ES349367A1 - A SEMICONDUCTIVE DEVICE AND A CIRCUIT ARRANGEMENT THAT INCORPORATES IT. - Google Patents

A SEMICONDUCTIVE DEVICE AND A CIRCUIT ARRANGEMENT THAT INCORPORATES IT.

Info

Publication number
ES349367A1
ES349367A1 ES349367A ES349367A ES349367A1 ES 349367 A1 ES349367 A1 ES 349367A1 ES 349367 A ES349367 A ES 349367A ES 349367 A ES349367 A ES 349367A ES 349367 A1 ES349367 A1 ES 349367A1
Authority
ES
Spain
Prior art keywords
zone
highly doped
diffused
junction
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES349367A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES349367A1 publication Critical patent/ES349367A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

A semi-conductor device such as an integrated circuit comprises a semi-conductor body having a portion 1 of one conductivity type and one or more islands 2 of the opposite type adjoining one surface of the body and forming electrically separating PN junctions 3 with the portion, at least one semi-conductor circuit element (e.g. transistor, diode, resistor, capacitor or multi-layer structure) incorporating a zone 5 of the one conductivity type being formed in at least one island and the breakdown voltage of the junction 3 being lower than the breakdown voltage between the zone 5 and the island. The breakdown voltage of the junction 3 is determined by a local, more highly doped, zone of the portion 1, preferably in the form of a separation channel 7, and a local, more highly doped, buried zone 8 of the island, the more highly doped zones being separated by, and defining part of, the PN junction 3 and the impurity concentration characteristic of the one conductivity type in the zone 7 having a maximum adjacent the part of the junction defined by the zones 7 and 8. In one method of making the device, arsenic is vapour-deposited on one surface of a silicon wafer 1 and diffused into the wafer in an oxygen atmosphere to form the highly doped zone 8 and an oxide layer (9, Figs. 3-7, not shown). A channel (10) enclosing the island 2 is etched in the oxide layer, the exposed silicon is etched to a depth of a few tenths of a micron, and boron is vapour-deposited to form a highly doped region (11) which is then diffused through the zone 8 to reach the portion 1. This is possible because boron diffuses about ten times as fast as arsenic. The oxide layer is then removed, an epitaxial layer 4 is grown on the surface, and a further oxide layer 12 is formed on the layer 4 and provided with a channel (13) immediately above the region (11). Boron is vapour deposited in the channel (13) and diffused into the layer 4 to meet the region (11) to form the highly doped separating channel 7, and simultaneously with this diffusion, or subsequently, boron is diffused through a suitable opening in the oxide layer to form the base zone 5 of a transistor. Phosphorus is then diffused-in to form the emitter zone 6 and collector contact zone 28 and finally aluminium is deposited to form contacts 18-20. The circuit is connected to voltage sources V 1 , V 2 in such a way that the voltage difference V 1 between the portion 1 and the base zone 5 is smaller than the difference between the breakdown voltages defined above. When the voltage V 2 is increased the junction 3 breaks down before the breakdown voltage between the base zone 5 and the collector zone 4 is reached so that damage to the transistor is prevented.
ES349367A 1967-01-18 1968-01-16 A SEMICONDUCTIVE DEVICE AND A CIRCUIT ARRANGEMENT THAT INCORPORATES IT. Expired ES349367A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6700755A NL6700755A (en) 1967-01-18 1967-01-18

Publications (1)

Publication Number Publication Date
ES349367A1 true ES349367A1 (en) 1969-09-16

Family

ID=19799016

Family Applications (1)

Application Number Title Priority Date Filing Date
ES349367A Expired ES349367A1 (en) 1967-01-18 1968-01-16 A SEMICONDUCTIVE DEVICE AND A CIRCUIT ARRANGEMENT THAT INCORPORATES IT.

Country Status (11)

Country Link
AT (1) AT300037B (en)
BE (1) BE709451A (en)
CH (1) CH470764A (en)
DE (1) DE1639342B2 (en)
DK (1) DK119667B (en)
ES (1) ES349367A1 (en)
FR (1) FR1562929A (en)
GB (1) GB1218603A (en)
NL (1) NL6700755A (en)
NO (1) NO124401B (en)
SE (1) SE345555B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2174540B (en) * 1985-05-02 1989-02-15 Texas Instruments Ltd Intergrated circuits
KR0171128B1 (en) * 1995-04-21 1999-02-01 김우중 Vertical Bipolar Transistors

Also Published As

Publication number Publication date
AT300037B (en) 1972-07-10
DE1639342A1 (en) 1971-02-04
CH470764A (en) 1969-03-31
NO124401B (en) 1972-04-10
NL6700755A (en) 1968-07-19
DE1639342B2 (en) 1977-06-02
BE709451A (en) 1968-07-16
SE345555B (en) 1972-05-29
DK119667B (en) 1971-02-08
GB1218603A (en) 1971-01-06
FR1562929A (en) 1969-04-11

Similar Documents

Publication Publication Date Title
GB1270697A (en) Methods of forming semiconductor devices
US3999213A (en) Semiconductor device and method of manufacturing the device
GB1330790A (en) Semiconductor devices
US3449643A (en) Semiconductor integrated circuit device
US3538399A (en) Pn junction gated field effect transistor having buried layer of low resistivity
GB953917A (en) Improvements relating to semiconductor circuits
US3532945A (en) Semiconductor devices having a low capacitance junction
GB1301345A (en)
GB1046152A (en) Diode structure in semiconductor integrated circuit and method of making same
GB1226899A (en)
GB1146943A (en) Semiconductor device
GB1231493A (en)
US3667006A (en) Semiconductor device having a lateral transistor
GB1012123A (en) Improvements in or relating to semiconductor devices
US3595713A (en) Method of manufacturing a semiconductor device comprising complementary transistors
GB1364676A (en) Semiconductor integrated device
US3677838A (en) Method of manufacturing a zener diode
GB1234985A (en) Improvements in and relating to methods of manufacturing semiconductor devices
US4902633A (en) Process for making a bipolar integrated circuit
US4005453A (en) Semiconductor device with isolated circuit elements and method of making
US3868722A (en) Semiconductor device having at least two transistors and method of manufacturing same
US4724221A (en) High-speed, low-power-dissipation integrated circuits
US3818583A (en) Method for fabricating semiconductor structure having complementary devices
US4443808A (en) Semiconductor device
ES349367A1 (en) A SEMICONDUCTIVE DEVICE AND A CIRCUIT ARRANGEMENT THAT INCORPORATES IT.