ES363184A1 - Method for the manufacture of monolithic semiconductor devices. (Machine-translation by Google Translate, not legally binding) - Google Patents

Method for the manufacture of monolithic semiconductor devices. (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES363184A1
ES363184A1 ES363184A ES363184A ES363184A1 ES 363184 A1 ES363184 A1 ES 363184A1 ES 363184 A ES363184 A ES 363184A ES 363184 A ES363184 A ES 363184A ES 363184 A1 ES363184 A1 ES 363184A1
Authority
ES
Spain
Prior art keywords
type
conductivity
translation
manufacture
machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES363184A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES363184A1 publication Critical patent/ES363184A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/051—Manufacture or treatment of isolation region based on field-effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/50—Isolation regions based on field-effect

Landscapes

  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Method for the manufacture of monolithic semiconductor devices, of the type comprising the formation of a pattern of covered areas of a second type of conductivity adjacent to the surface of a monocrystalline semiconductor body of a first type of conductivity; the formation of a thin epitaxial layer of the second type of conductivity on the surface of the body; and the formation of a pattern of deep contact zones of the second type of conductivity in the epitaxial layer, each zone disposed in opposite position to at least a part of one of the covered areas, characterized by diffusing impurities of the first type of conductivity in the entire surface of the epitaxial layer to form base zones of the first type of conductivity, the lateral amplitude of the base areas being defined by the zones of deep contact. (Machine-translation by Google Translate, not legally binding)
ES363184A 1968-02-05 1969-01-23 Method for the manufacture of monolithic semiconductor devices. (Machine-translation by Google Translate, not legally binding) Expired ES363184A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70316568A 1968-02-05 1968-02-05

Publications (1)

Publication Number Publication Date
ES363184A1 true ES363184A1 (en) 1970-11-16

Family

ID=24824294

Family Applications (1)

Application Number Title Priority Date Filing Date
ES363184A Expired ES363184A1 (en) 1968-02-05 1969-01-23 Method for the manufacture of monolithic semiconductor devices. (Machine-translation by Google Translate, not legally binding)

Country Status (7)

Country Link
BE (1) BE726353A (en)
CH (1) CH502000A (en)
DE (1) DE1904503B2 (en)
ES (1) ES363184A1 (en)
FR (1) FR1600658A (en)
IL (1) IL31355A (en)
NL (1) NL6901819A (en)

Also Published As

Publication number Publication date
DE1904503B2 (en) 1971-06-03
FR1600658A (en) 1970-07-27
IL31355A0 (en) 1969-02-27
IL31355A (en) 1971-11-29
CH502000A (en) 1971-01-15
DE1904503A1 (en) 1969-11-27
BE726353A (en) 1969-05-29
NL6901819A (en) 1969-08-07

Similar Documents

Publication Publication Date Title
ES326632A1 (en) A SEMICONDUCTOR DEVICE.
ES414113A1 (en) A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE.
GB1159937A (en) Improvements in or relating to Semiconductor Devices.
ES393035A1 (en) A SEMICONDUCTOR DEVICE.
SE7714902L (en) POWER TRANSISTOR
IT995781B (en) SEMICONDUCTOR DEVICES
ES329618A1 (en) A METHOD OF MANUFACTURING A TRANSISTOR.
JPS5269589A (en) Semiconductor capacity element
ES438593A1 (en) Semiconductor device having complementary transistors and method of manufacturing same
ES363184A1 (en) Method for the manufacture of monolithic semiconductor devices. (Machine-translation by Google Translate, not legally binding)
ES402164A1 (en) A METHOD FOR MANUFACTURING SEMICONDUCTOR MONOLITHIC DEVICES.
GB1535656A (en) Planar semiconductor device
GB1531811A (en) Complementary transistors and their manufacture
JPS5413275A (en) Controlled rectifying element of semiconductor
FR2319197A1 (en) INJECTION LOGIC INTEGRATED CIRCUIT
SE7502781L (en)
FR2335054A1 (en) SEMICONDUCTOR DEVICE WITH A FLAT MULTI-LAYER STRUCTURE, AND METHOD FOR MANUFACTURING THIS DEVICE
ES375285A1 (en) A semiconductor device (Machine-translation by Google Translate, not legally binding)
SE7706615L (en) SEMICONDUCTOR
FR2303383A1 (en) FLAT FIELD EFFECT TRANSISTOR
ES393036A1 (en) Compact semiconductor device for monolithic integrated circuits
ES393039A2 (en) A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE.
FR2257999A1 (en) Integrated cct with low collector resistance transistor - has layer zone in semiconductor substrate both provided with layer zone of opposite conductivity
JPS52154390A (en) Semiconductor device
GB1031449A (en) Improvements in or relating to semiconductor elements