|
US4750806A
(en)
*
|
1985-06-17 |
1988-06-14 |
Alcatel Usa Corporation |
Glass fibers and capillaries with high temperature resistant coatings
|
|
GB2150858B
(en)
*
|
1983-12-06 |
1986-11-26 |
Standard Telephones Cables Ltd |
Optical fibres
|
|
GB2155024A
(en)
*
|
1984-03-03 |
1985-09-18 |
Standard Telephones Cables Ltd |
Surface treatment of plastics materials
|
|
CA1278193C
(en)
*
|
1985-07-05 |
1990-12-27 |
Brian G. Bagley |
Method for preparation of silicate glasses of controlled index ofrefraction and optical device including same
|
|
JP2588388B2
(ja)
*
|
1986-08-08 |
1997-03-05 |
株式会社 半導体エネルギー研究所 |
被膜作製方法
|
|
US4743662A
(en)
*
|
1986-11-03 |
1988-05-10 |
Dow Corning Corporation |
Infusible preceramic polymers via plasma treatment
|
|
US4764394A
(en)
*
|
1987-01-20 |
1988-08-16 |
Wisconsin Alumni Research Foundation |
Method and apparatus for plasma source ion implantation
|
|
US4985112A
(en)
*
|
1987-02-09 |
1991-01-15 |
International Business Machines Corporation |
Enhanced plasma etching
|
|
US5110409A
(en)
*
|
1987-02-09 |
1992-05-05 |
Ibm |
Enhanced plasma etching
|
|
US4842941A
(en)
*
|
1987-04-06 |
1989-06-27 |
General Electric Company |
Method for forming abrasion-resistant polycarbonate articles, and articles of manufacture produced thereby
|
|
US4927704A
(en)
*
|
1987-08-24 |
1990-05-22 |
General Electric Company |
Abrasion-resistant plastic articles and method for making them
|
|
US5051308A
(en)
*
|
1987-08-24 |
1991-09-24 |
General Electric Company |
Abrasion-resistant plastic articles
|
|
US4964694A
(en)
*
|
1988-07-26 |
1990-10-23 |
Fujikura Ltd. |
Optical fiber and apparatus for producing same
|
|
DE3926592A1
(de)
*
|
1989-08-11 |
1991-02-14 |
Rheydt Kabelwerk Ag |
Optische faser
|
|
US5141595A
(en)
*
|
1990-03-05 |
1992-08-25 |
Northrop Corporation |
Method and apparatus for carbon coating and boron-doped carbon coating
|
|
US5109442A
(en)
*
|
1990-03-28 |
1992-04-28 |
Fiberchem Inc. |
Waterproof optical fiber chemical sensor and method of making same
|
|
US5254372A
(en)
*
|
1991-02-27 |
1993-10-19 |
Nichols Technologies, Inc. |
Method and apparatus for plasma treatment of a filament
|
|
US5389195A
(en)
*
|
1991-03-07 |
1995-02-14 |
Minnesota Mining And Manufacturing Company |
Surface modification by accelerated plasma or ions
|
|
FR2681472B1
(fr)
|
1991-09-18 |
1993-10-29 |
Commissariat Energie Atomique |
Procede de fabrication de films minces de materiau semiconducteur.
|
|
US5521351A
(en)
*
|
1994-08-30 |
1996-05-28 |
Wisconsin Alumni Research Foundation |
Method and apparatus for plasma surface treatment of the interior of hollow forms
|
|
US5683757A
(en)
*
|
1995-08-25 |
1997-11-04 |
Iskanderova; Zelina A. |
Surface modification of polymers and carbon-based materials by ion implantation and oxidative conversion
|
|
US6253704B1
(en)
|
1995-10-13 |
2001-07-03 |
Mattson Technology, Inc. |
Apparatus and method for pulsed plasma processing of a semiconductor substrate
|
|
US5983828A
(en)
*
|
1995-10-13 |
1999-11-16 |
Mattson Technology, Inc. |
Apparatus and method for pulsed plasma processing of a semiconductor substrate
|
|
US6794301B2
(en)
|
1995-10-13 |
2004-09-21 |
Mattson Technology, Inc. |
Pulsed plasma processing of semiconductor substrates
|
|
KR970064327A
(ko)
*
|
1996-02-27 |
1997-09-12 |
모리시다 요이치 |
고주파 전력 인가장치, 플라즈마 발생장치, 플라즈마 처리장치, 고주파 전력 인가방법, 플라즈마 발생방법 및 플라즈마 처리방법
|
|
FR2748851B1
(fr)
*
|
1996-05-15 |
1998-08-07 |
Commissariat Energie Atomique |
Procede de realisation d'une couche mince de materiau semiconducteur
|
|
FR2753540B1
(fr)
*
|
1996-09-13 |
1998-11-13 |
Alcatel Cable |
Conducteur optique et son procede de fabrication
|
|
US20070122997A1
(en)
*
|
1998-02-19 |
2007-05-31 |
Silicon Genesis Corporation |
Controlled process and resulting device
|
|
US5994207A
(en)
|
1997-05-12 |
1999-11-30 |
Silicon Genesis Corporation |
Controlled cleavage process using pressurized fluid
|
|
US6291313B1
(en)
|
1997-05-12 |
2001-09-18 |
Silicon Genesis Corporation |
Method and device for controlled cleaving process
|
|
US6033974A
(en)
|
1997-05-12 |
2000-03-07 |
Silicon Genesis Corporation |
Method for controlled cleaving process
|
|
US6027988A
(en)
*
|
1997-05-28 |
2000-02-22 |
The Regents Of The University Of California |
Method of separating films from bulk substrates by plasma immersion ion implantation
|
|
US6548382B1
(en)
*
|
1997-07-18 |
2003-04-15 |
Silicon Genesis Corporation |
Gettering technique for wafers made using a controlled cleaving process
|
|
FR2773261B1
(fr)
*
|
1997-12-30 |
2000-01-28 |
Commissariat Energie Atomique |
Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
|
|
US6291326B1
(en)
|
1998-06-23 |
2001-09-18 |
Silicon Genesis Corporation |
Pre-semiconductor process implant and post-process film separation
|
|
DE19847774C2
(de)
*
|
1998-10-16 |
2002-10-17 |
Peter Foernsel |
Vorrichtung zur Plasmabehandlung von stab- oder fadenförmigem Material
|
|
US6500732B1
(en)
|
1999-08-10 |
2002-12-31 |
Silicon Genesis Corporation |
Cleaving process to fabricate multilayered substrates using low implantation doses
|
|
US6263941B1
(en)
|
1999-08-10 |
2001-07-24 |
Silicon Genesis Corporation |
Nozzle for cleaving substrates
|
|
US6221740B1
(en)
|
1999-08-10 |
2001-04-24 |
Silicon Genesis Corporation |
Substrate cleaving tool and method
|
|
EP1212787B1
(en)
*
|
1999-08-10 |
2014-10-08 |
Silicon Genesis Corporation |
A cleaving process to fabricate multilayered substrates using low implantation doses
|
|
US6536958B2
(en)
*
|
2000-12-20 |
2003-03-25 |
Triquint Technology Holding Co. |
Optical device package with hermetically bonded fibers
|
|
FR2823599B1
(fr)
|
2001-04-13 |
2004-12-17 |
Commissariat Energie Atomique |
Substrat demomtable a tenue mecanique controlee et procede de realisation
|
|
US8187377B2
(en)
*
|
2002-10-04 |
2012-05-29 |
Silicon Genesis Corporation |
Non-contact etch annealing of strained layers
|
|
FR2848336B1
(fr)
*
|
2002-12-09 |
2005-10-28 |
Commissariat Energie Atomique |
Procede de realisation d'une structure contrainte destinee a etre dissociee
|
|
FR2856844B1
(fr)
*
|
2003-06-24 |
2006-02-17 |
Commissariat Energie Atomique |
Circuit integre sur puce de hautes performances
|
|
FR2857953B1
(fr)
|
2003-07-21 |
2006-01-13 |
Commissariat Energie Atomique |
Structure empilee, et procede pour la fabriquer
|
|
FR2861497B1
(fr)
*
|
2003-10-28 |
2006-02-10 |
Soitec Silicon On Insulator |
Procede de transfert catastrophique d'une couche fine apres co-implantation
|
|
US7354815B2
(en)
*
|
2003-11-18 |
2008-04-08 |
Silicon Genesis Corporation |
Method for fabricating semiconductor devices using strained silicon bearing material
|
|
FR2889887B1
(fr)
*
|
2005-08-16 |
2007-11-09 |
Commissariat Energie Atomique |
Procede de report d'une couche mince sur un support
|
|
FR2891281B1
(fr)
|
2005-09-28 |
2007-12-28 |
Commissariat Energie Atomique |
Procede de fabrication d'un element en couches minces.
|
|
US9362439B2
(en)
|
2008-05-07 |
2016-06-07 |
Silicon Genesis Corporation |
Layer transfer of films utilizing controlled shear region
|
|
US8293619B2
(en)
|
2008-08-28 |
2012-10-23 |
Silicon Genesis Corporation |
Layer transfer of films utilizing controlled propagation
|
|
US7811900B2
(en)
*
|
2006-09-08 |
2010-10-12 |
Silicon Genesis Corporation |
Method and structure for fabricating solar cells using a thick layer transfer process
|
|
US8993410B2
(en)
|
2006-09-08 |
2015-03-31 |
Silicon Genesis Corporation |
Substrate cleaving under controlled stress conditions
|
|
FR2910179B1
(fr)
*
|
2006-12-19 |
2009-03-13 |
Commissariat Energie Atomique |
PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
|
|
FR2922359B1
(fr)
*
|
2007-10-12 |
2009-12-18 |
Commissariat Energie Atomique |
Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
|
|
FR2925221B1
(fr)
*
|
2007-12-17 |
2010-02-19 |
Commissariat Energie Atomique |
Procede de transfert d'une couche mince
|
|
US8330126B2
(en)
*
|
2008-08-25 |
2012-12-11 |
Silicon Genesis Corporation |
Race track configuration and method for wafering silicon solar substrates
|
|
US8329557B2
(en)
*
|
2009-05-13 |
2012-12-11 |
Silicon Genesis Corporation |
Techniques for forming thin films by implantation with reduced channeling
|
|
FR2947098A1
(fr)
*
|
2009-06-18 |
2010-12-24 |
Commissariat Energie Atomique |
Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
|
|
US20120006468A1
(en)
*
|
2010-07-07 |
2012-01-12 |
Schlumberger Technology Corporation |
Inline plasma treatment of an optical fiber cable structure
|
|
US20120321776A1
(en)
*
|
2011-06-17 |
2012-12-20 |
Robert Vetrecin |
Process for in situ plasma polymerization of silicone coatings for surgical needles
|