ES8105482A1 - Conjunto de detectores de radiacion de estado solido - Google Patents

Conjunto de detectores de radiacion de estado solido

Info

Publication number
ES8105482A1
ES8105482A1 ES494233A ES494233A ES8105482A1 ES 8105482 A1 ES8105482 A1 ES 8105482A1 ES 494233 A ES494233 A ES 494233A ES 494233 A ES494233 A ES 494233A ES 8105482 A1 ES8105482 A1 ES 8105482A1
Authority
ES
Spain
Prior art keywords
layer
solid state
electrodes
radiation detectors
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES494233A
Other languages
English (en)
Other versions
ES494233A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of ES8105482A1 publication Critical patent/ES8105482A1/es
Publication of ES494233A0 publication Critical patent/ES494233A0/es
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

CONJUNTO DE DETECTORES DE RAYOS X DEL TIPO DE ESTADO SOLIDO. COMPRENDE UN SUSTRATO AISLANTE Y UNA PLURALIDAD DE ELECTRODOS FORMADOS SOBRE DICHO SUSTRATO. UNA CAPA DE MATERIAL FOTOCONDUCTOR CUBRE A LOS ELECTRODOS Y LA SUPERFICIE DEL SUSTRATO, PRESENTANDO LA CITADA CAPA UN CAMBIO DE CONDUCTANCIA ELECTRICA ENTRE UNA PRIMERA SUPERFICIE DE DICHA CAPA MAS PROXIMA A LOS ELECTRODOS Y UNA SUPERFICIE OPUESTA A LA CAPA DE MATERIAL, QUE ES FUNCION DE LA ABSORCION DE LOS QUANTAS DE RADIACION INCIDENTE EN DICHA CAPA. UNA PELICULA DE SULFURO DE CINC, DE UN ESPESOR DE 1.000 ARMSTRONGS, QUEDA INTERPUESTA ENTRE LA PRIMERA SUPERFICIE DE LA CAPA DE MATERIAL FOTOCONDUCTOR Y EL CONJUNTO DE ELECTRODOS. U
ES494233A 1978-12-14 1980-08-13 Conjunto de detectores de radiacion de estado solido Granted ES494233A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/969,545 US4233514A (en) 1978-12-14 1978-12-14 Solid state radiation detector and arrays thereof

Publications (2)

Publication Number Publication Date
ES8105482A1 true ES8105482A1 (es) 1981-05-16
ES494233A0 ES494233A0 (es) 1981-05-16

Family

ID=25515670

Family Applications (2)

Application Number Title Priority Date Filing Date
ES486947A Granted ES486947A0 (es) 1978-12-14 1979-12-14 Detector de radiaciones de estado solido
ES494233A Granted ES494233A0 (es) 1978-12-14 1980-08-13 Conjunto de detectores de radiacion de estado solido

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES486947A Granted ES486947A0 (es) 1978-12-14 1979-12-14 Detector de radiaciones de estado solido

Country Status (6)

Country Link
US (1) US4233514A (es)
JP (1) JPS55104776A (es)
DE (1) DE2949862A1 (es)
ES (2) ES486947A0 (es)
FR (1) FR2444341B1 (es)
GB (1) GB2037077B (es)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5670673A (en) * 1979-11-14 1981-06-12 Hitachi Ltd Photoelectric converter
US4363969A (en) * 1980-07-16 1982-12-14 Ong Poen S Light switched segmented tomography detector
JPS58117478A (ja) * 1982-01-05 1983-07-13 Fuji Xerox Co Ltd 放射線ｃｔスキャナ装置用放射線センサアレイ
JPS58182572A (ja) * 1982-04-20 1983-10-25 Toshiba Corp 二次元放射線検出器
JPS6243586A (ja) * 1985-08-21 1987-02-25 Nippon Mining Co Ltd 放射線検出器
FR2601499B1 (fr) * 1986-07-08 1988-09-30 Thomson Csf Detecteur d'image a photoconducteur a memoire
FR2605167B1 (fr) * 1986-10-10 1989-03-31 Thomson Csf Capteur d'images electrostatique
WO1989003593A1 (en) * 1987-10-15 1989-04-20 Stemcor Corporation Low noise photodetection and photodetector therefor
DE4227096A1 (de) * 1992-08-17 1994-02-24 Philips Patentverwaltung Röntgenbilddetektor
EP0791230B1 (en) * 1995-09-12 2008-08-13 Koninklijke Philips Electronics N.V. X-ray image sensor
JP3805100B2 (ja) * 1997-04-10 2006-08-02 キヤノン株式会社 光電変換装置
JP4059463B2 (ja) 1998-12-10 2008-03-12 株式会社島津製作所 放射線検出装置
JP3832615B2 (ja) * 1999-08-26 2006-10-11 株式会社島津製作所 放射線検出装置
US7132666B2 (en) * 2001-02-07 2006-11-07 Tomoji Takamasa Radiation detector and radiation detecting element
US7138290B2 (en) * 2004-12-03 2006-11-21 Micron Technology, Inc. Methods of depositing silver onto a metal selenide-comprising surface and methods of depositing silver onto a selenium-comprising surface
US7507512B2 (en) * 2005-11-29 2009-03-24 General Electric Company Particle-in-binder X-ray sensitive coating using polyimide binder
WO2013082721A1 (en) 2011-12-09 2013-06-13 Karim Karim S Radiation detector system and method of manufacture
EP3322342B1 (en) 2015-07-14 2023-11-22 DOSE Smart Imaging Apparatus for radiation detection in a digital imaging system
US9698193B1 (en) 2016-09-15 2017-07-04 Ka Imaging Inc. Multi-sensor pixel architecture for use in a digital imaging system
CN110132326B (zh) * 2019-05-16 2021-08-17 京东方科技集团股份有限公司 Msm型探测器及其偏置电压调整方法和装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2706792A (en) * 1951-05-25 1955-04-19 Gen Electric X-ray detection
US2706791A (en) * 1951-06-18 1955-04-19 Gen Electric Semi-conductor
US3602721A (en) * 1967-11-20 1971-08-31 Malsushita Electric Ind Co Ltd Photoelectric device with enhanced photoconductive sensitivity and storage effect of input radiation
BE758451A (fr) * 1969-11-07 1971-04-16 Siemens Ag Detecteur pour le comptage de particules nucleaires et de rayons x"
DE2107928A1 (en) * 1971-02-19 1972-10-05 Siemens Ag Radiation-sensitive resistance cell - contg selenium layer as sensitive element
DE2141934A1 (de) * 1971-08-20 1973-03-01 Siemens Ag Strahlenmessgeraet
DE2361635A1 (de) * 1973-12-11 1975-06-12 Eichinger Peter Halbleiter-gammastrahlungsdetektor
US4085327A (en) * 1977-01-14 1978-04-18 General Electric Company Direct charge readout electron radiography apparatus with improved signal-to-noise ratio
GB1559664A (en) * 1977-02-17 1980-01-23 Tokyo Shibaura Electric Co Semiconductor radiation detector

Also Published As

Publication number Publication date
ES8101782A1 (es) 1980-12-16
DE2949862A1 (de) 1980-07-03
JPS6257954B2 (es) 1987-12-03
FR2444341B1 (fr) 1985-10-04
JPS55104776A (en) 1980-08-11
FR2444341A1 (fr) 1980-07-11
ES486947A0 (es) 1980-12-16
GB2037077A (en) 1980-07-02
ES494233A0 (es) 1981-05-16
US4233514A (en) 1980-11-11
GB2037077B (en) 1983-04-13

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