ES409621A1 - Procedimiento para la corrosion alcalina de sistemas semi- conductores. - Google Patents

Procedimiento para la corrosion alcalina de sistemas semi- conductores.

Info

Publication number
ES409621A1
ES409621A1 ES409621A ES409621A ES409621A1 ES 409621 A1 ES409621 A1 ES 409621A1 ES 409621 A ES409621 A ES 409621A ES 409621 A ES409621 A ES 409621A ES 409621 A1 ES409621 A1 ES 409621A1
Authority
ES
Spain
Prior art keywords
alkaline etching
semiconductor bodies
semiconductor systems
alkaline
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES409621A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of ES409621A1 publication Critical patent/ES409621A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Thyristors (AREA)

Abstract

Procedimiento para la corrosión alcalina de sistemas semiconductores provistos de pasos pn, preferentemente de silicio o germanio, caracterizado porque los sistemas semiconductores se exponen a la acción de una solución cáustica hirviente , saturada de carbonato potásico o carbonato sódico.
ES409621A 1972-03-23 1972-12-14 Procedimiento para la corrosion alcalina de sistemas semi- conductores. Expired ES409621A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2214197A DE2214197C3 (de) 1972-03-23 1972-03-23 Verfahren zum Ätzen von PN-Übergänge enthaltenden Halbleiterscheiben

Publications (1)

Publication Number Publication Date
ES409621A1 true ES409621A1 (es) 1975-12-01

Family

ID=5839938

Family Applications (1)

Application Number Title Priority Date Filing Date
ES409621A Expired ES409621A1 (es) 1972-03-23 1972-12-14 Procedimiento para la corrosion alcalina de sistemas semi- conductores.

Country Status (11)

Country Link
JP (1) JPS525230B2 (es)
AT (1) AT325678B (es)
BE (1) BE797244A (es)
CH (1) CH575175A5 (es)
DE (1) DE2214197C3 (es)
ES (1) ES409621A1 (es)
FR (1) FR2176664B1 (es)
GB (1) GB1362507A (es)
IT (1) IT972618B (es)
NL (1) NL7217673A (es)
SE (1) SE378478B (es)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB889872A (en) * 1957-04-24 1962-02-21 Sarkes Tarzian A method of treating a semi-conductor device
FR1266612A (fr) * 1960-06-02 1961-07-17 Solutions d'attaque chimiques pour le traitement en surface des matériaux semiconducteurs
NL271850A (es) * 1961-02-03
GB980513A (en) * 1961-11-17 1965-01-13 Licentia Gmbh Improvements relating to the use of silicon in semi-conductor devices
DE1621511A1 (de) * 1967-04-01 1970-07-23 Siemens Ag Verfahren zum Entspiegeln von Siliziumeinkristalloberflaechen

Also Published As

Publication number Publication date
DE2214197C3 (de) 1982-01-14
FR2176664A1 (es) 1973-11-02
SE378478B (es) 1975-09-01
DE2214197B2 (de) 1981-04-23
JPS4915371A (es) 1974-02-09
ATA1017072A (de) 1975-01-15
AT325678B (de) 1975-11-10
NL7217673A (es) 1973-09-25
IT972618B (it) 1974-05-31
FR2176664B1 (es) 1977-12-30
DE2214197A1 (de) 1973-09-27
CH575175A5 (es) 1976-04-30
BE797244A (fr) 1973-07-16
JPS525230B2 (es) 1977-02-10
GB1362507A (en) 1974-08-07

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