ES374318A1 - Un metodo de fabricar un dispositivo semiconductor sensiblea la presion. - Google Patents

Un metodo de fabricar un dispositivo semiconductor sensiblea la presion.

Info

Publication number
ES374318A1
ES374318A1 ES374318A ES374318A ES374318A1 ES 374318 A1 ES374318 A1 ES 374318A1 ES 374318 A ES374318 A ES 374318A ES 374318 A ES374318 A ES 374318A ES 374318 A1 ES374318 A1 ES 374318A1
Authority
ES
Spain
Prior art keywords
semiconductor device
making
pressure sensitive
sensitive semiconductor
stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES374318A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of ES374318A1 publication Critical patent/ES374318A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
ES374318A 1968-12-10 1969-12-06 Un metodo de fabricar un dispositivo semiconductor sensiblea la presion. Expired ES374318A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9217368 1968-12-10
JP43668 1968-12-27

Publications (1)

Publication Number Publication Date
ES374318A1 true ES374318A1 (es) 1972-03-16

Family

ID=26333417

Family Applications (1)

Application Number Title Priority Date Filing Date
ES374318A Expired ES374318A1 (es) 1968-12-10 1969-12-06 Un metodo de fabricar un dispositivo semiconductor sensiblea la presion.

Country Status (10)

Country Link
US (1) US3634931A (es)
AT (1) AT294961B (es)
BE (1) BE742874A (es)
CH (1) CH516872A (es)
DE (1) DE1961492B2 (es)
ES (1) ES374318A1 (es)
FR (1) FR2025792B1 (es)
GB (1) GB1268406A (es)
NL (1) NL157457B (es)
SE (1) SE360772B (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2013220A1 (de) * 1970-03-19 1971-11-25 Siemens Ag Verfahren zum Herstellen einer Transistor anordnung aus Silicium
JPS5520388B1 (es) * 1970-08-12 1980-06-02
US4054893A (en) * 1975-12-29 1977-10-18 Hutson Jearld L Semiconductor switching devices utilizing nonohmic current paths across P-N junctions
JPS5837713B2 (ja) * 1978-12-01 1983-08-18 富士通株式会社 半導体レ−ザ−装置の製造方法
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ
EP0695927A3 (en) * 1994-08-01 1996-06-26 Motorola Inc Transducer-detector using a Schottky junction and having a high voltage signal at the output
JP4772135B2 (ja) * 2008-06-09 2011-09-14 ルネサスエレクトロニクス株式会社 半導体素子、および、その製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL224458A (es) * 1956-05-15
US3248616A (en) * 1962-03-08 1966-04-26 Westinghouse Electric Corp Monolithic bistable flip-flop
GB985380A (en) * 1963-02-26 1965-03-10 Westinghouse Electric Corp Semiconductor devices
US3261989A (en) * 1964-01-17 1966-07-19 Int Rectifier Corp Four-layer semiconductor device strain switch
DE1277374B (de) * 1964-09-30 1968-09-12 Hitachi Ltd Mechanisch-elektrischer Wandler
US3523038A (en) * 1965-06-02 1970-08-04 Texas Instruments Inc Process for making ohmic contact to planar germanium semiconductor devices
FR1547292A (fr) * 1966-12-19 1968-11-22 Gen Electric Perfectionnements aux dispositifs à semiconducteur

Also Published As

Publication number Publication date
SE360772B (es) 1973-10-01
GB1268406A (en) 1972-03-29
CH516872A (de) 1971-12-15
NL6918487A (es) 1970-06-12
NL157457B (nl) 1978-07-17
US3634931A (en) 1972-01-18
BE742874A (es) 1970-05-14
FR2025792A1 (es) 1970-09-11
AT294961B (de) 1971-11-15
FR2025792B1 (es) 1975-01-10
DE1961492A1 (de) 1970-07-30
DE1961492B2 (de) 1972-04-13

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