ES389468A1 - Procedimiento para la preparacion de monocristales filamen-tosos de carburo de silicio. - Google Patents

Procedimiento para la preparacion de monocristales filamen-tosos de carburo de silicio.

Info

Publication number: ES389468A1
Authority: ES; Spain
Prior art keywords: monocrystals; silicon; silicon carbide; production; filamentous
Prior art date: 1970-06-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

ES389468A

Other languages

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Lonza AG

Original Assignee

Lonza AG

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1970-06-05

Filing date

1971-03-23

Publication date

1973-06-01

1971-03-23 Application filed by Lonza AG filed Critical Lonza AG

1973-06-01 Publication of ES389468A1 publication Critical patent/ES389468A1/es

Status Expired legal-status Critical Current

Links

238000000034 method Methods 0.000 title abstract 2
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
229910052710 silicon Inorganic materials 0.000 abstract 3
239000010703 silicon Substances 0.000 abstract 3
239000000843 powder Substances 0.000 abstract 2
239000000758 substrate Substances 0.000 abstract 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
229910052799 carbon Inorganic materials 0.000 abstract 1
239000007789 gas Substances 0.000 abstract 1
239000007792 gaseous phase Substances 0.000 abstract 1
229910052736 halogen Inorganic materials 0.000 abstract 1
150000002367 halogens Chemical class 0.000 abstract 1
229910010271 silicon carbide Inorganic materials 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors

Landscapes

Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

ES389468A 1970-06-05 1971-03-23 Procedimiento para la preparacion de monocristales filamen-tosos de carburo de silicio. Expired ES389468A1 (es)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CH842470A CH526336A (de)	1970-06-05	1970-06-05	Verfahren zur Herstellung von Whiskers

Publications (1)

Publication Number	Publication Date
ES389468A1 true ES389468A1 (es)	1973-06-01

Family

ID=4340121

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
ES389468A Expired ES389468A1 (es)	1970-06-05	1971-03-23	Procedimiento para la preparacion de monocristales filamen-tosos de carburo de silicio.

Country Status (11)

Country	Link
AT (1)	AT318542B (es)
BE (1)	BE767711A (es)
BR (1)	BR7102227D0 (es)
CH (1)	CH526336A (es)
DE (1)	DE2127473A1 (es)
ES (1)	ES389468A1 (es)
FR (1)	FR2097792A5 (es)
GB (1)	GB1284688A (es)
NL (1)	NL7107194A (es)
SE (1)	SE376896B (es)
SU (1)	SU401042A3 (es)

1970
- 1970-06-05 CH CH842470A patent/CH526336A/de not_active IP Right Cessation
1971
- 1971-03-11 AT AT209971A patent/AT318542B/de not_active IP Right Cessation
- 1971-03-23 ES ES389468A patent/ES389468A1/es not_active Expired
- 1971-04-15 BR BR222771A patent/BR7102227D0/pt unknown
- 1971-04-22 GB GB5953770A patent/GB1284688A/en not_active Expired
- 1971-05-19 SU SU1661466A patent/SU401042A3/ru active
- 1971-05-21 FR FR7118485A patent/FR2097792A5/fr not_active Expired
- 1971-05-25 NL NL7107194A patent/NL7107194A/xx unknown
- 1971-05-26 BE BE767711A patent/BE767711A/xx unknown
- 1971-06-03 DE DE19712127473 patent/DE2127473A1/de active Pending
- 1971-06-04 SE SE729471A patent/SE376896B/xx unknown

Also Published As

Publication number	Publication date
NL7107194A (es)	1971-12-07
DE2127473A1 (de)	1971-12-09
BR7102227D0 (pt)	1973-04-10
SE376896B (es)	1975-06-16
FR2097792A5 (es)	1972-03-03
SU401042A3 (es)	1973-10-01
BE767711A (fr)	1971-11-26
GB1284688A (en)	1972-08-09
CH526336A (de)	1972-08-15
AT318542B (de)	1974-10-25

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