ES267571A1 - Procedure for the obtaining of monocrystalline plates of a semiconductive material (Machine-translation by Google Translate, not legally binding) - Google Patents
Procedure for the obtaining of monocrystalline plates of a semiconductive material (Machine-translation by Google Translate, not legally binding)Info
- Publication number
- ES267571A1 ES267571A1 ES0267571A ES267571A ES267571A1 ES 267571 A1 ES267571 A1 ES 267571A1 ES 0267571 A ES0267571 A ES 0267571A ES 267571 A ES267571 A ES 267571A ES 267571 A1 ES267571 A1 ES 267571A1
- Authority
- ES
- Spain
- Prior art keywords
- chamber
- translation
- legally binding
- google translate
- machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Process for obtaining monocrystalline sheets of a semiconductive material selected from the group consisting of germanium, silicon and a compound of general formula ** (See formula) ** where A and B are distinct elements, but both of group III, and C and D are distinct elements, but both of group V, and the subscripts x and y denote atomic proportions of value from zero to unity inclusive; which consists of charging a reaction chamber with reagents that include a halogen and the elements of the specific material to be formed; Remove from the chamber materials that are not reactive; heating the reagents to a suitable temperature so that they pass to the vapor phase in the chamber, and cooling at least a portion of the chamber at a rate such that the inclination of the temperature curve in degrees Kelvin with respect to the time in minutes is within of the approximate range of -15 to -140, so as to form, within the reaction chamber, monocrystalline sheets of said material, of suitable length and width to be able to apply electrical conductors, with their upper and lower faces substantially flat, and Such thickness allows several layers of different electrical conductivity and an intermediate transition zone to be formed. (Machine-translation by Google Translate, not legally binding)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2788360A | 1960-05-09 | 1960-05-09 | |
| US6540160A | 1960-10-27 | 1960-10-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES267571A1 true ES267571A1 (en) | 1961-10-16 |
Family
ID=34525687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES0267571A Expired ES267571A1 (en) | 1960-05-09 | 1961-05-05 | Procedure for the obtaining of monocrystalline plates of a semiconductive material (Machine-translation by Google Translate, not legally binding) |
Country Status (2)
| Country | Link |
|---|---|
| BE (1) | BE603572A (en) |
| ES (1) | ES267571A1 (en) |
-
1961
- 1961-05-05 ES ES0267571A patent/ES267571A1/en not_active Expired
- 1961-05-09 BE BE603572A patent/BE603572A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE603572A (en) | 1961-11-09 |
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