ES324967A1 - Diode-tunel memory cell (Machine-translation by Google Translate, not legally binding) - Google Patents

Diode-tunel memory cell (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES324967A1
ES324967A1 ES0324967A ES324967A ES324967A1 ES 324967 A1 ES324967 A1 ES 324967A1 ES 0324967 A ES0324967 A ES 0324967A ES 324967 A ES324967 A ES 324967A ES 324967 A1 ES324967 A1 ES 324967A1
Authority
ES
Spain
Prior art keywords
diode
translation
machine
memory cell
legally binding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0324967A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of ES324967A1 publication Critical patent/ES324967A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

Diode-tunnel memory cell, specially constructed so that it constitutes with a series of cells equal to it a counting ring, characterized by the fact that the diode-tunnel whose anode is in the mass and the polarized cathode so that said diode has two stable states is attached, on the one hand, to a coaxial inverter input cable of this cell, while, on the other hand, is linked to the cathode of an accumulation effect diode connected to the output of the cell, as well as the cathode of a needle system diode that is part of the excitation circuit. (Machine-translation by Google Translate, not legally binding)
ES0324967A 1965-04-02 1966-03-31 Diode-tunel memory cell (Machine-translation by Google Translate, not legally binding) Expired ES324967A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR11797A FR1441559A (en) 1965-04-02 1965-04-02 Tunnel diode memory cell

Publications (1)

Publication Number Publication Date
ES324967A1 true ES324967A1 (en) 1967-04-01

Family

ID=8575570

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0324967A Expired ES324967A1 (en) 1965-04-02 1966-03-31 Diode-tunel memory cell (Machine-translation by Google Translate, not legally binding)

Country Status (8)

Country Link
BE (1) BE678565A (en)
CH (1) CH454226A (en)
DE (1) DE1499612B1 (en)
ES (1) ES324967A1 (en)
FR (1) FR1441559A (en)
GB (1) GB1081570A (en)
LU (1) LU50810A1 (en)
NL (1) NL6604315A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB953549A (en) * 1960-08-10 1964-03-25 Ass Elect Ind Improvements relating to binary matrix stores

Also Published As

Publication number Publication date
CH454226A (en) 1968-04-15
FR1441559A (en) 1966-06-10
GB1081570A (en) 1967-08-31
NL6604315A (en) 1966-10-03
BE678565A (en) 1966-09-01
DE1499612B1 (en) 1970-11-12
LU50810A1 (en) 1966-06-01

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