ES537258A0 - Una instalacion para activar un potencial y luego eliminar las trayectorias de corriente de cortocircuito activadas y existentes a traves de un dispositivo fotovoltaico - Google Patents
Una instalacion para activar un potencial y luego eliminar las trayectorias de corriente de cortocircuito activadas y existentes a traves de un dispositivo fotovoltaicoInfo
- Publication number
- ES537258A0 ES537258A0 ES537258A ES537258A ES537258A0 ES 537258 A0 ES537258 A0 ES 537258A0 ES 537258 A ES537258 A ES 537258A ES 537258 A ES537258 A ES 537258A ES 537258 A0 ES537258 A0 ES 537258A0
- Authority
- ES
- Spain
- Prior art keywords
- activate
- facility
- potential
- photovoltaic device
- short current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000037361 pathway Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
- G01R31/52—Testing for short-circuits, leakage current or ground faults
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S136/00—Batteries: thermoelectric and photoelectric
- Y10S136/29—Testing, calibrating, treating, e.g. aging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/435,890 US4451970A (en) | 1982-10-21 | 1982-10-21 | System and method for eliminating short circuit current paths in photovoltaic devices |
| US06/520,054 US4464823A (en) | 1982-10-21 | 1983-08-03 | Method for eliminating short and latent short circuit current paths in photovoltaic devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES8602304A1 ES8602304A1 (es) | 1985-11-01 |
| ES537258A0 true ES537258A0 (es) | 1985-11-01 |
Family
ID=27030730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES537258A Granted ES537258A0 (es) | 1982-10-21 | 1984-10-31 | Una instalacion para activar un potencial y luego eliminar las trayectorias de corriente de cortocircuito activadas y existentes a traves de un dispositivo fotovoltaico |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4464823A (es) |
| CA (1) | CA1209234A (es) |
| ES (1) | ES537258A0 (es) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4543171A (en) * | 1984-03-22 | 1985-09-24 | Rca Corporation | Method for eliminating defects in a photodetector |
| KR900006772B1 (ko) * | 1985-11-06 | 1990-09-21 | 세미콘닥터 에너지 라보라토리 컴파니 리미티드 | 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법 |
| US4680616A (en) * | 1986-05-09 | 1987-07-14 | Chronar Corp. | Removal of defects from semiconductors |
| US4749454A (en) * | 1986-11-17 | 1988-06-07 | Solarex Corporation | Method of removing electrical shorts and shunts from a thin-film semiconductor device |
| US5320723A (en) * | 1990-05-07 | 1994-06-14 | Canon Kabushiki Kaisha | Method of removing short-circuit portion in photoelectric conversion device |
| JP2686022B2 (ja) * | 1992-07-01 | 1997-12-08 | キヤノン株式会社 | 光起電力素子の製造方法 |
| US7075002B1 (en) * | 1995-03-27 | 2006-07-11 | Semiconductor Energy Laboratory Company, Ltd. | Thin-film photoelectric conversion device and a method of manufacturing the same |
| US6228662B1 (en) | 1999-03-24 | 2001-05-08 | Kaneka Corporation | Method for removing short-circuited sections of a solar cell |
| AU766466B2 (en) * | 1999-05-14 | 2003-10-16 | Kaneka Corporation | Reverse biasing apparatus for solar battery module |
| NL1013204C2 (nl) | 1999-10-04 | 2001-04-05 | Stichting Energie | Inrichting voor het lokaliseren van productiefouten in een fotovolta´sch element. |
| US6423595B1 (en) | 2001-04-19 | 2002-07-23 | United Solar Systems Corporation | Method for scribing a semiconductor device |
| JP2006508253A (ja) * | 2002-11-27 | 2006-03-09 | ザ・ユニバーシティ・オブ・トレド | 液状電解物を有した集積型光電気化学とそのシステム |
| US7667133B2 (en) * | 2003-10-29 | 2010-02-23 | The University Of Toledo | Hybrid window layer for photovoltaic cells |
| WO2005101510A2 (en) * | 2004-04-16 | 2005-10-27 | The University Of Toledo | Light-assisted electrochemical shunt passivation for photovoltaic devices |
| WO2006110613A2 (en) * | 2005-04-11 | 2006-10-19 | The University Of Toledo | Integrated photovoltaic-electrolysis cell |
| JP2007189199A (ja) * | 2005-12-12 | 2007-07-26 | Tdk Corp | キャパシタおよびその製造方法 |
| WO2009073501A2 (en) * | 2007-11-30 | 2009-06-11 | University Of Toledo | System for diagnosis and treatment of photovoltaic and other semiconductor devices |
| US7989729B1 (en) | 2008-03-11 | 2011-08-02 | Kla-Tencor Corporation | Detecting and repairing defects of photovoltaic devices |
| US7733111B1 (en) | 2008-03-11 | 2010-06-08 | Kla-Tencor Corporation | Segmented optical and electrical testing for photovoltaic devices |
| US8574944B2 (en) * | 2008-03-28 | 2013-11-05 | The University Of Toledo | System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby |
| CN101809761B (zh) | 2008-09-09 | 2011-12-28 | 三洋电机株式会社 | 太阳能电池组件的制造方法 |
| JP5173020B2 (ja) * | 2009-04-15 | 2013-03-27 | シャープ株式会社 | 太陽電池パネル検査装置、太陽電池パネル検査方法および太陽電池パネルの製造方法 |
| WO2013072988A1 (ja) * | 2011-11-14 | 2013-05-23 | 株式会社日本マイクロニクス | シート状電池のリペア装置 |
| JP6049556B2 (ja) | 2013-07-01 | 2016-12-21 | 株式会社東芝 | 太陽電池、太陽電池モジュール及び太陽電池の製造方法 |
| US9564270B2 (en) | 2013-12-27 | 2017-02-07 | Tdk Corporation | Thin film capacitor |
| JP6446877B2 (ja) | 2014-07-16 | 2019-01-09 | Tdk株式会社 | 薄膜キャパシタ |
| JP6365216B2 (ja) | 2014-10-15 | 2018-08-01 | Tdk株式会社 | 薄膜キャパシタ |
| JP6641872B2 (ja) | 2015-10-15 | 2020-02-05 | Tdk株式会社 | 電子デバイスシート |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4301409A (en) * | 1978-06-06 | 1981-11-17 | California Institute Of Technology | Solar cell anomaly detection method and apparatus |
| US4166918A (en) * | 1978-07-19 | 1979-09-04 | Rca Corporation | Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell |
| JPS5669872A (en) * | 1979-11-13 | 1981-06-11 | Fuji Electric Co Ltd | Manufacture of solar cell |
| JPS5946426B2 (ja) * | 1979-11-13 | 1984-11-12 | 富士電機株式会社 | 太陽電池の製造方法 |
| JPS5756941A (en) * | 1980-09-24 | 1982-04-05 | Nippon Telegr & Teleph Corp <Ntt> | Evaluation method for defect of thin insulating film |
| US4385971A (en) * | 1981-06-26 | 1983-05-31 | Rca Corporation | Electrolytic etch for eliminating shorts and shunts in large area amorphous silicon solar cells |
| US4420497A (en) * | 1981-08-24 | 1983-12-13 | Fairchild Camera And Instrument Corporation | Method of detecting and repairing latent defects in a semiconductor dielectric layer |
| US4419530A (en) * | 1982-02-11 | 1983-12-06 | Energy Conversion Devices, Inc. | Solar cell and method for producing same |
-
1983
- 1983-08-03 US US06/520,054 patent/US4464823A/en not_active Expired - Lifetime
- 1983-10-18 CA CA000439225A patent/CA1209234A/en not_active Expired
-
1984
- 1984-10-31 ES ES537258A patent/ES537258A0/es active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4464823A (en) | 1984-08-14 |
| ES8602304A1 (es) | 1985-11-01 |
| CA1209234A (en) | 1986-08-05 |
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