ES351788A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES351788A1
ES351788A1 ES351788A ES351788A ES351788A1 ES 351788 A1 ES351788 A1 ES 351788A1 ES 351788 A ES351788 A ES 351788A ES 351788 A ES351788 A ES 351788A ES 351788 A1 ES351788 A1 ES 351788A1
Authority
ES
Spain
Prior art keywords
polycrystalline
semi
conductor
layer
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES351788A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES351788A1 publication Critical patent/ES351788A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
ES351788A 1967-03-22 1968-03-20 Un dispositivo semiconductor. Expired ES351788A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US62506167A 1967-03-22 1967-03-22

Publications (1)

Publication Number Publication Date
ES351788A1 true ES351788A1 (es) 1969-06-16

Family

ID=24504411

Family Applications (1)

Application Number Title Priority Date Filing Date
ES351788A Expired ES351788A1 (es) 1967-03-22 1968-03-20 Un dispositivo semiconductor.

Country Status (7)

Country Link
US (1) US3443175A (es)
BR (1) BR6897822D0 (es)
DE (1) DE1764023C3 (es)
ES (1) ES351788A1 (es)
FR (1) FR1557424A (es)
GB (1) GB1152156A (es)
SE (1) SE346419B (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624467A (en) * 1969-02-17 1971-11-30 Texas Instruments Inc Monolithic integrated-circuit structure and method of fabrication
US3667008A (en) * 1970-10-29 1972-05-30 Rca Corp Semiconductor device employing two-metal contact and polycrystalline isolation means
US3837935A (en) * 1971-05-28 1974-09-24 Fujitsu Ltd Semiconductor devices and method of manufacturing the same
US3740620A (en) * 1971-06-22 1973-06-19 Ibm Storage system having heterojunction-homojunction devices
GB1447675A (en) * 1973-11-23 1976-08-25 Mullard Ltd Semiconductor devices
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
JPS5132957B1 (es) * 1975-04-30 1976-09-16
JPS53108776A (en) * 1977-03-04 1978-09-21 Nec Corp Semiconductor device
DE4309898B4 (de) * 1992-03-30 2005-11-03 Rohm Co. Ltd. Verfahren zur Herstellung eines Bipolartransistors mit einer Polysiliziumschicht zwischen einem Halbleiterbereich und einem Oberflächenelektrodenmetall

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL202404A (es) * 1955-02-18
US3017520A (en) * 1960-07-01 1962-01-16 Honeywell Regulator Co Integral transistor-thermistor and circuit using same for compensating for changing transistor temperature
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device
DE1188207B (de) * 1962-08-27 1965-03-04 Intermetall Verfahren zum Herstellen eines plattenfoermigen Koerpers von hoher elektrischer Leitfaehigkeit
US3200490A (en) * 1962-12-07 1965-08-17 Philco Corp Method of forming ohmic bonds to a germanium-coated silicon body with eutectic alloyforming materials
US3370980A (en) * 1963-08-19 1968-02-27 Litton Systems Inc Method for orienting single crystal films on polycrystalline substrates
US3335038A (en) * 1964-03-30 1967-08-08 Ibm Methods of producing single crystals on polycrystalline substrates and devices using same

Also Published As

Publication number Publication date
BR6897822D0 (pt) 1973-01-11
GB1152156A (en) 1969-05-14
FR1557424A (es) 1969-02-14
DE1764023A1 (de) 1972-03-30
US3443175A (en) 1969-05-06
SE346419B (es) 1972-07-03
DE1764023B2 (de) 1978-02-09
DE1764023C3 (de) 1981-07-23

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