ES330913A2 - Solid state current control device for an electrical load circuit. (Machine-translation by Google Translate, not legally binding) - Google Patents

Abstract

Improvements introduced in the object of the main patent No. 302,450 by solid state current control device for an electric charge circuit, characterized in that the improved device comprises a (semiconductor) semiconductor material (of mechanism type) and electrodes in contact not rectifier with that to connect them in series in said electric circuit, said (semiconductor) semiconductor material being of a non-rectifying conductivity type, said semiconductor (medium) material including means for providing a first relatively high resistance condition for substantially blocking the current to through it between the electrodes substantially uniformly in each direction, said semiconductor material (medium) including means that respond to a voltage of a threshold value in at least one or the other direction or, alternatively, in both directions, applied to said electrodes to alter the first condition citad a relatively high resistance of said semiconductor (medium) material, to provide substantially instantaneously at least one path through said semiconductor material (medium) between the electrodes having a second condition of relatively low resistance to conduct current through of those between the electrodes, substantially equal in each direction, said semiconducting (middle) material including means for maintaining at least said pathway of said semiconductor (medium) material in its second mentioned condition of relatively low strength and providing a substantially constant ratio of voltage change by current change to conduct current at a substantially constant voltage across that between the electrodes, whose voltage is the same, to increase and decrease the current above a minimum value of current holding, and providing a drop d The voltage across said path at least in its second mentioned conductive condition of relatively low resistance, which is a smaller fraction of the voltage drop through said semiconductor (medium) material in said first condition of resistance blocking. relatively high near the aforementioned threshold voltage value, said semiconductor material (medium) further comprising means responsive to a decrease in current, through said pathway at least in its second referred conductive condition of relatively low resistance, to a value below said minimum current retention value to immediately cause a realignment of the second mentioned conductive condition of relatively low resistance of said path at least to the first relatively high resistance blocking condition. (Machine-translation by Google Translate, not legally binding)