ES483560A0 - Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1 - Google Patents
Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1Info
- Publication number
- ES483560A0 ES483560A0 ES483560A ES483560A ES483560A0 ES 483560 A0 ES483560 A0 ES 483560A0 ES 483560 A ES483560 A ES 483560A ES 483560 A ES483560 A ES 483560A ES 483560 A0 ES483560 A0 ES 483560A0
- Authority
- ES
- Spain
- Prior art keywords
- procedure
- contain
- compound
- forming
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
- H10D64/01358—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being a Group III-V material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/936—Graded energy gap
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/937,318 US4216036A (en) | 1978-08-28 | 1978-08-28 | Self-terminating thermal oxidation of Al-containing group III-V compound layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES8101329A1 ES8101329A1 (es) | 1980-12-16 |
| ES483560A0 true ES483560A0 (es) | 1980-12-16 |
Family
ID=25469771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES483560A Granted ES483560A0 (es) | 1978-08-28 | 1979-08-22 | Procedimiento para formar una capa de oxido sobre una super-ficie principal de un cuerpo de un compuesto de los grupos iii-v que no contienen a1 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4216036A (es) |
| EP (1) | EP0008898B1 (es) |
| JP (1) | JPS6214094B2 (es) |
| CA (1) | CA1121520A (es) |
| DE (1) | DE2965439D1 (es) |
| ES (1) | ES483560A0 (es) |
| WO (1) | WO1980000521A1 (es) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4843450A (en) * | 1986-06-16 | 1989-06-27 | International Business Machines Corporation | Compound semiconductor interface control |
| US5021365A (en) * | 1986-06-16 | 1991-06-04 | International Business Machines Corporation | Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning |
| EP0305144A3 (en) * | 1987-08-24 | 1989-03-08 | Canon Kabushiki Kaisha | Method of forming crystalline compound semiconductor film |
| WO1991006976A2 (en) * | 1989-11-07 | 1991-05-16 | Department Of The Navy | Process for producing an aluminum oxide layer on various substrates |
| US5098857A (en) * | 1989-12-22 | 1992-03-24 | International Business Machines Corp. | Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy |
| US5262360A (en) * | 1990-12-31 | 1993-11-16 | The Board Of Trustees Of The University Of Illinois | AlGaAs native oxide |
| US5400354A (en) * | 1994-02-08 | 1995-03-21 | Ludowise; Michael | Laminated upper cladding structure for a light-emitting device |
| KR0148599B1 (ko) * | 1994-11-15 | 1998-12-01 | 양승택 | 유전체 박막상의 무결함 화합물 반도체 박막의 제조방법 |
| US5719891A (en) * | 1995-12-18 | 1998-02-17 | Picolight Incorporated | Conductive element with lateral oxidation barrier |
| DE19640005A1 (de) * | 1996-09-27 | 1998-04-02 | Siemens Ag | Halbleitervorrichtung und Verfahren zu dessen Herstellung |
| US5872031A (en) * | 1996-11-27 | 1999-02-16 | The Regents Of The University Of California | Enhancement-depletion logic based on gaas mosfets |
| US5978408A (en) * | 1997-02-07 | 1999-11-02 | Xerox Corporation | Highly compact vertical cavity surface emitting lasers |
| US6304588B1 (en) * | 1997-02-07 | 2001-10-16 | Xerox Corporation | Method and structure for eliminating polarization instability in laterally-oxidized VCSELs |
| US6297538B1 (en) | 1998-03-23 | 2001-10-02 | The University Of Delaware | Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate |
| US6599564B1 (en) | 2000-08-09 | 2003-07-29 | The Board Of Trustees Of The University Of Illinois | Substrate independent distributed bragg reflector and formation method |
| US11437504B2 (en) | 2017-09-29 | 2022-09-06 | Intel Corporation | Complementary group III-nitride transistors with complementary polarization junctions |
| WO2019066921A1 (en) | 2017-09-29 | 2019-04-04 | Intel Corporation | GROUP III NITRIDE ELECTROLUMINESCENT DEVICES COMPRISING POLARIZATION JUNCTION |
| US11355652B2 (en) | 2017-09-29 | 2022-06-07 | Intel Corporation | Group III-nitride polarization junction diodes |
| WO2019066914A1 (en) | 2017-09-29 | 2019-04-04 | Intel Corporation | III-N TRANSISTORS WITH TUNNEL POLARIZATION JUNCTION |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3890169A (en) * | 1973-03-26 | 1975-06-17 | Bell Telephone Labor Inc | Method of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealing |
| US3914465A (en) * | 1972-09-25 | 1975-10-21 | Bell Telephone Labor Inc | Surface passivation of GaAs junction laser devices |
| FR2217068B1 (es) * | 1973-02-13 | 1978-10-20 | Labo Electronique Physique | |
| US3974002A (en) * | 1974-06-10 | 1976-08-10 | Bell Telephone Laboratories, Incorporated | MBE growth: gettering contaminants and fabricating heterostructure junction lasers |
| JPS50159288A (es) * | 1974-06-11 | 1975-12-23 | ||
| US3928092A (en) * | 1974-08-28 | 1975-12-23 | Bell Telephone Labor Inc | Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices |
| US4070205A (en) * | 1976-12-08 | 1978-01-24 | The United States Of America As Represented By The Secretary Of The Air Force | Aluminum arsenide eutectic gallium arsenide solar cell |
| JPS53105177A (en) * | 1977-02-24 | 1978-09-13 | Toshiba Corp | Manufacture of semiconductor device |
| US4144634A (en) * | 1977-06-28 | 1979-03-20 | Bell Telephone Laboratories, Incorporated | Fabrication of gallium arsenide MOS devices |
-
1978
- 1978-08-28 US US05/937,318 patent/US4216036A/en not_active Expired - Lifetime
-
1979
- 1979-07-31 CA CA000332873A patent/CA1121520A/en not_active Expired
- 1979-08-17 DE DE7979301680T patent/DE2965439D1/de not_active Expired
- 1979-08-17 EP EP79301680A patent/EP0008898B1/en not_active Expired
- 1979-08-21 JP JP54501461A patent/JPS6214094B2/ja not_active Expired
- 1979-08-21 WO PCT/US1979/000631 patent/WO1980000521A1/en not_active Ceased
- 1979-08-22 ES ES483560A patent/ES483560A0/es active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55500604A (es) | 1980-09-04 |
| US4216036A (en) | 1980-08-05 |
| WO1980000521A1 (en) | 1980-03-20 |
| JPS6214094B2 (es) | 1987-03-31 |
| EP0008898B1 (en) | 1983-05-18 |
| ES8101329A1 (es) | 1980-12-16 |
| DE2965439D1 (en) | 1983-07-07 |
| CA1121520A (en) | 1982-04-06 |
| EP0008898A1 (en) | 1980-03-19 |
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