ES394706A1 - Perfeccionamientos introducidos en disposiciones de semi- conductores con varios transistores de efecto de campo de capa de aislamiento integrados en un substrato semiconductorcomun. - Google Patents

Perfeccionamientos introducidos en disposiciones de semi- conductores con varios transistores de efecto de campo de capa de aislamiento integrados en un substrato semiconductorcomun.

Info

Publication number
ES394706A1
ES394706A1 ES394706A ES394706A ES394706A1 ES 394706 A1 ES394706 A1 ES 394706A1 ES 394706 A ES394706 A ES 394706A ES 394706 A ES394706 A ES 394706A ES 394706 A1 ES394706 A1 ES 394706A1
Authority
ES
Spain
Prior art keywords
semiconductor substrate
insulation layer
zones
covers
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES394706A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES394706A1 publication Critical patent/ES394706A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
ES394706A 1970-09-02 1971-09-01 Perfeccionamientos introducidos en disposiciones de semi- conductores con varios transistores de efecto de campo de capa de aislamiento integrados en un substrato semiconductorcomun. Expired ES394706A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702043405 DE2043405A1 (de) 1970-09-02 1970-09-02 Halbleiteranordnung mit monolithisch integrierten Isolierschicht-Feldeffekttransistoren

Publications (1)

Publication Number Publication Date
ES394706A1 true ES394706A1 (es) 1975-11-01

Family

ID=5781308

Family Applications (1)

Application Number Title Priority Date Filing Date
ES394706A Expired ES394706A1 (es) 1970-09-02 1971-09-01 Perfeccionamientos introducidos en disposiciones de semi- conductores con varios transistores de efecto de campo de capa de aislamiento integrados en un substrato semiconductorcomun.

Country Status (8)

Country Link
AU (1) AU3180371A (fr)
BE (1) BE770898A (fr)
CH (1) CH534431A (fr)
DE (1) DE2043405A1 (fr)
ES (1) ES394706A1 (fr)
FR (1) FR2105176B1 (fr)
GB (1) GB1353366A (fr)
NL (1) NL7112058A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2572851B1 (fr) * 1984-11-08 1987-07-31 Matra Harris Semiconducteurs Reseau prediffuse a cellules de base interconnectables

Also Published As

Publication number Publication date
FR2105176A1 (fr) 1972-04-28
BE770898A (fr) 1971-12-16
AU3180371A (en) 1973-02-01
FR2105176B1 (fr) 1974-10-31
CH534431A (de) 1973-02-28
NL7112058A (fr) 1972-03-06
GB1353366A (en) 1974-05-15
DE2043405A1 (de) 1972-03-16

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