ES543020A0 - Un metodo de fabricar un dispositivo semiconductor - Google Patents

Un metodo de fabricar un dispositivo semiconductor

Info

Publication number
ES543020A0
ES543020A0 ES543020A ES543020A ES543020A0 ES 543020 A0 ES543020 A0 ES 543020A0 ES 543020 A ES543020 A ES 543020A ES 543020 A ES543020 A ES 543020A ES 543020 A0 ES543020 A0 ES 543020A0
Authority
ES
Spain
Prior art keywords
manufacturing
semiconductive device
semiconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES543020A
Other languages
English (en)
Other versions
ES8607623A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES543020A0 publication Critical patent/ES543020A0/es
Publication of ES8607623A1 publication Critical patent/ES8607623A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
ES543020A 1984-05-14 1985-05-10 Un metodo de fabricar un dispositivo semiconductor Expired ES8607623A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08412275A GB2158843A (en) 1984-05-14 1984-05-14 Method of manufacturing a semiconductor device by molecular beam epitaxy

Publications (2)

Publication Number Publication Date
ES543020A0 true ES543020A0 (es) 1986-05-16
ES8607623A1 ES8607623A1 (es) 1986-05-16

Family

ID=10560932

Family Applications (1)

Application Number Title Priority Date Filing Date
ES543020A Expired ES8607623A1 (es) 1984-05-14 1985-05-10 Un metodo de fabricar un dispositivo semiconductor

Country Status (7)

Country Link
US (1) US4640720A (es)
EP (1) EP0168071B1 (es)
JP (1) JPS60245125A (es)
CA (1) CA1255192A (es)
DE (1) DE3562102D1 (es)
ES (1) ES8607623A1 (es)
GB (1) GB2158843A (es)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727861B2 (ja) * 1987-03-27 1995-03-29 富士通株式会社 ▲ｉｉｉ▼−▲ｖ▼族化合物半導体結晶の成長方法
GB2211209A (en) * 1987-10-16 1989-06-28 Philips Electronic Associated A method of forming a defect mixed oxide
GB8726639D0 (en) * 1987-11-13 1987-12-16 Vg Instr Groups Ltd Vacuum evaporation & deposition
US5025751A (en) * 1988-02-08 1991-06-25 Hitachi, Ltd. Solid film growth apparatus
JPH02235327A (ja) * 1989-03-08 1990-09-18 Fujitsu Ltd 半導体成長装置および半導体成長方法
US5525156A (en) * 1989-11-24 1996-06-11 Research Development Corporation Apparatus for epitaxially growing a chemical compound crystal
IT1240199B (it) * 1990-04-19 1993-11-27 Cselt Centro Studi Lab Telecom Effusore di vapori per impianti di deposizione epitassiale.
JPH05114768A (ja) * 1991-04-12 1993-05-07 Texas Instr Inc <Ti> 超格子の形成方法
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JP2792423B2 (ja) * 1994-01-14 1998-09-03 日本電気株式会社 結晶成長方法およびその装置
US5616180A (en) * 1994-12-22 1997-04-01 Northrop Grumman Corporation Aparatus for varying the flux of a molecular beam
JP4442558B2 (ja) * 2005-01-06 2010-03-31 三星モバイルディスプレイ株式會社 蒸発源の加熱制御方法，蒸発源の冷却制御方法および蒸発源の制御方法
CN117098654B (zh) * 2021-03-24 2026-03-17 松下知识产权经营株式会社 层叠体、电子器件以及层叠体的制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL269855A (es) * 1960-10-04
US3303067A (en) * 1963-12-26 1967-02-07 Ibm Method of fabricating thin film transistor devices
US3531335A (en) * 1966-05-09 1970-09-29 Kewanee Oil Co Method of preparing films of controlled resistivity
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
FR2370320A1 (fr) * 1976-11-05 1978-06-02 Thomson Csf Systeme de regulation de flux moleculaires, et son application aux techniques de co-evaporation
JPS54696A (en) * 1977-06-03 1979-01-06 Showa Denko Kk Method and apparatus for measuring gas volume contained in gassadsorbing and desorbingg material
US4159919A (en) * 1978-01-16 1979-07-03 Bell Telephone Laboratories, Incorporated Molecular beam epitaxy using premixing
US4426569A (en) * 1982-07-13 1984-01-17 The Perkin-Elmer Corporation Temperature sensor assembly

Also Published As

Publication number Publication date
DE3562102D1 (en) 1988-05-11
EP0168071B1 (en) 1988-04-06
GB2158843A (en) 1985-11-20
EP0168071A1 (en) 1986-01-15
JPS60245125A (ja) 1985-12-04
ES8607623A1 (es) 1986-05-16
GB8412275D0 (en) 1984-06-20
US4640720A (en) 1987-02-03
CA1255192A (en) 1989-06-06

Similar Documents

Publication Publication Date Title
KR860002862A (ko) 반도체장치의 제조방법
KR860009481A (ko) 반도체장치의 제조방법
KR850006258A (ko) 반도체장치 제조방법
DE3271995D1 (en) Method of manufacturing a semiconductor device
KR920003832A (ko) 반도체 장치 제조 방법
KR890012373A (ko) 반도체장치의 제조방법
KR880006786A (ko) 반도체장치의 제조방법
ES553580A0 (es) Un dispositivo semiconductor
KR900012335A (ko) 반도체장치의 제조방법
KR850008057A (ko) Misfet로 구성되는 반도체 장치의 제조방법
KR900008660A (ko) 반도체장치의 제조방법
KR860005437A (ko) 반도체장치의 제조방법
DE3684539D1 (de) Herstellungsverfahren einer halbleitervorrichtung.
KR860007741A (ko) 반도체 기억장치의 제조방법
KR860000710A (ko) 반도체장치 제조방법
KR860006832A (ko) 반도체장치의 제조방법
KR890015368A (ko) 반도체장치 제조방법
KR880008418A (ko) 반도체장치의 제조방법
KR870000758A (ko) 반도체장치의 제조방법
EP0187421A3 (en) Method of manufacturing a semiconductor device
KR900012342A (ko) 반도체장치의 제조방법
KR900012331A (ko) 반도체장치의 제조방법
KR870003568A (ko) 반도체기억장치의 제조방법
KR900013613A (ko) 반도체장치의 제조방법
KR900013619A (ko) 반도체장치의 제조방법