ES401687A1 - A SEMICONDUCTOR DEVICE. - Google Patents

A SEMICONDUCTOR DEVICE.

Info

Publication number
ES401687A1
ES401687A1 ES401687A ES401687A ES401687A1 ES 401687 A1 ES401687 A1 ES 401687A1 ES 401687 A ES401687 A ES 401687A ES 401687 A ES401687 A ES 401687A ES 401687 A1 ES401687 A1 ES 401687A1
Authority
ES
Spain
Prior art keywords
region
layer
semiconductor
conductivity
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES401687A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES401687A1 publication Critical patent/ES401687A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

Landscapes

  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

A semiconductor device comprising a semiconductor body having a region of a first type of conductivity, a semiconductor layer present on said region and contiguous to the body surface, at least a first buried layer of the second type of conductivity present locally between said layer semiconductor and the region of the first type of conductivity, and a path of an insulating material embedded at least partially in the semiconductor layer, a region of the semiconductor layer being separated from the region of the first type of conductivity and the remaining part of the layer by the first buried layer and by a part of the layout contiguous to the first buried layer and which substantially surrounds said region, a semiconductor circuit element being arranged at least partially in said region of the semiconductor layer, characterized in that between the first buried layer and the semiconductor layer is a second a buried layer of the first type of conductivity and because the mentioned semiconductor layer region is divided, by a part of the embedded path of insulating material that is separated from the first buried layer by at least a part of the thickness of the second buried layer, at least in a first island-shaped region in which the semiconductor circuit element is arranged at least partially, and in a second island-shaped region of the first type of conductivity, the regions of which are both contiguous to the second buried layer . (Machine-translation by Google Translate, not legally binding)
ES401687A 1971-04-14 1972-04-12 A SEMICONDUCTOR DEVICE. Expired ES401687A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7105000A NL7105000A (en) 1971-04-14 1971-04-14

Publications (1)

Publication Number Publication Date
ES401687A1 true ES401687A1 (en) 1975-03-16

Family

ID=19812915

Family Applications (1)

Application Number Title Priority Date Filing Date
ES401687A Expired ES401687A1 (en) 1971-04-14 1972-04-12 A SEMICONDUCTOR DEVICE.

Country Status (11)

Country Link
AU (1) AU470407B2 (en)
BE (1) BE782012A (en)
BR (1) BR7202251D0 (en)
CH (1) CH539952A (en)
DE (1) DE2216642C3 (en)
ES (1) ES401687A1 (en)
FR (1) FR2133692B1 (en)
GB (1) GB1387021A (en)
IT (1) IT951314B (en)
NL (1) NL7105000A (en)
SE (1) SE383582B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161301C (en) * 1972-12-29 1980-01-15 Philips Nv SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURE THEREOF.
JPS5534619U (en) * 1978-08-25 1980-03-06

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE740938A (en) * 1967-12-05 1970-04-01

Also Published As

Publication number Publication date
SE383582B (en) 1976-03-15
DE2216642B2 (en) 1979-04-12
DE2216642A1 (en) 1972-10-19
BR7202251D0 (en) 1973-06-07
DE2216642C3 (en) 1979-12-13
CH539952A (en) 1973-07-31
NL7105000A (en) 1972-10-17
FR2133692A1 (en) 1972-12-01
AU470407B2 (en) 1973-10-18
GB1387021A (en) 1975-03-12
BE782012A (en) 1972-10-13
IT951314B (en) 1973-06-30
FR2133692B1 (en) 1977-08-19
AU4093672A (en) 1973-10-18

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