ）プロセスのプロセス均一性が向上するようにパターン誘電層上に銅を電気メッキするための方法
EP1553625B1 (en) * 2004-01-12 2014-05-07 Infineon Technologies AG Method for fabrication of a contact structure
DE602005022650D1 (de) * 2004-04-26 2010-09-16 Rohm & Haas Elect Mat Verbessertes Plattierungsverfahren
TW200632147A (es) * 2004-11-12 2006-09-16
DE502007005345D1 (de) * 2006-03-30 2010-11-25 Atotech Deutschland Gmbh Elektrolytisches verfahren zum füllen von löchern und vertiefungen mit metallen
US20080006850A1 (en) 2006-07-10 2008-01-10 Innovative Micro Technology System and method for forming through wafer vias using reverse pulse plating
TWI341554B (en) 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
JP5484691B2 (ja) 2008-05-27 2014-05-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US7776741B2 (en) 2008-08-18 2010-08-17 Novellus Systems, Inc. Process for through silicon via filing
US8388824B2 (en) 2008-11-26 2013-03-05 Enthone Inc. Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
US20100206737A1 (en) * 2009-02-17 2010-08-19 Preisser Robert F Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv)
US8268155B1 (en) * 2009-10-05 2012-09-18 Novellus Systems, Inc. Copper electroplating solutions with halides
CN102286760B (zh) * 2010-05-19 2016-10-05 诺发系统有限公司 用金属电化学填充高纵横比的大型凹入特征的方法、水溶液电镀槽溶液、电镀设备以及系统
JP5981455B2 (ja) 2011-01-26 2016-08-31 エンソン インコーポレイテッド マイクロ電子工業におけるビアホール充填方法

Also Published As

Publication number Publication date
KR101817823B1 (ko) 2018-02-21
EP2668317A1 (en) 2013-12-04
US20160254156A1 (en) 2016-09-01
US10103029B2 (en) 2018-10-16
EP2668317B1 (en) 2017-08-23
US20140120722A1 (en) 2014-05-01
CN103492617A (zh) 2014-01-01
JP2014508859A (ja) 2014-04-10
CN103492617B (zh) 2017-04-19
KR20140008517A (ko) 2014-01-21
US10541140B2 (en) 2020-01-21
WO2012103357A1 (en) 2012-08-02
JP5981455B2 (ja) 2016-08-31

Similar Documents

Publication Publication Date Title
ES2644268T3 (es) Proceso para rellenar surcos de contacto en microelectrónica
ES2471951T3 (es) Procedimiento y dispositivo para el estampado en caliente
ES2644844T3 (es) Mecanismo de soporte
ES2642354T3 (es) Bastidor de retención para módulos de conectores de enchufe
IL290849A (en) Formulation for anti-a4b7 antibody
ES2644858T3 (es) Bastidor de bogie para vehículo ferroviario
CL2013003031A1 (es) Metodo para estratificacion a base de bcma en pacientes con mieloma multiple; anticuerpo anti-bcma.
EP2815112A4 (en) MANUFACTURING METHOD FOR COOLING HOLES WITH MULTIPLE CAMS
CR20130677A (es) FORMULACIÓN PARA ANTICUERPO ANTI-a4ß7
JP2012255926A5 (es)
EP2791215A4 (en) SURGICAL PROCESS FOR SURFACE MODIFICATION OF CONTACT LENSES
ES2641862T3 (es) Proceso para la elaboración de inhibidores de CCR3
FR2976000B1 (fr) Procede pour augmenter la recyclabilite d'un polyamide utilise en frittage
EP2694116A4 (en) NANOPARTICLES ON LIPID BASIS
BR112013017961A2 (pt) antígeno tripleto para treponema pallidum
BR112014000250A2 (pt) método para controlar transações de troca entre dois circuitos integrados
BR112014001803A2 (pt) máquina para fazer bloco e método para ajustar verticalmente a máquina para fazer bloco
ES2528962T9 (es) Un procedimiento para secar la colada
IT1399346B1 (it) Dispositivo di introduzione per macchine rullatrici.
BRPI0918951A2 (pt) aparelho para organizar objetos
IT1406517B1 (it) Procedimento elettrochimico per la decorazione di superficie in alluminio
ES2644293T3 (es) Dispositivo de compresión médico
ES2642712T3 (es) Péptidos de foenixina
ES2644814T3 (es) Montaje de rodillo de alimentación
JP2013043987A5 (es)