ES301500A1 - Mejoras introducidas en la fabricacion de obleas, aisladoras y semiconductoras. - Google Patents

Mejoras introducidas en la fabricacion de obleas, aisladoras y semiconductoras.

Info

Publication number
ES301500A1
ES301500A1 ES0301500A ES301500A ES301500A1 ES 301500 A1 ES301500 A1 ES 301500A1 ES 0301500 A ES0301500 A ES 0301500A ES 301500 A ES301500 A ES 301500A ES 301500 A1 ES301500 A1 ES 301500A1
Authority
ES
Spain
Prior art keywords
insulators
semiconductors
translation
manufacture
machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0301500A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES301500A1 publication Critical patent/ES301500A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.

Landscapes

  • Laminated Bodies (AREA)
  • Formation Of Insulating Films (AREA)
ES0301500A 1963-06-28 1964-06-27 Mejoras introducidas en la fabricacion de obleas, aisladoras y semiconductoras. Expired ES301500A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US291338A US3300832A (en) 1963-06-28 1963-06-28 Method of making composite insulatorsemiconductor wafer

Publications (1)

Publication Number Publication Date
ES301500A1 true ES301500A1 (es) 1965-01-16

Family

ID=23119901

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0301500A Expired ES301500A1 (es) 1963-06-28 1964-06-27 Mejoras introducidas en la fabricacion de obleas, aisladoras y semiconductoras.

Country Status (2)

Country Link
US (1) US3300832A (es)
ES (1) ES301500A1 (es)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3797102A (en) * 1964-04-30 1974-03-19 Motorola Inc Method of making semiconductor devices
DE1439706B2 (de) * 1964-07-29 1975-04-10 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zur Herstellung einer mikrominiaturisierten Schaltungsanordnung
DE1286511B (de) * 1964-12-19 1969-01-09 Telefunken Patent Verfahren zum Herstellen eines Halbleiterkoerpers mit einem niederohmigen Substrat
US3793712A (en) * 1965-02-26 1974-02-26 Texas Instruments Inc Method of forming circuit components within a substrate
NL131898C (es) * 1965-03-26
US3423255A (en) * 1965-03-31 1969-01-21 Westinghouse Electric Corp Semiconductor integrated circuits and method of making the same
US3411200A (en) * 1965-04-14 1968-11-19 Westinghouse Electric Corp Fabrication of semiconductor integrated circuits
US3421205A (en) * 1965-04-14 1969-01-14 Westinghouse Electric Corp Fabrication of structures for semiconductor integrated circuits
US3412462A (en) * 1965-05-06 1968-11-26 Navy Usa Method of making hermetically sealed thin film module
DE1514460A1 (de) * 1965-05-11 1969-05-22 Siemens Ag Verfahren zum Herstellen von Halbleiterschaltungen
US3430335A (en) * 1965-06-08 1969-03-04 Hughes Aircraft Co Method of treating semiconductor devices or components
US3457123A (en) * 1965-06-28 1969-07-22 Motorola Inc Methods for making semiconductor structures having glass insulated islands
US3442011A (en) * 1965-06-30 1969-05-06 Texas Instruments Inc Method for isolating individual devices in an integrated circuit monolithic bar
FR1486855A (es) * 1965-07-17 1967-10-05
US3433686A (en) * 1966-01-06 1969-03-18 Ibm Process of bonding chips in a substrate recess by epitaxial growth of the bonding material
US3381369A (en) * 1966-02-17 1968-05-07 Rca Corp Method of electrically isolating semiconductor circuit components
US3444619A (en) * 1966-05-16 1969-05-20 Robert B Lomerson Method of assembling leads in an apertured support
US3571919A (en) * 1968-09-25 1971-03-23 Texas Instruments Inc Semiconductor device fabrication
US3881244A (en) * 1972-06-02 1975-05-06 Texas Instruments Inc Method of making a solid state inductor
US4169000A (en) * 1976-09-02 1979-09-25 International Business Machines Corporation Method of forming an integrated circuit structure with fully-enclosed air isolation
EP0011418A1 (en) * 1978-11-20 1980-05-28 THE GENERAL ELECTRIC COMPANY, p.l.c. Manufacture of electroluminescent display devices
US4335501A (en) * 1979-10-31 1982-06-22 The General Electric Company Limited Manufacture of monolithic LED arrays for electroluminescent display devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2948051A (en) * 1952-09-20 1960-08-09 Eisler Paul Method of manufacturing an electrically conductive winding pattern
US2958120A (en) * 1956-05-01 1960-11-01 Ibm Method of flush circuit manufacture
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
US2967344A (en) * 1958-02-14 1961-01-10 Rca Corp Semiconductor devices
GB945747A (es) * 1959-02-06 Texas Instruments Inc
US3168687A (en) * 1959-12-22 1965-02-02 Hughes Aircraft Co Packaged semiconductor assemblies having exposed electrodes
US3142783A (en) * 1959-12-22 1964-07-28 Hughes Aircraft Co Electrical circuit system
NL268758A (es) * 1960-09-20
US3229348A (en) * 1961-02-24 1966-01-18 Hughes Aircraft Co Method of making semiconductor devices
BE630858A (es) * 1962-04-10 1900-01-01

Also Published As

Publication number Publication date
US3300832A (en) 1967-01-31

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