ES483560A0 - Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1 - Google Patents

Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1

Info

Publication number
ES483560A0
ES483560A0 ES483560A ES483560A ES483560A0 ES 483560 A0 ES483560 A0 ES 483560A0 ES 483560 A ES483560 A ES 483560A ES 483560 A ES483560 A ES 483560A ES 483560 A0 ES483560 A0 ES 483560A0
Authority
ES
Spain
Prior art keywords
procedure
contain
compound
forming
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES483560A
Other languages
English (en)
Other versions
ES8101329A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES8101329A1 publication Critical patent/ES8101329A1/es
Publication of ES483560A0 publication Critical patent/ES483560A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01358—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being a Group III-V material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap
ES483560A 1978-08-28 1979-08-22 Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1 Granted ES483560A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/937,318 US4216036A (en) 1978-08-28 1978-08-28 Self-terminating thermal oxidation of Al-containing group III-V compound layers

Publications (2)

Publication Number Publication Date
ES8101329A1 ES8101329A1 (es) 1980-12-16
ES483560A0 true ES483560A0 (es) 1980-12-16

Family

ID=25469771

Family Applications (1)

Application Number Title Priority Date Filing Date
ES483560A Granted ES483560A0 (es) 1978-08-28 1979-08-22 Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1

Country Status (7)

Country Link
US (1) US4216036A (es)
EP (1) EP0008898B1 (es)
JP (1) JPS6214094B2 (es)
CA (1) CA1121520A (es)
DE (1) DE2965439D1 (es)
ES (1) ES483560A0 (es)
WO (1) WO1980000521A1 (es)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5021365A (en) * 1986-06-16 1991-06-04 International Business Machines Corporation Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
EP0305144A3 (en) * 1987-08-24 1989-03-08 Canon Kabushiki Kaisha Method of forming crystalline compound semiconductor film
WO1991006976A2 (en) * 1989-11-07 1991-05-16 Department Of The Navy Process for producing an aluminum oxide layer on various substrates
US5098857A (en) * 1989-12-22 1992-03-24 International Business Machines Corp. Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy
US5262360A (en) * 1990-12-31 1993-11-16 The Board Of Trustees Of The University Of Illinois AlGaAs native oxide
US5400354A (en) * 1994-02-08 1995-03-21 Ludowise; Michael Laminated upper cladding structure for a light-emitting device
KR0148599B1 (ko) * 1994-11-15 1998-12-01 양승택 유전체 박막상의 무결함 화합물 반도체 박막의 제조방법
US5719891A (en) * 1995-12-18 1998-02-17 Picolight Incorporated Conductive element with lateral oxidation barrier
DE19640005A1 (de) * 1996-09-27 1998-04-02 Siemens Ag Halbleitervorrichtung und Verfahren zu dessen Herstellung
US5872031A (en) * 1996-11-27 1999-02-16 The Regents Of The University Of California Enhancement-depletion logic based on gaas mosfets
US5978408A (en) * 1997-02-07 1999-11-02 Xerox Corporation Highly compact vertical cavity surface emitting lasers
US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
US6297538B1 (en) 1998-03-23 2001-10-02 The University Of Delaware Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate
US6599564B1 (en) 2000-08-09 2003-07-29 The Board Of Trustees Of The University Of Illinois Substrate independent distributed bragg reflector and formation method
US11437504B2 (en) 2017-09-29 2022-09-06 Intel Corporation Complementary group III-nitride transistors with complementary polarization junctions
WO2019066921A1 (en) 2017-09-29 2019-04-04 Intel Corporation GROUP III NITRIDE ELECTROLUMINESCENT DEVICES COMPRISING POLARIZATION JUNCTION
US11355652B2 (en) 2017-09-29 2022-06-07 Intel Corporation Group III-nitride polarization junction diodes
WO2019066914A1 (en) 2017-09-29 2019-04-04 Intel Corporation III-N TRANSISTORS WITH TUNNEL POLARIZATION JUNCTION

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890169A (en) * 1973-03-26 1975-06-17 Bell Telephone Labor Inc Method of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealing
US3914465A (en) * 1972-09-25 1975-10-21 Bell Telephone Labor Inc Surface passivation of GaAs junction laser devices
FR2217068B1 (es) * 1973-02-13 1978-10-20 Labo Electronique Physique
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
JPS50159288A (es) * 1974-06-11 1975-12-23
US3928092A (en) * 1974-08-28 1975-12-23 Bell Telephone Labor Inc Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices
US4070205A (en) * 1976-12-08 1978-01-24 The United States Of America As Represented By The Secretary Of The Air Force Aluminum arsenide eutectic gallium arsenide solar cell
JPS53105177A (en) * 1977-02-24 1978-09-13 Toshiba Corp Manufacture of semiconductor device
US4144634A (en) * 1977-06-28 1979-03-20 Bell Telephone Laboratories, Incorporated Fabrication of gallium arsenide MOS devices

Also Published As

Publication number Publication date
JPS55500604A (es) 1980-09-04
US4216036A (en) 1980-08-05
WO1980000521A1 (en) 1980-03-20
JPS6214094B2 (es) 1987-03-31
EP0008898B1 (en) 1983-05-18
ES8101329A1 (es) 1980-12-16
DE2965439D1 (en) 1983-07-07
CA1121520A (en) 1982-04-06
EP0008898A1 (en) 1980-03-19

Similar Documents

Publication Publication Date Title
MX155893A (es) Metodo mejorado para aplicar un revestimiento antirreflejante sobre silicio
MX154316A (es) Una composicion en polvo para depositacion sobre un substrato metalico
AR223971A1 (es) Procedimiento para preparar un oxido de olefina
ES487488A0 (es) Procedimiento para preparar una composicion oral que com- prende un compuesto de 2-penem
ES532105A0 (es) Un procedimiento mejorado para curar un revestimiento sobre un sustrato.
ES497777A0 (es) Procedimiento para la formacion de un laminado de capas mul-tiples
IT1203257B (it) Dispositivo per la fabbricazione di cartone ondulato rivestito su almeno una faccia
ES496394A0 (es) Un procedimiento para la preparacion de una composicion de recubrimiento de una resina de silicona.
ES517489A0 (es) Un procedimiento mejorado para preparar un revestimiento transparente que lleva oxido de silicio.
ES490941A0 (es) Un procedimiento para la preparacion de una composicion acuosa de recubrimiento.
ES525454A0 (es) Procedimiento para la produccion de un recubrimiento mediante la aplicacion de una sustancia de recubrimiento sobre un sustrato.
ES499046A0 (es) Un procedimiento para clonar una secuencia de desoxinucleo- tidos
MX150398A (es) Procedimiento para la preparacion de un compuesto tensoactivo de resina natural
MX5604E (es) Procedimiento para preparar aril-hidantoina
ES490774A0 (es) Un metodo de preparar un revestimiento de oxido sobre un sustrato.
BR7600567A (pt) Aperfeicoamento em processo para a formacao de uma camada anticorrosiva de oxido sobre os acos
ES494645A0 (es) Procedimiento de fabricacion de una composicion de recubrimiento de laca para superficies electroconductoras.
ES490694A0 (es) Un procedimiento para aplicar una capa adherente de una composicion de revestimento, que contiene pgimentos, sobre un sustrato.
ES508088A0 (es) Procedimiento para formar una capa de oxido de fosforo-silicato-cristail sobre la superficie de un sustrato de silicio.
IT7825477A0 (it) Procedimento per la preparazione di film poliolefinici termosaldabili.
ES487728A0 (es) Un procedimiento para depositar una capa de cinc brillante sobre un sustrato.
ES528572A0 (es) Procedimiento para formar un revestimiento seco sobre un sustrato
ES490693A0 (es) Un procedimiento para aplicar una capa adherente de una composicion de revestimiento, que contiene pigmentos, sobre un substrato.
IT1122123B (it) Avvolgimento di trasformatore,realizzato quale avvolgimento a strati,e procedimento per fabbricare un tale avvolgimento a strati
IT1089631B (it) Procedimento per la preparazione di glicoli vicinali